Energy loss in medium-energy ion scattering : a combined theoretical and experimental study of the model system Y on Si(111)

Bibliographic Details
Main Author: Muñoz-Marques, M. A.
Publication Date: 2005
Other Authors: Parkinson, Gareth, Woodruff, D. P., Silva Junior, Agenor Hentz da, Grande, Pedro Luis, Schwietz, Gregor, Wood, Tim J., Bonet, Chris, Tear, Steve P., Bailey, Paul, Noakes, Tim C. Q.
Format: Article
Language: eng
Source: Repositório Institucional da UFRGS
Download full: http://hdl.handle.net/10183/104304
Summary: The energy-loss spectrum associated with scattering of 100 keV H+ ions from Y atoms on Si (111) has been investigated both experimentally and theoretically. Measurements were made from Y overlayers, and from the Si (111) (1X1) two-dimensional silicide phase formed by Y on this surface, in various scattering geometries and with different surface preparations. Theoretical simulations were conducted based on calculations of the energy loss experienced in specific ion trajectories through the surface, using coupled-channel calculations to describe inner-shell ionization and excitation as a function of impact parameter. The experimental results indicate that additional broadening contributions arise from surface inhomogeneity and roughness, but for near-normal incident and outgoing trajectories the theory and experiment agree quite well. The calculations show that, even for the ideal two-dimensional silicide phase in which the Y atoms lie just below the surface, significant energy loss arises from interaction of the ions with surrounding Si atoms, leading to a complete loss of intensity at zero energy loss.
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spelling Muñoz-Marques, M. A.Parkinson, GarethWoodruff, D. P.Silva Junior, Agenor Hentz daGrande, Pedro LuisSchwietz, GregorWood, Tim J.Bonet, ChrisTear, Steve P.Bailey, PaulNoakes, Tim C. Q.2014-10-09T02:13:09Z20051098-0121http://hdl.handle.net/10183/104304000532908The energy-loss spectrum associated with scattering of 100 keV H+ ions from Y atoms on Si (111) has been investigated both experimentally and theoretically. Measurements were made from Y overlayers, and from the Si (111) (1X1) two-dimensional silicide phase formed by Y on this surface, in various scattering geometries and with different surface preparations. Theoretical simulations were conducted based on calculations of the energy loss experienced in specific ion trajectories through the surface, using coupled-channel calculations to describe inner-shell ionization and excitation as a function of impact parameter. The experimental results indicate that additional broadening contributions arise from surface inhomogeneity and roughness, but for near-normal incident and outgoing trajectories the theory and experiment agree quite well. The calculations show that, even for the ideal two-dimensional silicide phase in which the Y atoms lie just below the surface, significant energy loss arises from interaction of the ions with surrounding Si atoms, leading to a complete loss of intensity at zero energy loss.application/pdfengPhysical review. B, Condensed matter and materials physics. Woodbury. Vol. 72, no. 7 (Aug. 2005), 075415 10p.Semicondutores elementaresPerda de energia de particulasImpacto ion-superfícieSilicio 111ItrioRetroespalhamentoEnergy loss in medium-energy ion scattering : a combined theoretical and experimental study of the model system Y on Si(111)Estrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000532908.pdf000532908.pdfTexto completo (inglês)application/pdf161020http://www.lume.ufrgs.br/bitstream/10183/104304/1/000532908.pdff072cd1dc3cc22f6211519c58ee0b7b4MD51TEXT000532908.pdf.txt000532908.pdf.txtExtracted Texttext/plain53202http://www.lume.ufrgs.br/bitstream/10183/104304/2/000532908.pdf.txt1ec1a3267ca069ba4445ef072ac1be05MD52THUMBNAIL000532908.pdf.jpg000532908.pdf.jpgGenerated Thumbnailimage/jpeg1988http://www.lume.ufrgs.br/bitstream/10183/104304/3/000532908.pdf.jpg3eb930c4271a915b666c9ce0de66c337MD5310183/1043042024-05-29 06:42:43.092288oai:www.lume.ufrgs.br:10183/104304Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2024-05-29T09:42:43Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Energy loss in medium-energy ion scattering : a combined theoretical and experimental study of the model system Y on Si(111)
title Energy loss in medium-energy ion scattering : a combined theoretical and experimental study of the model system Y on Si(111)
spellingShingle Energy loss in medium-energy ion scattering : a combined theoretical and experimental study of the model system Y on Si(111)
Muñoz-Marques, M. A.
