Effect of argon ion bombardment on amorphous silicon carbonitride films
Autor(a) principal: | |
---|---|
Data de Publicação: | 2014 |
Outros Autores: | , , , , , , , , , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1088/1742-6596/480/1/012021 http://hdl.handle.net/11449/111599 |
Resumo: | Amorphous silicon carbonitride (a-SiCN:H) films were synthesized by radiofrequency (RF) Plasma Enhanced Vapor Chemical Deposition (PECVD) using hexamethyldisilazane (HMDSN) as precursor compound. Then, the films were post-treated by Plasma Immersion Ion Implantation (PIII) in argon atmosphere from 15 to 60 min The hardness of the film enhanced after ion implantation, and the sample treated at 45 min process showed hardness greater than sixfold that of the untreated sample. This result is explained by the crosslinking and densification of the structure Films were exposed to oxygen plasma for determining of the etching rate. It decreased monotonically from 33 angstrom/min to 19 angstrom/min for the range of process time, confirming structural alterations. Hydrophobic character of the a-SiCN:H films were modified immediately after ion bombardment, due to incorporation of polar groups. However, the high wettability of the films acquired by the ion implantation was diminished after aging in air. Therefore, argon PIII made a-SiCN.H films mechanically more resistant and altered their hydrophobic character. |
id |
UNSP_46289033df27bf08d826be04b4cebde5 |
---|---|
oai_identifier_str |
oai:repositorio.unesp.br:11449/111599 |
network_acronym_str |
UNSP |
network_name_str |
Repositório Institucional da UNESP |
repository_id_str |
2946 |
spelling |
Effect of argon ion bombardment on amorphous silicon carbonitride filmsAmorphous silicon carbonitride (a-SiCN:H) films were synthesized by radiofrequency (RF) Plasma Enhanced Vapor Chemical Deposition (PECVD) using hexamethyldisilazane (HMDSN) as precursor compound. Then, the films were post-treated by Plasma Immersion Ion Implantation (PIII) in argon atmosphere from 15 to 60 min The hardness of the film enhanced after ion implantation, and the sample treated at 45 min process showed hardness greater than sixfold that of the untreated sample. This result is explained by the crosslinking and densification of the structure Films were exposed to oxygen plasma for determining of the etching rate. It decreased monotonically from 33 angstrom/min to 19 angstrom/min for the range of process time, confirming structural alterations. Hydrophobic character of the a-SiCN:H films were modified immediately after ion bombardment, due to incorporation of polar groups. However, the high wettability of the films acquired by the ion implantation was diminished after aging in air. Therefore, argon PIII made a-SiCN.H films mechanically more resistant and altered their hydrophobic character.UNESP, Fac Engn, BR-12516410 Guaratingueta, SP, BrazilUNESP, Fac Engn, BR-12516410 Guaratingueta, SP, BrazilIop Publishing LtdUniversidade Estadual Paulista (Unesp)Batocki, R. G. S. [UNESP]Mota, R. P. [UNESP]Honda, R. Y. [UNESP]Santos, D. C. R.Aguiar, J. A.Vargas, CAPTellez, DALNBohorquez, LTCShanenko, A.Jardim, R. F.Peeters, F.2014-12-03T13:08:47Z2014-12-03T13:08:47Z2014-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject5application/pdfhttp://dx.doi.org/10.1088/1742-6596/480/1/01202121st Latin American Symposium On Solid State Physics (slafes Xxi). Bristol: Iop Publishing Ltd, v. 480, 5 p., 2014.1742-6588http://hdl.handle.net/11449/11159910.1088/1742-6596/480/1/012021WOS:000336025500021WOS000336025500021.pdfWeb of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng21st Latin American Symposium On Solid State Physics (slafes Xxi)0,241info:eu-repo/semantics/openAccess2023-10-21T06:03:31Zoai:repositorio.unesp.br:11449/111599Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462023-10-21T06:03:31Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Effect of argon ion bombardment on amorphous silicon carbonitride films |
