Morphological study of polycrystalline SiGe alloy deposited by vertical LPCVD

Detalhes bibliográficos
Autor(a) principal: Teixeira,R. C.
Data de Publicação: 2006
Outros Autores: Doi,I., Diniz,J. A., Swart,J. W., Zakia,M. B. P.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000300063
Resumo: As device dimensions shrink to the deep-submicron scale, new challenges arises from the very small scale used and even poly crystalline silicon (poly-Si) presents problems as gate electrode. The use of SiGe as gate material can present many advantages over the poly-Si, as it leads to a lower boron penetration and gate depletion. In this paper authors present some morphological studies of polycrystalline SiGe thin films deposited in a vertical LPCVD (Low Pressure Chemical Vapor Deposition) reactor for using as MOS (Metal Oxide Semiconductor) gate electrode.
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spelling Morphological study of polycrystalline SiGe alloy deposited by vertical LPCVDMorphological studyPolycrystalline SiGe alloyLow Pressure Chemical Vapor DepositionAs device dimensions shrink to the deep-submicron scale, new challenges arises from the very small scale used and even poly crystalline silicon (poly-Si) presents problems as gate electrode. The use of SiGe as gate material can present many advantages over the poly-Si, as it leads to a lower boron penetration and gate depletion. In this paper authors present some morphological studies of polycrystalline SiGe thin films deposited in a vertical LPCVD (Low Pressure Chemical Vapor Deposition) reactor for using as MOS (Metal Oxide Semiconductor) gate electrode.Sociedade Brasileira de Física2006-06-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000300063Brazilian Journal of Physics v.36 n.2a 2006reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332006000300063info:eu-repo/semantics/openAccessTeixeira,R. C.Doi,I.Diniz,J. A.Swart,J. W.Zakia,M. B. P.eng2006-07-06T00:00:00Zoai:scielo:S0103-97332006000300063Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2006-07-06T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv Morphological study of polycrystalline SiGe alloy deposited by vertical LPCVD
title Morphological study of polycrystalline SiGe alloy deposited by vertical LPCVD
spellingShingle Morphological study of polycrystalline SiGe alloy deposited by vertical LPCVD
Teixeira,R. C.
Morphological study
Polycrystalline SiGe alloy
Low Pressure Chemical Vapor Deposition
title_short Morphological study of polycrystalline SiGe alloy deposited by vertical LPCVD
title_full Morphological study of polycrystalline SiGe alloy deposited by vertical LPCVD
title_fullStr Morphological study of polycrystalline SiGe alloy deposited by vertical LPCVD
title_full_unstemmed Morphological study of polycrystalline SiGe alloy deposited by vertical LPCVD
title_sort Morphological study of polycrystalline SiGe alloy deposited by vertical LPCVD
author Teixeira,R. C.
author_facet Teixeira,R. C.
Doi,I.
Diniz,J. A.
Swart,J. W.
Zakia,M. B. P.
author_role author
author2 Doi,I.
Diniz,J. A.
Swart,J. W.
Zakia,M. B. P.
author2_role author
author
author
author
dc.contributor.author.fl_str_mv Teixeira,R. C.
Doi,I.
Diniz,J. A.
Swart,J. W.
Zakia,M. B. P.
dc.subject.por.fl_str_mv Morphological study
Polycrystalline SiGe alloy
Low Pressure Chemical Vapor Deposition
topic Morphological study
Polycrystalline SiGe alloy
Low Pressure Chemical Vapor Deposition
description As device dimensions shrink to the deep-submicron scale, new challenges arises from the very small scale used and even poly crystalline silicon (poly-Si) presents problems as gate electrode. The use of SiGe as gate material can present many advantages over the poly-Si, as it leads to a lower boron penetration and gate depletion. In this paper authors present some morphological studies of polycrystalline SiGe thin films deposited in a vertical LPCVD (Low Pressure Chemical Vapor Deposition) reactor for using as MOS (Metal Oxide Semiconductor) gate electrode.
publishDate 2006
dc.date.none.fl_str_mv 2006-06-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000300063
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000300063
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97332006000300063
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.36 n.2a 2006
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
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