Simulation study of vertical p–n junction photodiodes’ optical performance according to CMOS technology
Autor(a) principal: | |
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Data de Publicação: | 2022 |
Outros Autores: | , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/1822/76892 |
Resumo: | CMOS photodiodes have been widely reported in microsystem applications. This article presents the design and numerical simulation of p–n junction photodiodes, using COMSOL Multi-physics, for three CMOS technologies (0.18 µm, 0.35 µm and 0.7 µm) and three different p–n junction structures: n+/p-substrate, p+/n-well and n-well/p-substrate. For these simulations, the depth junctions and dopant concentrations were set according to the different technologies. Then, each pho-todiode was spectrophotometrically characterized regarding the current, responsivity and quantum efficiency. The obtained numerical results show that the 0.18 and 0.35 µm CMOS technologies are those with the highest peak of efficiency when visible spectral ranges are needed, comparative to the 0.7 µm technology. Furthermore, the three most common p–n vertical junction photodiode structures were compared. The n+/p-substrate junction photodiode appears to be the one with the highest quantum efficiency in the visible range, which is in agreement with the literature. It can be concluded that the photodiodes’ characteristic curves and dark current values are consistent with reports in the literature. Therefore, this numerical approach allows to predict the photodiodes’ performance, helping to select the best structural design for each required application, before their microfabrication. |
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Simulation study of vertical p–n junction photodiodes’ optical performance according to CMOS technologyCADENCE IC toolsCMOSCOMSOL MultiphysicsOpticsPhotodiodesSensorsEngenharia e Tecnologia::Engenharia Eletrotécnica, Eletrónica e InformáticaScience & TechnologyCMOS photodiodes have been widely reported in microsystem applications. This article presents the design and numerical simulation of p–n junction photodiodes, using COMSOL Multi-physics, for three CMOS technologies (0.18 µm, 0.35 µm and 0.7 µm) and three different p–n junction structures: n+/p-substrate, p+/n-well and n-well/p-substrate. For these simulations, the depth junctions and dopant concentrations were set according to the different technologies. Then, each pho-todiode was spectrophotometrically characterized regarding the current, responsivity and quantum efficiency. The obtained numerical results show that the 0.18 and 0.35 µm CMOS technologies are those with the highest peak of efficiency when visible spectral ranges are needed, comparative to the 0.7 µm technology. Furthermore, the three most common p–n vertical junction photodiode structures were compared. The n+/p-substrate junction photodiode appears to be the one with the highest quantum efficiency in the visible range, which is in agreement with the literature. It can be concluded that the photodiodes’ characteristic curves and dark current values are consistent with reports in the literature. Therefore, this numerical approach allows to predict the photodiodes’ performance, helping to select the best structural design for each required application, before their microfabrication.This work was supported by Project NORTE-01-0145-FEDER-028178 funded by NORTE 2020 Portugal Regional Operational Program under PORTUGAL 2020 Partnership Agreement through the European Regional Development Fund and the Fundação para a Ciência e Tecnolo gia (FCT), IP. This work was also supported by national funds, through the Portuguese FCT, under the reference projects UIDB/04436/2020 and UIDP/04436/2020. V. Silva thanks FCT for the grant SFRH/BD/137529/2018 funded by COMPETE 2020. Susana Catarino thanks FCT for her contract funding provided through 2020.00215.CEECIND.MDPIUniversidade do MinhoFerreira, Gabriel M.Silva, Vinicius Corrêa AlvesMinas, GraçaCatarino, Susana Oliveira2022-032022-03-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/1822/76892engFerreira, G.M.; Silva, V.; Minas, G.; Catarino, S.O. Simulation Study of Vertical p–n Junction Photodiodes’ Optical Performance According to CMOS Technology. Appl. Sci. 2022, 12, 2580. https://doi.org/10.3390/app120525802076-341710.3390/app12052580https://www.mdpi.com/2076-3417/12/5/2580info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-21T12:48:35ZPortal AgregadorONG |
