Energy loss in medium-energy ion scattering : a combined theoretical and experimental study of the model system Y on Si(111)
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Publication Date: | 2005 |
Other Authors: | , , , , , , , , , |
Format: | Article |
Language: | eng |
Source: | Repositório Institucional da UFRGS |
Download full: | http://hdl.handle.net/10183/104304 |
Summary: | The energy-loss spectrum associated with scattering of 100 keV H+ ions from Y atoms on Si (111) has been investigated both experimentally and theoretically. Measurements were made from Y overlayers, and from the Si (111) (1X1) two-dimensional silicide phase formed by Y on this surface, in various scattering geometries and with different surface preparations. Theoretical simulations were conducted based on calculations of the energy loss experienced in specific ion trajectories through the surface, using coupled-channel calculations to describe inner-shell ionization and excitation as a function of impact parameter. The experimental results indicate that additional broadening contributions arise from surface inhomogeneity and roughness, but for near-normal incident and outgoing trajectories the theory and experiment agree quite well. The calculations show that, even for the ideal two-dimensional silicide phase in which the Y atoms lie just below the surface, significant energy loss arises from interaction of the ions with surrounding Si atoms, leading to a complete loss of intensity at zero energy loss. |
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Muñoz-Marques, M. A.Parkinson, GarethWoodruff, D. P.Silva Junior, Agenor Hentz daGrande, Pedro LuisSchwietz, GregorWood, Tim J.Bonet, ChrisTear, Steve P.Bailey, PaulNoakes, Tim C. Q.2014-10-09T02:13:09Z20051098-0121http://hdl.handle.net/10183/104304000532908The energy-loss spectrum associated with scattering of 100 keV H+ ions from Y atoms on Si (111) has been investigated both experimentally and theoretically. Measurements were made from Y overlayers, and from the Si (111) (1X1) two-dimensional silicide phase formed by Y on this surface, in various scattering geometries and with different surface preparations. Theoretical simulations were conducted based on calculations of the energy loss experienced in specific ion trajectories through the surface, using coupled-channel calculations to describe inner-shell ionization and excitation as a function of impact parameter. The experimental results indicate that additional broadening contributions arise from surface inhomogeneity and roughness, but for near-normal incident and outgoing trajectories the theory and experiment agree quite well. The calculations show that, even for the ideal two-dimensional silicide phase in which the Y atoms lie just below the surface, significant energy loss arises from interaction of the ions with surrounding Si atoms, leading to a complete loss of intensity at zero energy loss.application/pdfengPhysical review. B, Condensed matter and materials physics. Woodbury. Vol. 72, no. 7 (Aug. 2005), 075415 10p.Semicondutores elementaresPerda de energia de particulasImpacto ion-superfícieSilicio 111ItrioRetroespalhamentoEnergy loss in medium-energy ion scattering : a combined theoretical and experimental study of the model system Y on Si(111)Estrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000532908.pdf000532908.pdfTexto completo (inglês)application/pdf161020http://www.lume.ufrgs.br/bitstream/10183/104304/1/000532908.pdff072cd1dc3cc22f6211519c58ee0b7b4MD51TEXT000532908.pdf.txt000532908.pdf.txtExtracted Texttext/plain53202http://www.lume.ufrgs.br/bitstream/10183/104304/2/000532908.pdf.txt1ec1a3267ca069ba4445ef072ac1be05MD52THUMBNAIL000532908.pdf.jpg000532908.pdf.jpgGenerated Thumbnailimage/jpeg1988http://www.lume.ufrgs.br/bitstream/10183/104304/3/000532908.pdf.jpg3eb930c4271a915b666c9ce0de66c337MD5310183/1043042024-05-29 06:42:43.092288oai:www.lume.ufrgs.br:10183/104304Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2024-05-29T09:42:43Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
Energy loss in medium-energy ion scattering : a combined theoretical and experimental study of the model system Y on Si(111) |
title |
Energy loss in medium-energy ion scattering : a combined theoretical and experimental study of the model system Y on Si(111) |
