Characterization of SnTe films grown by molecular beam epitaxy

• Autor(a) principal: Mengui,U. A.
• Data de Publicação: 2006
• Outros Autores: Abramof,E., Rappl,P. H. O., Ueta,A Y.
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Brazilian Journal of Physics
• Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000300024
• topic: SnTe; Molecular beam epitaxy; BaF2 substrates

A series of SnTe layers with thicknesses varying from 0.42 to 9.1 µm were grown by molecular beam epitaxy on (111) BaF2 substrates. The SnTe lattice parameter was found to be 6.331 Å as determined from x-ray diffraction spectra measured in the triple-axis configuration. The FWHM of the (222) SnTe x-ray rocking curves indicated a good crystalline quality and an unusual dependence on layer thickness. Atomic force microscopy (AFM) of the SnTe surface revealed spirals with monolayer steps formed around threading dislocations, similar to the PbTe on BaF2 epitaxy. The dislocation density was estimated from the AFM picture to be 9x10(8) cm-2. Small black pits corresponding to holes that were left during growth were also observed on the AFM images. Sn diffusion can be a possible reason for these pits and the relatively high dislocation density. Electrical measurements showed that the SnTe epilayers present a typical p-type carrier concentration around 10(20) cm- 3 almost temperature independent and a Hall mobility which decreases from 10(4) to 10³ cm²/V.s as the temperature increases from 10 to 350K.