Design Equations for Spiral and Scalable Cross Inductors on 0.35 μm CMOS Technology
Autor(a) principal: | |
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Data de Publicação: | 2018 |
Outros Autores: | , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Journal of Microwaves. Optoelectronics and Electromagnetic Applications |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S2179-10742018000300403 |
Resumo: | Abstract This paper presents a set of design equations for spiral and new scalable cross inductors in CMOS 0.35 μm technology, relating electrical parameters of the inductor's equivalent circuit as functions of its geometric dimensions. The procedure used to derive the design equations is described and involves electromagnetic simulation of inductors with different geometric dimensions, extraction of values for equivalent circuit model elements for each inductor and the use of multivariate regression analysis applied to generalized linear models (GLM) based on Design of Experiments (DoE). A nine element π-type equivalent electrical circuit was used for the inductors, where all element values are constants, allowing simulation on SPICE-like software. Results from the models obtained for both spiral and scalable cross inductors presented closely match to the simulated results. |
id |
SBMO-1_eb2dc20b2454ca8ef9cec05d8096a6ff |
---|---|
oai_identifier_str |
oai:scielo:S2179-10742018000300403 |
network_acronym_str |
SBMO-1 |
network_name_str |
Journal of Microwaves. Optoelectronics and Electromagnetic Applications |
repository_id_str |
|
spelling |
Design Equations for Spiral and Scalable Cross Inductors on 0.35 μm CMOS TechnologyPlanar inductorDesign of ExperimentsEM simulationMathematical modelAbstract This paper presents a set of design equations for spiral and new scalable cross inductors in CMOS 0.35 μm technology, relating electrical parameters of the inductor's equivalent circuit as functions of its geometric dimensions. The procedure used to derive the design equations is described and involves electromagnetic simulation of inductors with different geometric dimensions, extraction of values for equivalent circuit model elements for each inductor and the use of multivariate regression analysis applied to generalized linear models (GLM) based on Design of Experiments (DoE). A nine element π-type equivalent electrical circuit was used for the inductors, where all element values are constants, allowing simulation on SPICE-like software. Results from the models obtained for both spiral and scalable cross inductors presented closely match to the simulated results.Sociedade Brasileira de Microondas e Optoeletrônica e Sociedade Brasileira de Eletromagnetismo2018-09-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S2179-10742018000300403Journal of Microwaves, Optoelectronics and Electromagnetic Applications v.17 n.3 2018reponame:Journal of Microwaves. Optoelectronics and Electromagnetic Applicationsinstname:Sociedade Brasileira de Microondas e Optoeletrônica (SBMO)instacron:SBMO10.1590/2179-10742018v17i31215info:eu-repo/semantics/openAccessFontebasso Neto,JoséMoreira,Luiz CarlosCorrera,Fatima Saleteeng2018-10-08T00:00:00Zoai:scielo:S2179-10742018000300403Revistahttp://www.jmoe.org/index.php/jmoe/indexONGhttps://old.scielo.br/oai/scielo-oai.php||editor_jmoe@sbmo.org.br2179-10742179-1074opendoar:2018-10-08T00:00Journal of Microwaves. Optoelectronics and Electromagnetic Applications - Sociedade Brasileira de Microondas e Optoeletrônica (SBMO)false |
dc.title.none.fl_str_mv |
Design Equations for Spiral and Scalable Cross Inductors on 0.35 μm CMOS Technology |
title |
Design Equations for Spiral and Scalable Cross Inductors on 0.35 μm CMOS Technology |
spellingShingle |
Design Equations for Spiral and Scalable Cross Inductors on 0.35 μm CMOS Technology Fontebasso Neto,José Planar inductor Design of Experiments EM simulation Mathematical model |
title_short |
Design Equations for Spiral and Scalable Cross Inductors on 0.35 μm CMOS Technology |
title_full |
Design Equations for Spiral and Scalable Cross Inductors on 0.35 μm CMOS Technology |
title_fullStr |
Design Equations for Spiral and Scalable Cross Inductors on 0.35 μm CMOS Technology |
title_full_unstemmed |
Design Equations for Spiral and Scalable Cross Inductors on 0.35 μm CMOS Technology |
title_sort |
Design Equations for Spiral and Scalable Cross Inductors on 0.35 μm CMOS Technology |
author |
Fontebasso Neto,José |
author_facet |
Fontebasso Neto,José Moreira,Luiz Carlos Correra,Fatima Salete |
author_role |
author |
author2 |
Moreira,Luiz Carlos Correra,Fatima Salete |
author2_role |
author author |
dc.contributor.author.fl_str_mv |
Fontebasso Neto,José Moreira,Luiz Carlos Correra,Fatima Salete |
dc.subject.por.fl_str_mv |
Planar inductor Design of Experiments EM simulation Mathematical model |
topic |
Planar inductor Design of Experiments EM simulation Mathematical model |
description |
Abstract This paper presents a set of design equations for spiral and new scalable cross inductors in CMOS 0.35 μm technology, relating electrical parameters of the inductor's equivalent circuit as functions of its geometric dimensions. The procedure used to derive the design equations is described and involves electromagnetic simulation of inductors with different geometric dimensions, extraction of values for equivalent circuit model elements for each inductor and the use of multivariate regression analysis applied to generalized linear models (GLM) based on Design of Experiments (DoE). A nine element π-type equivalent electrical circuit was used for the inductors, where all element values are constants, allowing simulation on SPICE-like software. Results from the models obtained for both spiral and scalable cross inductors presented closely match to the simulated results. |
publishDate |
2018 |
dc.date.none.fl_str_mv |
2018-09-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S2179-10742018000300403 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S2179-10742018000300403 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/2179-10742018v17i31215 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
Sociedade Brasileira de Microondas e Optoeletrônica e Sociedade Brasileira de Eletromagnetismo |
publisher.none.fl_str_mv |
Sociedade Brasileira de Microondas e Optoeletrônica e Sociedade Brasileira de Eletromagnetismo |
dc.source.none.fl_str_mv |
Journal of Microwaves, Optoelectronics and Electromagnetic Applications v.17 n.3 2018 reponame:Journal of Microwaves. Optoelectronics and Electromagnetic Applications instname:Sociedade Brasileira de Microondas e Optoeletrônica (SBMO) instacron:SBMO |
instname_str |
Sociedade Brasileira de Microondas e Optoeletrônica (SBMO) |
instacron_str |
SBMO |
institution |
SBMO |
reponame_str |
Journal of Microwaves. Optoelectronics and Electromagnetic Applications |
collection |
Journal of Microwaves. Optoelectronics and Electromagnetic Applications |
repository.name.fl_str_mv |
Journal of Microwaves. Optoelectronics and Electromagnetic Applications - Sociedade Brasileira de Microondas e Optoeletrônica (SBMO) |
repository.mail.fl_str_mv |
||editor_jmoe@sbmo.org.br |
_version_ |
1752122126559608832 |