dc.title.none.fl_str_mv |
Simulation study of vertical p–n junction photodiodes’ optical performance according to CMOS technology |
title |
Simulation study of vertical p–n junction photodiodes’ optical performance according to CMOS technology |
spellingShingle |
Simulation study of vertical p–n junction photodiodes’ optical performance according to CMOS technology Ferreira, Gabriel M. CADENCE IC tools CMOS COMSOL Multiphysics Optics Photodiodes Sensors Engenharia e Tecnologia::Engenharia Eletrotécnica, Eletrónica e Informática Science & Technology |
title_short |
Simulation study of vertical p–n junction photodiodes’ optical performance according to CMOS technology |
title_full |
Simulation study of vertical p–n junction photodiodes’ optical performance according to CMOS technology |
title_fullStr |
Simulation study of vertical p–n junction photodiodes’ optical performance according to CMOS technology |
title_full_unstemmed |
Simulation study of vertical p–n junction photodiodes’ optical performance according to CMOS technology |
title_sort |
Simulation study of vertical p–n junction photodiodes’ optical performance according to CMOS technology |
author |
Ferreira, Gabriel M. |
author_facet |
Ferreira, Gabriel M. Silva, Vinicius Corrêa Alves Minas, Graça Catarino, Susana Oliveira |
author_role |
author |
author2 |
Silva, Vinicius Corrêa Alves Minas, Graça Catarino, Susana Oliveira |
author2_role |
author author author |
dc.contributor.none.fl_str_mv |
Universidade do Minho |
dc.contributor.author.fl_str_mv |
Ferreira, Gabriel M. Silva, Vinicius Corrêa Alves Minas, Graça Catarino, Susana Oliveira |
dc.subject.por.fl_str_mv |
CADENCE IC tools CMOS COMSOL Multiphysics Optics Photodiodes Sensors Engenharia e Tecnologia::Engenharia Eletrotécnica, Eletrónica e Informática Science & Technology |
topic |
CADENCE IC tools CMOS COMSOL Multiphysics Optics Photodiodes Sensors Engenharia e Tecnologia::Engenharia Eletrotécnica, Eletrónica e Informática Science & Technology |
description |
CMOS photodiodes have been widely reported in microsystem applications. This article presents the design and numerical simulation of p–n junction photodiodes, using COMSOL Multi-physics, for three CMOS technologies (0.18 µm, 0.35 µm and 0.7 µm) and three different p–n junction structures: n+/p-substrate, p+/n-well and n-well/p-substrate. For these simulations, the depth junctions and dopant concentrations were set according to the different technologies. Then, each pho-todiode was spectrophotometrically characterized regarding the current, responsivity and quantum efficiency. The obtained numerical results show that the 0.18 and 0.35 µm CMOS technologies are those with the highest peak of efficiency when visible spectral ranges are needed, comparative to the 0.7 µm technology. Furthermore, the three most common p–n vertical junction photodiode structures were compared. The n+/p-substrate junction photodiode appears to be the one with the highest quantum efficiency in the visible range, which is in agreement with the literature. It can be concluded that the photodiodes’ characteristic curves and dark current values are consistent with reports in the literature. Therefore, this numerical approach allows to predict the photodiodes’ performance, helping to select the best structural design for each required application, before their microfabrication. |
publishDate |
2022 |
dc.date.none.fl_str_mv |
2022-03 2022-03-01T00:00:00Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/1822/76892 |
url |
http://hdl.handle.net/1822/76892 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Ferreira, G.M.; Silva, V.; Minas, G.; Catarino, S.O. Simulation Study of Vertical p–n Junction Photodiodes’ Optical Performance According to CMOS Technology. Appl. Sci. 2022, 12, 2580. https://doi.org/10.3390/app12052580 2076-3417 10.3390/app12052580 https://www.mdpi.com/2076-3417/12/5/2580 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
MDPI |
publisher.none.fl_str_mv |
MDPI |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
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Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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