Spectroscopic ellipsometry study of the layer structure and impurity content in Er-doped nanocrystalline silicon thin films

Detalhes bibliográficos
Autor(a) principal: Losurdo, M.
Data de Publicação: 2001
Outros Autores: Cerqueira, M. F., Stepikhova, M., Alves, E., Giangregorio, M. M., Pinto, P., Ferreira, J. A.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/1822/13990
Resumo: Er doped nc-Si thin films have been investigated by spectroscopic ellipsometry (SE). The optical response of Er ions in a nc-Si/SiO matrix has been determined by SE, and it has been used to detect Er contents as low as 0.2 at%. The complex layered nanostructure of nc-Si:Er:O has been resolved and it has been found that it is strongly influenced by the Er-doping and the oxygen in-depth distribution profile. SE results are discussed in comparison with data obtained by the standard methods of the X-ray diffraction, Rutherford backscattering and Raman spectroscopy.
id RCAP_ce412d1589758561cf23cb974ba6169b
oai_identifier_str oai:repositorium.sdum.uminho.pt:1822/13990
network_acronym_str RCAP
network_name_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository_id_str
spelling Spectroscopic ellipsometry study of the layer structure and impurity content in Er-doped nanocrystalline silicon thin filmsSpectroscopic ellipsometryNanocrystalline siliconErbiumScience & TechnologyEr doped nc-Si thin films have been investigated by spectroscopic ellipsometry (SE). The optical response of Er ions in a nc-Si/SiO matrix has been determined by SE, and it has been used to detect Er contents as low as 0.2 at%. The complex layered nanostructure of nc-Si:Er:O has been resolved and it has been found that it is strongly influenced by the Er-doping and the oxygen in-depth distribution profile. SE results are discussed in comparison with data obtained by the standard methods of the X-ray diffraction, Rutherford backscattering and Raman spectroscopy.ElsevierUniversidade do MinhoLosurdo, M.Cerqueira, M. F.Stepikhova, M.Alves, E.Giangregorio, M. M.Pinto, P.Ferreira, J. A.20012001-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/1822/13990eng0921-452610.1016/S0921-4526(01)00704-9http://www.sciencedirect.com/science/article/pii/S0921452601007049info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-21T12:22:38ZPortal AgregadorONG
dc.title.none.fl_str_mv Spectroscopic ellipsometry study of the layer structure and impurity content in Er-doped nanocrystalline silicon thin films
title Spectroscopic ellipsometry study of the layer structure and impurity content in Er-doped nanocrystalline silicon thin films
spellingShingle Spectroscopic ellipsometry study of the layer structure and impurity content in Er-doped nanocrystalline silicon thin films
Losurdo, M.
Spectroscopic ellipsometry
Nanocrystalline silicon
Erbium
Science & Technology
title_short Spectroscopic ellipsometry study of the layer structure and impurity content in Er-doped nanocrystalline silicon thin films
title_full Spectroscopic ellipsometry study of the layer structure and impurity content in Er-doped nanocrystalline silicon thin films
title_fullStr Spectroscopic ellipsometry study of the layer structure and impurity content in Er-doped nanocrystalline silicon thin films
title_full_unstemmed Spectroscopic ellipsometry study of the layer structure and impurity content in Er-doped nanocrystalline silicon thin films
title_sort Spectroscopic ellipsometry study of the layer structure and impurity content in Er-doped nanocrystalline silicon thin films
author Losurdo, M.
author_facet Losurdo, M.
Cerqueira, M. F.
Stepikhova, M.
Alves, E.
Giangregorio, M. M.
Pinto, P.
Ferreira, J. A.
author_role author
author2 Cerqueira, M. F.
Stepikhova, M.
Alves, E.
Giangregorio, M. M.
Pinto, P.
Ferreira, J. A.
author2_role author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade do Minho
dc.contributor.author.fl_str_mv Losurdo, M.
Cerqueira, M. F.
Stepikhova, M.
Alves, E.
Giangregorio, M. M.
Pinto, P.
Ferreira, J. A.
dc.subject.por.fl_str_mv Spectroscopic ellipsometry
Nanocrystalline silicon
Erbium
Science & Technology
topic Spectroscopic ellipsometry
Nanocrystalline silicon
Erbium
Science & Technology
description Er doped nc-Si thin films have been investigated by spectroscopic ellipsometry (SE). The optical response of Er ions in a nc-Si/SiO matrix has been determined by SE, and it has been used to detect Er contents as low as 0.2 at%. The complex layered nanostructure of nc-Si:Er:O has been resolved and it has been found that it is strongly influenced by the Er-doping and the oxygen in-depth distribution profile. SE results are discussed in comparison with data obtained by the standard methods of the X-ray diffraction, Rutherford backscattering and Raman spectroscopy.
publishDate 2001
dc.date.none.fl_str_mv 2001
2001-01-01T00:00:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/1822/13990
url http://hdl.handle.net/1822/13990
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 0921-4526
10.1016/S0921-4526(01)00704-9
http://www.sciencedirect.com/science/article/pii/S0921452601007049
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1777303742727585792

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