Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions

Detalhes bibliográficos
Autor(a) principal: Fontana, Marcio
Data de Publicação: 2013
Outros Autores: Deppe, Tristan, Boyd, Anthony K., Rinzan, Mohamed, Liu, Amy Y., Paranjape, Makarand, Barbara, Paola
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFBA
Texto Completo: http://repositorio.ufba.br/ri/handle/ri/13964
Resumo: p. 1-5
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spelling Fontana, MarcioDeppe, TristanBoyd, Anthony K.Rinzan, MohamedLiu, Amy Y.Paranjape, MakarandBarbara, Paola2013-11-27T12:53:20Z2013-11-27T12:53:20Z20132045-2322http://repositorio.ufba.br/ri/handle/ri/13964v. 3, n. 1634p. 1-5Semiconducting molybdenum disulfphide has emerged as an attractive material for novel nanoscale optoelectronic devices due to its reduced dimensionality and large direct bandgap. Since optoelectronic devices require electron-hole generation/recombination, it is important to be able to fabricate ambipolar transistors to investigate charge transport both in the conduction band and in the valence band. Although n-type transistor operation for single-layer and few-layer MoS2 with gold source and drain contacts was recently demonstrated, transport in the valence band has been elusive for solid-state devices. Here we show that a multi-layer MoS2 channel can be hole-doped by palladium contacts, yielding MoS2 p-type transistors. When two different materials are used for the source and drain contacts, for example hole-doping Pd and electron-doping Au, the Schottky junctions formed at the MoS2 contacts produce a clear photovoltaic effect.Submitted by Santiago Fabio (fabio.ssantiago@hotmail.com) on 2013-11-26T19:44:38Z No. of bitstreams: 1 222222r.pdf: 799527 bytes, checksum: ac6f6abf24223955440f7105925d65b0 (MD5)Approved for entry into archive by LIVIA FREITAS (livia.freitas@ufba.br) on 2013-11-27T12:53:19Z (GMT) No. of bitstreams: 1 222222r.pdf: 799527 bytes, checksum: ac6f6abf24223955440f7105925d65b0 (MD5)Made available in DSpace on 2013-11-27T12:53:20Z (GMT). No. of bitstreams: 1 222222r.pdf: 799527 bytes, checksum: ac6f6abf24223955440f7105925d65b0 (MD5) Previous issue date: 2013SalvadorScientific ReportsBrasilhttp://www.nature.com/srep/2013/130409/srep01634/pdf/srep01634.pdfreponame:Repositório Institucional da UFBAinstname:Universidade Federal da Bahia (UFBA)instacron:UFBAElectron-hole transport and photovoltaic effect in gated MoS2 Schottky junctionsScientific Reportsinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleinfo:eu-repo/semantics/openAccessengORIGINAL222222r.pdf222222r.pdfapplication/pdf799527https://repositorio.ufba.br/bitstream/ri/13964/1/222222r.pdfac6f6abf24223955440f7105925d65b0MD51LICENSElicense.txtlicense.txttext/plain1345https://repositorio.ufba.br/bitstream/ri/13964/2/license.txtff6eaa8b858ea317fded99f125f5fcd0MD52TEXT222222r.pdf.txt222222r.pdf.txtExtracted texttext/plain23707https://repositorio.ufba.br/bitstream/ri/13964/3/222222r.pdf.txt6ff795f0be3d5307e161cbd066be2c2fMD53ri/139642022-03-30 20:56:26.708oai:repositorio.ufba.br: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Repositório InstitucionalPUBhttp://192.188.11.11:8080/oai/requestopendoar:19322022-03-30T23:56:26Repositório Institucional da UFBA - Universidade Federal da Bahia (UFBA)false
dc.title.pt_BR.fl_str_mv Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions
dc.title.alternative.pt_BR.fl_str_mv Scientific Reports
title Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions
spellingShingle Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions
Fontana, Marcio
title_short Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions
title_full Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions
title_fullStr Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions
title_full_unstemmed Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions
title_sort Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions
author Fontana, Marcio
author_facet Fontana, Marcio
Deppe, Tristan
Boyd, Anthony K.
Rinzan, Mohamed
Liu, Amy Y.
Paranjape, Makarand
Barbara, Paola
author_role author
author2 Deppe, Tristan
Boyd, Anthony K.
Rinzan, Mohamed
Liu, Amy Y.
Paranjape, Makarand
Barbara, Paola
author2_role author
author
author
author
author
author
dc.contributor.author.fl_str_mv Fontana, Marcio
Deppe, Tristan
Boyd, Anthony K.
Rinzan, Mohamed
Liu, Amy Y.
Paranjape, Makarand
Barbara, Paola
description p. 1-5
publishDate 2013
dc.date.accessioned.fl_str_mv 2013-11-27T12:53:20Z
dc.date.available.fl_str_mv 2013-11-27T12:53:20Z
dc.date.issued.fl_str_mv 2013
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
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dc.identifier.uri.fl_str_mv http://repositorio.ufba.br/ri/handle/ri/13964
dc.identifier.issn.none.fl_str_mv 2045-2322
dc.identifier.number.pt_BR.fl_str_mv v. 3, n. 1634
identifier_str_mv 2045-2322
v. 3, n. 1634
url http://repositorio.ufba.br/ri/handle/ri/13964
dc.language.iso.fl_str_mv eng
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