Coulomb heating of channeled C+ and C2+ molecules in Si

Detalhes bibliográficos
Autor(a) principal: Fadanelli Filho, Raul Carlos
Data de Publicação: 2008
Outros Autores: Dias, Johnny Ferraz, Behar, Moni
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/104312
Resumo: Si x-ray and backscattering yields have been measured as a function of the C⁺ and C₂⁺ entrance angle along the Si ‹100› channel in an energy interval between 900 and 2200 keV/atom. A significant enhancement of the x-ray production has been observed for the well-aligned C₂⁺ beam in comparison with the monoatomic case. It is shown that this effect results from the Coulomb explosion of the molecule during the channeling motion. By combining the Rutherford backscattering channeling (RBS-C) and the x-ray results we were able to determine the value of the transverse energy transfer as a function of the beam energy due to the break up process (Coulomb heating). This energy increases monotonically from 14 eV for 900 keV/atom up to 30 eV for 2200 keV/atom. In addition, we were able to predict the theoretical Coulomb heating values by combining calculations and simulations, the theoretical-experimental agreement, within the experimental errors, being quite reasonable.
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spelling Fadanelli Filho, Raul CarlosDias, Johnny FerrazBehar, Moni2014-10-09T02:13:12Z20081050-2947http://hdl.handle.net/10183/104312000684509Si x-ray and backscattering yields have been measured as a function of the C⁺ and C₂⁺ entrance angle along the Si ‹100› channel in an energy interval between 900 and 2200 keV/atom. A significant enhancement of the x-ray production has been observed for the well-aligned C₂⁺ beam in comparison with the monoatomic case. It is shown that this effect results from the Coulomb explosion of the molecule during the channeling motion. By combining the Rutherford backscattering channeling (RBS-C) and the x-ray results we were able to determine the value of the transverse energy transfer as a function of the beam energy due to the break up process (Coulomb heating). This energy increases monotonically from 14 eV for 900 keV/atom up to 30 eV for 2200 keV/atom. In addition, we were able to predict the theoretical Coulomb heating values by combining calculations and simulations, the theoretical-experimental agreement, within the experimental errors, being quite reasonable.application/pdfengPhysical review. A, Atomic, molecular, and optical physics. New York. Vol. 77, no. 5 (May 2008), 052901, 6 p.Física da matéria condensadaRetroespalhamento rutherfordSilícioIons pesadosPerda de energia de particulasCanalizaçãoAglomerados molecularesCoulomb heating of channeled C+ and C2+ molecules in SiEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000684509.pdf000684509.pdfTexto completo (inglês)application/pdf472992http://www.lume.ufrgs.br/bitstream/10183/104312/1/000684509.pdfa7ddc5e5d137e360fabd49af5cea9b22MD51TEXT000684509.pdf.txt000684509.pdf.txtExtracted Texttext/plain32055http://www.lume.ufrgs.br/bitstream/10183/104312/2/000684509.pdf.txtacde4734edd4070ac72fd3bf89292323MD5210183/1043122023-08-19 03:33:30.458029oai:www.lume.ufrgs.br:10183/104312Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2023-08-19T06:33:30Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Coulomb heating of channeled C+ and C2+ molecules in Si
title Coulomb heating of channeled C+ and C2+ molecules in Si
spellingShingle Coulomb heating of channeled C+ and C2+ molecules in Si
Fadanelli Filho, Raul Carlos
Física da matéria condensada
Retroespalhamento rutherford
Silício
Ions pesados
Perda de energia de particulas
Canalização
Aglomerados moleculares
title_short Coulomb heating of channeled C+ and C2+ molecules in Si
title_full Coulomb heating of channeled C+ and C2+ molecules in Si
title_fullStr Coulomb heating of channeled C+ and C2+ molecules in Si
title_full_unstemmed Coulomb heating of channeled C+ and C2+ molecules in Si
title_sort Coulomb heating of channeled C+ and C2+ molecules in Si
author Fadanelli Filho, Raul Carlos
author_facet Fadanelli Filho, Raul Carlos
Dias, Johnny Ferraz
Behar, Moni
author_role author
author2 Dias, Johnny Ferraz
Behar, Moni
author2_role author
author
dc.contributor.author.fl_str_mv Fadanelli Filho, Raul Carlos
Dias, Johnny Ferraz
Behar, Moni
dc.subject.por.fl_str_mv Física da matéria condensada
Retroespalhamento rutherford
Silício
Ions pesados
Perda de energia de particulas
Canalização
Aglomerados moleculares
topic Física da matéria condensada
Retroespalhamento rutherford
Silício
Ions pesados
Perda de energia de particulas
Canalização
Aglomerados moleculares
description Si x-ray and backscattering yields have been measured as a function of the C⁺ and C₂⁺ entrance angle along the Si ‹100› channel in an energy interval between 900 and 2200 keV/atom. A significant enhancement of the x-ray production has been observed for the well-aligned C₂⁺ beam in comparison with the monoatomic case. It is shown that this effect results from the Coulomb explosion of the molecule during the channeling motion. By combining the Rutherford backscattering channeling (RBS-C) and the x-ray results we were able to determine the value of the transverse energy transfer as a function of the beam energy due to the break up process (Coulomb heating). This energy increases monotonically from 14 eV for 900 keV/atom up to 30 eV for 2200 keV/atom. In addition, we were able to predict the theoretical Coulomb heating values by combining calculations and simulations, the theoretical-experimental agreement, within the experimental errors, being quite reasonable.
publishDate 2008
dc.date.issued.fl_str_mv 2008
dc.date.accessioned.fl_str_mv 2014-10-09T02:13:12Z
dc.type.driver.fl_str_mv Estrangeiro
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/104312
dc.identifier.issn.pt_BR.fl_str_mv 1050-2947
dc.identifier.nrb.pt_BR.fl_str_mv 000684509
identifier_str_mv 1050-2947
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dc.language.iso.fl_str_mv eng
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dc.relation.ispartof.pt_BR.fl_str_mv Physical review. A, Atomic, molecular, and optical physics. New York. Vol. 77, no. 5 (May 2008), 052901, 6 p.
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