Localização em poço quântico de Ga_(1-x)Al_(x)AsGaAs com campo magnético inclinado intenso

• Autor(a) principal: Dourado, Tiago Pereira
• Data de Publicação: 2013
• Tipo de documento: Dissertação
• Idioma: por
• Título da fonte: Biblioteca Digital de Teses e Dissertações da UERJ
• Texto Completo: http://www.bdtd.uerj.br/handle/1/12947
• topic: Parabolic quantum well; Spintronics; Semiconductor nanostructures; Landau levels; Poço quântico parabólico; Spintrônica; Nanoestruturas semicondutoras; Níveis de Landau; CNPQ::CIENCIAS EXATAS E DA TERRA::FISICA::FISICA DA MATERIA CONDENSADA

In this thesis we present our results for the calculation of the states of a twodimensional electron gas, confined inside a Ga_(1-x)Al_(x)As parabolic quantum well and submitted to a tilted intense magnetic field. We present an exact analytical solution for the case of a non-interacting electron gas. We demonstrate that the effective Landé's factor, g*, which depends on the Al concentration and, therefore, on position, contributes also to the natural frequencies involved, providing spin-polarized states, besides of the polarization of the Zeeman splitting, this one given by the G-fator of GaAs. Extending our work beyond this treatment, we included an external electric field along the growth direction, in order to modulate the charge distribution inside the well, controlling, in that way, the crossing of the energy levels. Numerical calculation are provided for several values of the tilt angle and the intensity of the magnetic field.