spellingShingle |
Energy loss in medium-energy ion scattering : a combined theoretical and experimental study of the model system Y on Si(111) Muñoz-Marques, M. A. Semicondutores elementares Perda de energia de particulas Impacto ion-superfície Silicio 111 Itrio Retroespalhamento |
title_short |
Energy loss in medium-energy ion scattering : a combined theoretical and experimental study of the model system Y on Si(111) |
title_full |
Energy loss in medium-energy ion scattering : a combined theoretical and experimental study of the model system Y on Si(111) |
title_fullStr |
Energy loss in medium-energy ion scattering : a combined theoretical and experimental study of the model system Y on Si(111) |
title_full_unstemmed |
Energy loss in medium-energy ion scattering : a combined theoretical and experimental study of the model system Y on Si(111) |
title_sort |
Energy loss in medium-energy ion scattering : a combined theoretical and experimental study of the model system Y on Si(111) |
author |
Muñoz-Marques, M. A. |
author_facet |
Muñoz-Marques, M. A. Parkinson, Gareth Woodruff, D. P. Silva Junior, Agenor Hentz da Grande, Pedro Luis Schwietz, Gregor Wood, Tim J. Bonet, Chris Tear, Steve P. Bailey, Paul Noakes, Tim C. Q. |
author_role |
author |
author2 |
Parkinson, Gareth Woodruff, D. P. Silva Junior, Agenor Hentz da Grande, Pedro Luis Schwietz, Gregor Wood, Tim J. Bonet, Chris Tear, Steve P. Bailey, Paul Noakes, Tim C. Q. |
author2_role |
author author author author author author author author author author |
dc.contributor.author.fl_str_mv |
Muñoz-Marques, M. A. Parkinson, Gareth Woodruff, D. P. Silva Junior, Agenor Hentz da Grande, Pedro Luis Schwietz, Gregor Wood, Tim J. Bonet, Chris Tear, Steve P. Bailey, Paul Noakes, Tim C. Q. |
dc.subject.por.fl_str_mv |
Semicondutores elementares Perda de energia de particulas Impacto ion-superfície Silicio 111 Itrio Retroespalhamento |
topic |
Semicondutores elementares Perda de energia de particulas Impacto ion-superfície Silicio 111 Itrio Retroespalhamento |
description |
The energy-loss spectrum associated with scattering of 100 keV H+ ions from Y atoms on Si (111) has been investigated both experimentally and theoretically. Measurements were made from Y overlayers, and from the Si (111) (1X1) two-dimensional silicide phase formed by Y on this surface, in various scattering geometries and with different surface preparations. Theoretical simulations were conducted based on calculations of the energy loss experienced in specific ion trajectories through the surface, using coupled-channel calculations to describe inner-shell ionization and excitation as a function of impact parameter. The experimental results indicate that additional broadening contributions arise from surface inhomogeneity and roughness, but for near-normal incident and outgoing trajectories the theory and experiment agree quite well. The calculations show that, even for the ideal two-dimensional silicide phase in which the Y atoms lie just below the surface, significant energy loss arises from interaction of the ions with surrounding Si atoms, leading to a complete loss of intensity at zero energy loss. |
publishDate |
2005 |
dc.date.issued.fl_str_mv |
2005 |
dc.date.accessioned.fl_str_mv |
2014-10-09T02:13:09Z |
dc.type.driver.fl_str_mv |
Estrangeiro info:eu-repo/semantics/article |
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info:eu-repo/semantics/publishedVersion |
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article |
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publishedVersion |
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http://hdl.handle.net/10183/104304 |
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1098-0121 |
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000532908 |
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1098-0121 000532908 |
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http://hdl.handle.net/10183/104304 |
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eng |
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eng |
dc.relation.ispartof.pt_BR.fl_str_mv |
Physical review. B, Condensed matter and materials physics. Woodbury. Vol. 72, no. 7 (Aug. 2005), 075415 10p. |
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