Radiative transitions in highly doped and compensated chalcopyrites and kesterites: The case of Cu2ZnSnS4
Autor(a) principal: | |
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Data de Publicação: | 2014 |
Outros Autores: | , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/10400.22/12953 |
Resumo: | The theoretical models of radiative recombinations in both CuIn1−xGaxSe2 chalcopyrite and Cu2ZnSnS4 kesterite, and related compounds, were revised. For heavily doped materials, electrons are free or bound to large donor agglomerates which hinders the involvement of single donors in the radiative recombination channels. In this work, we investigated the temperature and excitation power dependencies of the photoluminescence of Cu2ZnSnS4-based solar cells in which the absorber layer was grown through sulphurization of multiperiod structuresofprecursorlayers.Forbothsamplestheluminescenceisdominatedbyanasymmetricbandwithpeak energy at∼1.22 eV, which is influenced by fluctuating potentials in both conduction and valence bands. A value of ∼60 meV was estimated for the root-mean-square depth of the tails in the conduction band. The radiative transitions involve the recombination of electrons captured by localized states in tails of the conduction band with holes localized in neighboring acceptors that follow the fluctuations in the valence band. The same acceptor level with an ionization energy of∼280 meV was identified in both absorber layers. The influence of fluctuating potentials in the electrical performance of the solar cells was discussed |
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Radiative transitions in highly doped and compensated chalcopyrites and kesterites: The case of Cu2ZnSnS4The theoretical models of radiative recombinations in both CuIn1−xGaxSe2 chalcopyrite and Cu2ZnSnS4 kesterite, and related compounds, were revised. For heavily doped materials, electrons are free or bound to large donor agglomerates which hinders the involvement of single donors in the radiative recombination channels. In this work, we investigated the temperature and excitation power dependencies of the photoluminescence of Cu2ZnSnS4-based solar cells in which the absorber layer was grown through sulphurization of multiperiod structuresofprecursorlayers.Forbothsamplestheluminescenceisdominatedbyanasymmetricbandwithpeak energy at∼1.22 eV, which is influenced by fluctuating potentials in both conduction and valence bands. A value of ∼60 meV was estimated for the root-mean-square depth of the tails in the conduction band. The radiative transitions involve the recombination of electrons captured by localized states in tails of the conduction band with holes localized in neighboring acceptors that follow the fluctuations in the valence band. The same acceptor level with an ionization energy of∼280 meV was identified in both absorber layers. The influence of fluctuating potentials in the electrical performance of the solar cells was discussedAmerican Physical SocietyRepositório Científico do Instituto Politécnico do PortoTeixeira, J. P.Sousa, R. A.Sousa, M. G.Cunha, A. F. daFernandes, P. A.Salomé, P. M. P.Leitão, J. P.20142119-01-01T00:00:00Z2014-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10400.22/12953eng10.1103/PhysRevB.90.235202metadata only accessinfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-03-13T12:54:57Zoai:recipp.ipp.pt:10400.22/12953Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T17:33:11.958355Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Radiative transitions in highly doped and compensated chalcopyrites and kesterites: The case of Cu2ZnSnS4 |
title |
Radiative transitions in highly doped and compensated chalcopyrites and kesterites: The case of Cu2ZnSnS4 |
spellingShingle |
Radiative transitions in highly doped and compensated chalcopyrites and kesterites: The case of Cu2ZnSnS4 Teixeira, J. P. |
title_short |
Radiative transitions in highly doped and compensated chalcopyrites and kesterites: The case of Cu2ZnSnS4 |
title_full |
Radiative transitions in highly doped and compensated chalcopyrites and kesterites: The case of Cu2ZnSnS4 |
title_fullStr |
Radiative transitions in highly doped and compensated chalcopyrites and kesterites: The case of Cu2ZnSnS4 |
title_full_unstemmed |
Radiative transitions in highly doped and compensated chalcopyrites and kesterites: The case of Cu2ZnSnS4 |
title_sort |
Radiative transitions in highly doped and compensated chalcopyrites and kesterites: The case of Cu2ZnSnS4 |
author |
Teixeira, J. P. |
author_facet |
Teixeira, J. P. Sousa, R. A. Sousa, M. G. Cunha, A. F. da Fernandes, P. A. Salomé, P. M. P. Leitão, J. P. |
author_role |
author |
author2 |
Sousa, R. A. Sousa, M. G. Cunha, A. F. da Fernandes, P. A. Salomé, P. M. P. Leitão, J. P. |
author2_role |
author author author author author author |
dc.contributor.none.fl_str_mv |
Repositório Científico do Instituto Politécnico do Porto |
dc.contributor.author.fl_str_mv |
Teixeira, J. P. Sousa, R. A. Sousa, M. G. Cunha, A. F. da Fernandes, P. A. Salomé, P. M. P. Leitão, J. P. |
description |
The theoretical models of radiative recombinations in both CuIn1−xGaxSe2 chalcopyrite and Cu2ZnSnS4 kesterite, and related compounds, were revised. For heavily doped materials, electrons are free or bound to large donor agglomerates which hinders the involvement of single donors in the radiative recombination channels. In this work, we investigated the temperature and excitation power dependencies of the photoluminescence of Cu2ZnSnS4-based solar cells in which the absorber layer was grown through sulphurization of multiperiod structuresofprecursorlayers.Forbothsamplestheluminescenceisdominatedbyanasymmetricbandwithpeak energy at∼1.22 eV, which is influenced by fluctuating potentials in both conduction and valence bands. A value of ∼60 meV was estimated for the root-mean-square depth of the tails in the conduction band. The radiative transitions involve the recombination of electrons captured by localized states in tails of the conduction band with holes localized in neighboring acceptors that follow the fluctuations in the valence band. The same acceptor level with an ionization energy of∼280 meV was identified in both absorber layers. The influence of fluctuating potentials in the electrical performance of the solar cells was discussed |
publishDate |
2014 |
dc.date.none.fl_str_mv |
2014 2014-01-01T00:00:00Z 2119-01-01T00:00:00Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10400.22/12953 |
url |
http://hdl.handle.net/10400.22/12953 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1103/PhysRevB.90.235202 |
dc.rights.driver.fl_str_mv |
metadata only access info:eu-repo/semantics/openAccess |
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metadata only access |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
American Physical Society |
publisher.none.fl_str_mv |
American Physical Society |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
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Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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RCAAP |
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RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
repository.mail.fl_str_mv |
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1799131424835502080 |