Nitrogen transport during rapid thermal growth of silicon oxynitride films in N/sub 2/ O

• Autor(a) principal: Baumvol, Israel Jacob Rabin
• Data de Publicação: 1996
• Outros Autores: Stedile, Fernanda Chiarello, Ganem, Jean-Jacques, Trimaille, Isabelle, Rigo, Serge
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UFRGS
• Texto Completo: http://hdl.handle.net/10183/140707
• topic: Física da matéria condensada; Nitrogênio; Filmes finos; Filmes finos : Crescimento : Tratamento térmico

We investigated the transport of nitrogenous species during rapid thermal growth of silicon oxynitride films on Si in N2O, using N isotopic tracing and high resolution depth profiling techniques. The results indicate that the diffusion of nitrogenous species ~most probably NO! through the growing oxynitride film to react with Si at the oxynitride/Si interface, induces the incorporation of N near this interface. This mechanism acts in parallel with a site-to-site jump mechanism ~interstitialcy or vacancy! of diffusion and chemical reaction of nitrogenous species in the volume of the growing oxynitride film. The characteristic N accumulation only near the interface obtained by rapid thermal processing growth in N2O is due to the removal of N from the near surface region of the films, here attributed to atomic exchanges O-N taking place during growth. Furthermore, N-N exchange was also observed.