A hole inversion layer at the BiVO4/Bi4V2O11 interface produces a high tunable photovoltage for water splitting

• Autor(a) principal: Santos, Wayler S. dos [UFVJM]
• Data de Publicação: 2016
• Outros Autores: Rodriguez, Mariandry [UFVJM], Afonso, Andr? S. [UFVJM], Mesquita, Jo?o P. [UFVJM], Nascimento, Lucas L., Patroc?nio, Ant?nio O. T., Silva, Adilson C., Oliveira, Luiz C. A., Fabris, Jos? D. [UFVJM], Pereira, M?rcio C. [UFVJM]
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UFVJM
• Texto Completo: http://acervo.ufvjm.edu.br/jspui/handle/1/1579

The conversion of solar energy into hydrogen fuel by splitting water into photoelectrochemical cells (PEC) is an appealing strategy to store energy and minimize the extensive use of fossil fuels. The key requirement for efficient water splitting is producing a large band bending (photovoltage) at the semiconductor to improve the separation of the photogenerated charge carriers. Therefore, an attractive method consists in creating internal electrical fields inside the PEC to render more favorable band bending for water splitting. Coupling ferroelectric materials exhibiting spontaneous polarization with visible light photoactive semiconductors can be a likely approach to getting higher photovoltage outputs. The spontaneous electric polarization tends to promote the desirable separation of photogenerated electron- hole pairs and can produce photovoltages higher than that obtained from a conventional p-n heterojunction. Herein, we demonstrate that a hole inversion layer induced by a ferroelectric Bi4V2O11 perovskite at the n-type BiVO4 interface creates a virtual p-n junction with high photovoltage, which is suitable for water splitting. The photovoltage output can be boosted by changing the polarization by doping the ferroelectric material with tungsten in order to produce the relatively large photovoltage of 1.39?V, decreasing the surface recombination and enhancing the photocurrent as much as 180%.