Flexible n-i-p thin film silicon solar cells on polyimide foils with textured ZnO:Ga back reflector

• Autor(a) principal: Marins, E.
• Data de Publicação: 2014
• Outros Autores: Warzecha, M., Michard, S., Hotovy, J., Böttler, W., Alpuim, P., Finger, F.
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
• Texto Completo: http://hdl.handle.net/1822/34414
• topic: Microcrystalline silicon; Transparent conducting oxide; Light trapping; Polyimide; Flexible substrate Solar cells; Flexible substrate; Solar cells; Engenharia e Tecnologia::Engenharia dos Materiais; Science & Technology

In thin film silicon solar cells on opaque substrates in n-i-p deposition sequence where the textured transparent conductive oxide (TCO) layer serves as a back reflector, one can independently optimize the morphology of the TCO layer without compromise on transparency and conductivity of this layer and further adjust the electro-optical properties of the back contact by using additional layers on top of the textured TCO. In the present work, we use this strategy to obtain textured back reflectors for solar cells in n-i-p deposition sequence on non-transparent flexible plastic foils. Gallium doped ZnO (ZnO:Ga) films were deposited on polyimide substrates by DC magnetron sputtering at a temperature of 200 °C. A wet-chemical etching step was performed by dipping the ZnO:Ga covered foil into a diluted HCl solution. The textured ZnO:Ga is then coated with a highly reflective Ag/ZnO double layer. On this back reflector, we develop thin film silicon solar cells with a microcrystalline silicon absorber layer. The current density for the cell with the textured ZnO:Ga layer is ~ 23 mA/cm2, 4 mA/cm2 higher than the one without such layer, and a maximum efficiency of 7.5% is obtained for a 1 cm2 cell.