Carrier dynamics in stacked InP/GaAs quantum dots
| Autor(a) principal: | |
|---|---|
| Data de Publicação: | 2007 |
| Outros Autores: | , , , , , , , , , |
| Tipo de documento: | Artigo |
| Idioma: | eng |
| Título da fonte: | Repositório Institucional da UFRGS |
| Texto Completo: | http://hdl.handle.net/10183/141716 |
Resumo: | We investigated two stacked layers of InP/GaAs type-II quantum dots by transmission electron microscopy and optical spectroscopy. The results reveal that InP quantum dots formed in two quantum dot layers are more uniform than those from a single layer structure. The thermal activation energies as well as the photoluminescence decays are rather independent of the separation between quantum dot layers and the presence of the second layer. The quantum dot optical emission persists for thermal activation energy larger than the calculated exciton binding energy. The photoluminescence decay is relatively fast for type-II alignment. |
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Veloso, A.B.Nakaema, Marcelo Kiyoshi KianGodoy, Marcio P.F. deLopes, João Marcelo JordãoLikawa, FernandoBrasil, Maria José Santos PompeuBortoleto, José Roberto RibeiroCotta, Mônica AlonsoFichtner, Paulo Fernando PapaleoMörschbächer, Marcio JoséMadureira, J.R.2016-05-24T02:10:51Z20070003-6951http://hdl.handle.net/10183/141716000616855We investigated two stacked layers of InP/GaAs type-II quantum dots by transmission electron microscopy and optical spectroscopy. The results reveal that InP quantum dots formed in two quantum dot layers are more uniform than those from a single layer structure. The thermal activation energies as well as the photoluminescence decays are rather independent of the separation between quantum dot layers and the presence of the second layer. The quantum dot optical emission persists for thermal activation energy larger than the calculated exciton binding energy. The photoluminescence decay is relatively fast for type-II alignment.application/pdfengApplied physics letters. Vol. 91, no. 12 (Sept. 2007), 121917, 3 p.Arseneto de galioFosfeto de índioPontos quânticosEspectrometria de emissão ópticaCarrier dynamics in stacked InP/GaAs quantum dotsEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000616855.pdf000616855.pdfTexto completo (inglês)application/pdf679510http://www.lume.ufrgs.br/bitstream/10183/141716/1/000616855.pdf4698677d66ca571c82c7b3076a8f8101MD51TEXT000616855.pdf.txt000616855.pdf.txtExtracted Texttext/plain17161http://www.lume.ufrgs.br/bitstream/10183/141716/2/000616855.pdf.txt52f515f49ab69e6f3d3f84731572452aMD52THUMBNAIL000616855.pdf.jpg000616855.pdf.jpgGenerated Thumbnailimage/jpeg2243http://www.lume.ufrgs.br/bitstream/10183/141716/3/000616855.pdf.jpgeeaab743fc4f14149467b404bcfd44f3MD5310183/1417162021-06-13 04:32:09.331309oai:www.lume.ufrgs.br:10183/141716Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2021-06-13T07:32:09Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
| dc.title.pt_BR.fl_str_mv |
Carrier dynamics in stacked InP/GaAs quantum dots |
| title |
Carrier dynamics in stacked InP/GaAs quantum dots |
| spellingShingle |
Carrier dynamics in stacked InP/GaAs quantum dots Veloso, A.B. Arseneto de galio Fosfeto de índio Pontos quânticos Espectrometria de emissão óptica |
| title_short |
Carrier dynamics in stacked InP/GaAs quantum dots |
| title_full |
Carrier dynamics in stacked InP/GaAs quantum dots |
| title_fullStr |
Carrier dynamics in stacked InP/GaAs quantum dots |
| title_full_unstemmed |
Carrier dynamics in stacked InP/GaAs quantum dots |
| title_sort |
Carrier dynamics in stacked InP/GaAs quantum dots |
| author |
Veloso, A.B. |
| author_facet |
Veloso, A.B. Nakaema, Marcelo Kiyoshi Kian Godoy, Marcio P.F. de Lopes, João Marcelo Jordão Likawa, Fernando Brasil, Maria José Santos Pompeu Bortoleto, José Roberto Ribeiro Cotta, Mônica Alonso Fichtner, Paulo Fernando Papaleo Mörschbächer, Marcio José Madureira, J.R. |
| author_role |
author |
| author2 |
Nakaema, Marcelo Kiyoshi Kian Godoy, Marcio P.F. de Lopes, João Marcelo Jordão Likawa, Fernando Brasil, Maria José Santos Pompeu Bortoleto, José Roberto Ribeiro Cotta, Mônica Alonso Fichtner, Paulo Fernando Papaleo Mörschbächer, Marcio José Madureira, J.R. |
| author2_role |
author author author author author author author author author author |
| dc.contributor.author.fl_str_mv |
Veloso, A.B. Nakaema, Marcelo Kiyoshi Kian Godoy, Marcio P.F. de Lopes, João Marcelo Jordão Likawa, Fernando Brasil, Maria José Santos Pompeu Bortoleto, José Roberto Ribeiro Cotta, Mônica Alonso Fichtner, Paulo Fernando Papaleo Mörschbächer, Marcio José Madureira, J.R. |
| dc.subject.por.fl_str_mv |
Arseneto de galio Fosfeto de índio Pontos quânticos Espectrometria de emissão óptica |
| topic |
Arseneto de galio Fosfeto de índio Pontos quânticos Espectrometria de emissão óptica |
| description |
We investigated two stacked layers of InP/GaAs type-II quantum dots by transmission electron microscopy and optical spectroscopy. The results reveal that InP quantum dots formed in two quantum dot layers are more uniform than those from a single layer structure. The thermal activation energies as well as the photoluminescence decays are rather independent of the separation between quantum dot layers and the presence of the second layer. The quantum dot optical emission persists for thermal activation energy larger than the calculated exciton binding energy. The photoluminescence decay is relatively fast for type-II alignment. |
| publishDate |
2007 |
| dc.date.issued.fl_str_mv |
2007 |
| dc.date.accessioned.fl_str_mv |
2016-05-24T02:10:51Z |
| dc.type.driver.fl_str_mv |
Estrangeiro info:eu-repo/semantics/article |
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info:eu-repo/semantics/publishedVersion |
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article |
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publishedVersion |
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http://hdl.handle.net/10183/141716 |
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0003-6951 |
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000616855 |
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0003-6951 000616855 |
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http://hdl.handle.net/10183/141716 |
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eng |
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eng |
| dc.relation.ispartof.pt_BR.fl_str_mv |
Applied physics letters. Vol. 91, no. 12 (Sept. 2007), 121917, 3 p. |
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info:eu-repo/semantics/openAccess |
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openAccess |
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