Stabilization of higher-k tetragonal HfO/sub 2/ by SiO/sub 2/ admixture enabling thermally stable metal-insulator-metal capacitors

• Autor(a) principal: Böscke, Tim S.
• Data de Publicação: 2007
• Outros Autores: Govindarajan, Shrinivas, Kirsch, Paul D., Hung, Puiyee Y., Krug, Cristiano, Lee, Byoung Hun, Heitmann, Johannes, Schröder, Uwe, Pant, Gaurang, Gnade, Bruce E., Krautschneider, Wolfgang
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UFRGS
• Texto Completo: http://hdl.handle.net/10183/141733
• topic: Propriedades dielétricas; Capacitores; Háfnio

The authors report the relationship between HfO2 crystalline phase and the resulting electrical properties. Crystallization of amorphous HfO2 into the monoclinic phase led to a significant increase in leakage current and formation of local defects. Admixture of 10% SiO2 avoided formation of these defects by stabilization of the tetragonal phase, and concurrently increased the permittivity to 35. This understanding enabled fabrication of crystalline HfO2 based metal-insulator-metal capacitors able to withstand a thermal budget of 1000 °C while optimizing capacitance equivalent thickness 1.3 nm at low leakage J 1 V 10−7 A/cm2 .