Initial growth of GaN and InN over GaAs (110) substrates
Autor(a) principal: | |
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Data de Publicação: | 2004 |
Outros Autores: | , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Brazilian Journal of Physics |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000400018 |
Resumo: | We present, a systematic theoretical study of the adsorption of Ga, In and N over GaAs (110) surfaces based on parameter-free, self-consistent total energy and force calculations using the density functional theory. We analyzed the changes in the bond-lengths and in the bond-angles before and after deposition, as well as the total energy behaviour with the adsorbate chemical potential variation. Our results show that the GaN growth over GaAs (110) is energetically more favorable than the InN growth. However, the resulting InN film can be cubic only if we apply small strains on the substrate, while the GaN one is hexagonal. |
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Brazilian Journal of Physics |
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Initial growth of GaN and InN over GaAs (110) substratesWe present, a systematic theoretical study of the adsorption of Ga, In and N over GaAs (110) surfaces based on parameter-free, self-consistent total energy and force calculations using the density functional theory. We analyzed the changes in the bond-lengths and in the bond-angles before and after deposition, as well as the total energy behaviour with the adsorbate chemical potential variation. Our results show that the GaN growth over GaAs (110) is energetically more favorable than the InN growth. However, the resulting InN film can be cubic only if we apply small strains on the substrate, while the GaN one is hexagonal.Sociedade Brasileira de Física2004-06-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000400018Brazilian Journal of Physics v.34 n.2b 2004reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332004000400018info:eu-repo/semantics/openAccessPaiva,A. deAlves,J. L. A.Alves,H. W. Leiteeng2004-08-31T00:00:00Zoai:scielo:S0103-97332004000400018Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2004-08-31T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false |
dc.title.none.fl_str_mv |
Initial growth of GaN and InN over GaAs (110) substrates |
title |
Initial growth of GaN and InN over GaAs (110) substrates |
spellingShingle |
Initial growth of GaN and InN over GaAs (110) substrates Paiva,A. de |
title_short |
Initial growth of GaN and InN over GaAs (110) substrates |
title_full |
Initial growth of GaN and InN over GaAs (110) substrates |
title_fullStr |
Initial growth of GaN and InN over GaAs (110) substrates |
title_full_unstemmed |
Initial growth of GaN and InN over GaAs (110) substrates |
title_sort |
Initial growth of GaN and InN over GaAs (110) substrates |
author |
Paiva,A. de |
author_facet |
Paiva,A. de Alves,J. L. A. Alves,H. W. Leite |
author_role |
author |
author2 |
Alves,J. L. A. Alves,H. W. Leite |
author2_role |
author author |
dc.contributor.author.fl_str_mv |
Paiva,A. de Alves,J. L. A. Alves,H. W. Leite |
description |
We present, a systematic theoretical study of the adsorption of Ga, In and N over GaAs (110) surfaces based on parameter-free, self-consistent total energy and force calculations using the density functional theory. We analyzed the changes in the bond-lengths and in the bond-angles before and after deposition, as well as the total energy behaviour with the adsorbate chemical potential variation. Our results show that the GaN growth over GaAs (110) is energetically more favorable than the InN growth. However, the resulting InN film can be cubic only if we apply small strains on the substrate, while the GaN one is hexagonal. |
publishDate |
2004 |
dc.date.none.fl_str_mv |
2004-06-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000400018 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000400018 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/S0103-97332004000400018 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
dc.source.none.fl_str_mv |
Brazilian Journal of Physics v.34 n.2b 2004 reponame:Brazilian Journal of Physics instname:Sociedade Brasileira de Física (SBF) instacron:SBF |
instname_str |
Sociedade Brasileira de Física (SBF) |
instacron_str |
SBF |
institution |
SBF |
reponame_str |
Brazilian Journal of Physics |
collection |
Brazilian Journal of Physics |
repository.name.fl_str_mv |
Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF) |
repository.mail.fl_str_mv |
sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br |
_version_ |
1754734860830769152 |