Electrical isolation of GaN by MeV ion irradiation

Detalhes bibliográficos
Autor(a) principal: Boudinov, Henri Ivanov
Data de Publicação: 2001
Outros Autores: Kucheyev, Sergei O., Williams, J.S., Jagadish, Chenupati, Li, Gang
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/141082
Resumo: The evolution of sheet resistance of n-type GaN epilayers exposed to irradiation with MeV H, Li, C, and O ions is studied in situ. Results show that the threshold dose necessary for complete isolation linearly depends on the original free electron concentration and reciprocally depends on the number of atomic displacements produced by ion irradiation. Furthermore, such isolation is stable to rapid thermal annealing at temperatures up to 900 °C. In addition to providing a better understanding of the physical mechanisms responsible for electrical isolation, these results can be used for choosing implant conditions necessary for an effective electrical isolation of GaN-based devices.
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spelling Boudinov, Henri IvanovKucheyev, Sergei O.Williams, J.S.Jagadish, ChenupatiLi, Gang2016-05-14T02:07:45Z20010003-6951http://hdl.handle.net/10183/141082000288366The evolution of sheet resistance of n-type GaN epilayers exposed to irradiation with MeV H, Li, C, and O ions is studied in situ. Results show that the threshold dose necessary for complete isolation linearly depends on the original free electron concentration and reciprocally depends on the number of atomic displacements produced by ion irradiation. Furthermore, such isolation is stable to rapid thermal annealing at temperatures up to 900 °C. In addition to providing a better understanding of the physical mechanisms responsible for electrical isolation, these results can be used for choosing implant conditions necessary for an effective electrical isolation of GaN-based devices.application/pdfengApplied physics letters. Melville. Vol. 78, no. 7 (Feb. 2001), p. 943-945Resistividade elétricaCompostos de galioSemicondutores iii-vEfeitos de feixe iônicoRecozimento térmico rápidoSemicondutores de gap largoElectrical isolation of GaN by MeV ion irradiationEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000288366.pdf000288366.pdfTexto completo (inglês)application/pdf396281http://www.lume.ufrgs.br/bitstream/10183/141082/1/000288366.pdfe9b88391ea39fa11b3447b9773717044MD51TEXT000288366.pdf.txt000288366.pdf.txtExtracted Texttext/plain16161http://www.lume.ufrgs.br/bitstream/10183/141082/2/000288366.pdf.txt880b740cc78a589df5d631d1f0c0c623MD52THUMBNAIL000288366.pdf.jpg000288366.pdf.jpgGenerated Thumbnailimage/jpeg2086http://www.lume.ufrgs.br/bitstream/10183/141082/3/000288366.pdf.jpgd2b385caf31ee9a73a1df470218796d2MD5310183/1410822020-01-16 05:09:14.949527oai:www.lume.ufrgs.br:10183/141082Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2020-01-16T07:09:14Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Electrical isolation of GaN by MeV ion irradiation
title Electrical isolation of GaN by MeV ion irradiation
spellingShingle Electrical isolation of GaN by MeV ion irradiation
Boudinov, Henri Ivanov
Resistividade elétrica
Compostos de galio
Semicondutores iii-v
Efeitos de feixe iônico
Recozimento térmico rápido
Semicondutores de gap largo
title_short Electrical isolation of GaN by MeV ion irradiation
title_full Electrical isolation of GaN by MeV ion irradiation
title_fullStr Electrical isolation of GaN by MeV ion irradiation
title_full_unstemmed Electrical isolation of GaN by MeV ion irradiation
title_sort Electrical isolation of GaN by MeV ion irradiation
author Boudinov, Henri Ivanov
author_facet Boudinov, Henri Ivanov
Kucheyev, Sergei O.
Williams, J.S.
Jagadish, Chenupati
Li, Gang
author_role author
author2 Kucheyev, Sergei O.
Williams, J.S.
Jagadish, Chenupati
Li, Gang
author2_role author
author
author
author
dc.contributor.author.fl_str_mv Boudinov, Henri Ivanov
Kucheyev, Sergei O.
Williams, J.S.
Jagadish, Chenupati
Li, Gang
dc.subject.por.fl_str_mv Resistividade elétrica
Compostos de galio
Semicondutores iii-v
Efeitos de feixe iônico
Recozimento térmico rápido
Semicondutores de gap largo
topic Resistividade elétrica
Compostos de galio
Semicondutores iii-v
Efeitos de feixe iônico
Recozimento térmico rápido
Semicondutores de gap largo
description The evolution of sheet resistance of n-type GaN epilayers exposed to irradiation with MeV H, Li, C, and O ions is studied in situ. Results show that the threshold dose necessary for complete isolation linearly depends on the original free electron concentration and reciprocally depends on the number of atomic displacements produced by ion irradiation. Furthermore, such isolation is stable to rapid thermal annealing at temperatures up to 900 °C. In addition to providing a better understanding of the physical mechanisms responsible for electrical isolation, these results can be used for choosing implant conditions necessary for an effective electrical isolation of GaN-based devices.
publishDate 2001
dc.date.issued.fl_str_mv 2001
dc.date.accessioned.fl_str_mv 2016-05-14T02:07:45Z
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/141082
dc.identifier.issn.pt_BR.fl_str_mv 0003-6951
dc.identifier.nrb.pt_BR.fl_str_mv 000288366
identifier_str_mv 0003-6951
000288366
url http://hdl.handle.net/10183/141082
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Applied physics letters. Melville. Vol. 78, no. 7 (Feb. 2001), p. 943-945
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