Semicondutores elementares
Perda de energia de particulas
Impacto ion-superfície
Silicio 111
Itrio
Retroespalhamento
title_short Energy loss in medium-energy ion scattering : a combined theoretical and experimental study of the model system Y on Si(111)
title_full Energy loss in medium-energy ion scattering : a combined theoretical and experimental study of the model system Y on Si(111)
title_fullStr Energy loss in medium-energy ion scattering : a combined theoretical and experimental study of the model system Y on Si(111)
title_full_unstemmed Energy loss in medium-energy ion scattering : a combined theoretical and experimental study of the model system Y on Si(111)
title_sort Energy loss in medium-energy ion scattering : a combined theoretical and experimental study of the model system Y on Si(111)
author Muñoz-Marques, M. A.
author_facet Muñoz-Marques, M. A.
Parkinson, Gareth
Woodruff, D. P.
Silva Junior, Agenor Hentz da
Grande, Pedro Luis
Schwietz, Gregor
Wood, Tim J.
Bonet, Chris
Tear, Steve P.
Bailey, Paul
Noakes, Tim C. Q.
author_role author
author2 Parkinson, Gareth
Woodruff, D. P.
Silva Junior, Agenor Hentz da
Grande, Pedro Luis
Schwietz, Gregor
Wood, Tim J.
Bonet, Chris
Tear, Steve P.
Bailey, Paul
Noakes, Tim C. Q.
author2_role author
author
author
author
author
author
author
author
author
author
dc.contributor.author.fl_str_mv Muñoz-Marques, M. A.
Parkinson, Gareth
Woodruff, D. P.
Silva Junior, Agenor Hentz da
Grande, Pedro Luis
Schwietz, Gregor
Wood, Tim J.
Bonet, Chris
Tear, Steve P.
Bailey, Paul
Noakes, Tim C. Q.
dc.subject.por.fl_str_mv Semicondutores elementares
Perda de energia de particulas
Impacto ion-superfície
Silicio 111
Itrio
Retroespalhamento
topic Semicondutores elementares
Perda de energia de particulas
Impacto ion-superfície
Silicio 111
Itrio
Retroespalhamento
description The energy-loss spectrum associated with scattering of 100 keV H+ ions from Y atoms on Si (111) has been investigated both experimentally and theoretically. Measurements were made from Y overlayers, and from the Si (111) (1X1) two-dimensional silicide phase formed by Y on this surface, in various scattering geometries and with different surface preparations. Theoretical simulations were conducted based on calculations of the energy loss experienced in specific ion trajectories through the surface, using coupled-channel calculations to describe inner-shell ionization and excitation as a function of impact parameter. The experimental results indicate that additional broadening contributions arise from surface inhomogeneity and roughness, but for near-normal incident and outgoing trajectories the theory and experiment agree quite well. The calculations show that, even for the ideal two-dimensional silicide phase in which the Y atoms lie just below the surface, significant energy loss arises from interaction of the ions with surrounding Si atoms, leading to a complete loss of intensity at zero energy loss.
publishDate 2005
dc.date.issued.fl_str_mv 2005
dc.date.accessioned.fl_str_mv 2014-10-09T02:13:09Z
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/104304
dc.identifier.issn.pt_BR.fl_str_mv 1098-0121
dc.identifier.nrb.pt_BR.fl_str_mv 000532908
identifier_str_mv 1098-0121
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url http://hdl.handle.net/10183/104304
dc.language.iso.fl_str_mv eng
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dc.relation.ispartof.pt_BR.fl_str_mv Physical review. B, Condensed matter and materials physics. Woodbury. Vol. 72, no. 7 (Aug. 2005), 075415 10p.
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