Environment of hafnium and silicon in Hf-based dielectric films : an atomistic study by x-ray absorption spectroscopy and x-ray diffraction

• Autor(a) principal: Morais, Jonder
• Data de Publicação: 2005
• Outros Autores: Miotti, Leonardo, Bastos, Karen Paz, Teixeira, Sergio Ribeiro, Baumvol, Israel Jacob Rabin, Rotondaro, Antonio L.P., Chambers, James Joseph, Visokay, Mark R., Colombo, Luigi, Alves, Maria do Carmo Martins
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UFRGS
• Texto Completo: http://hdl.handle.net/10183/141313
• topic: Espectroscopia de absorção; Espectroscopia de raio x; Raios X : Difração; Estrutura cristalina; Cristalização; Filmes finos dieletricos; Compostos de silício; Espectros de absorção de raios-x; Difração de raios X; Silício

The atomic structure of HfSiO and HfSiON was investigated before and after thermal annealing using x-ray diffraction and x-ray absorption spectroscopy. In HfSiO, the Hf atoms are arranged in a monoclinic HfO2 structure with Hf as second nearest neighbors, while Si is in a SiO2 environment. Thermal annealing induces crystallization of HfSiO with subtle changes in Hf–Hf distances. In the case of HfSiON, a stable structure is observed around the Hf atoms, which remains unaffected after annealing. Nitrogen is present in the first coordination shell of the Hf atoms, with Si in a SiON environment.