Transport properties of silicon implanted with bismuth

• Autor(a) principal: Abramof, Eduardo G.
• Data de Publicação: 1997
• Outros Autores: Silva, Antonio Ferreira da, Sernelius, Bo E., Souza, Joel Pereira de, Boudinov, Henri Ivanov
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UFRGS
• Texto Completo: http://hdl.handle.net/10183/104223
• topic: Física da matéria condensada; Silício; Semicondutores

The Hall effect and resistivity of Si:Bi with donor concentration varying from 3.0X1017 to 1.4X1020 cm-3 were measured from room temperature down to 13 K. The samples were prepared by Bi1 implantation in Van der Pauw structures delineated in Si chips. The measured resistivities were compared with the ones calculated by a generalized Drude approach at similar temperatures and doping concentration, presenting fairly good agreement. The critical impurity concentration Nc of the metal-nonmetal transition was measured to be around 2X1019 cm-3. The critical concentration Nc was calculated by comparing the ionization energy of the insulating phase with the total energy of the metallic phase. This value of Nc agreed very well with the one obtained experimentally and the values estimated from other theoretical approaches.