title |
Effect of argon ion bombardment on amorphous silicon carbonitride films |
spellingShingle |
Effect of argon ion bombardment on amorphous silicon carbonitride films Batocki, R. G. S. [UNESP] |
title_short |
Effect of argon ion bombardment on amorphous silicon carbonitride films |
title_full |
Effect of argon ion bombardment on amorphous silicon carbonitride films |
title_fullStr |
Effect of argon ion bombardment on amorphous silicon carbonitride films |
title_full_unstemmed |
Effect of argon ion bombardment on amorphous silicon carbonitride films |
title_sort |
Effect of argon ion bombardment on amorphous silicon carbonitride films |
author |
Batocki, R. G. S. [UNESP] |
author_facet |
Batocki, R. G. S. [UNESP] Mota, R. P. [UNESP] Honda, R. Y. [UNESP] Santos, D. C. R. Aguiar, J. A. Vargas, CAP Tellez, DALN Bohorquez, LTC Shanenko, A. Jardim, R. F. Peeters, F. |
author_role |
author |
author2 |
Mota, R. P. [UNESP] Honda, R. Y. [UNESP] Santos, D. C. R. Aguiar, J. A. Vargas, CAP Tellez, DALN Bohorquez, LTC Shanenko, A. Jardim, R. F. Peeters, F. |
author2_role |
author author author author author author author author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (Unesp) |
dc.contributor.author.fl_str_mv |
Batocki, R. G. S. [UNESP] Mota, R. P. [UNESP] Honda, R. Y. [UNESP] Santos, D. C. R. Aguiar, J. A. Vargas, CAP Tellez, DALN Bohorquez, LTC Shanenko, A. Jardim, R. F. Peeters, F. |
description |
Amorphous silicon carbonitride (a-SiCN:H) films were synthesized by radiofrequency (RF) Plasma Enhanced Vapor Chemical Deposition (PECVD) using hexamethyldisilazane (HMDSN) as precursor compound. Then, the films were post-treated by Plasma Immersion Ion Implantation (PIII) in argon atmosphere from 15 to 60 min The hardness of the film enhanced after ion implantation, and the sample treated at 45 min process showed hardness greater than sixfold that of the untreated sample. This result is explained by the crosslinking and densification of the structure Films were exposed to oxygen plasma for determining of the etching rate. It decreased monotonically from 33 angstrom/min to 19 angstrom/min for the range of process time, confirming structural alterations. Hydrophobic character of the a-SiCN:H films were modified immediately after ion bombardment, due to incorporation of polar groups. However, the high wettability of the films acquired by the ion implantation was diminished after aging in air. Therefore, argon PIII made a-SiCN.H films mechanically more resistant and altered their hydrophobic character. |
publishDate |
2014 |
dc.date.none.fl_str_mv |
2014-12-03T13:08:47Z 2014-12-03T13:08:47Z 2014-01-01 |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1088/1742-6596/480/1/012021 21st Latin American Symposium On Solid State Physics (slafes Xxi). Bristol: Iop Publishing Ltd, v. 480, 5 p., 2014. 1742-6588 http://hdl.handle.net/11449/111599 10.1088/1742-6596/480/1/012021 WOS:000336025500021 WOS000336025500021.pdf |
url |
http://dx.doi.org/10.1088/1742-6596/480/1/012021 http://hdl.handle.net/11449/111599 |
identifier_str_mv |
21st Latin American Symposium On Solid State Physics (slafes Xxi). Bristol: Iop Publishing Ltd, v. 480, 5 p., 2014. 1742-6588 10.1088/1742-6596/480/1/012021 WOS:000336025500021 WOS000336025500021.pdf |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
21st Latin American Symposium On Solid State Physics (slafes Xxi) 0,241 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
5 application/pdf |
dc.publisher.none.fl_str_mv |
Iop Publishing Ltd |
publisher.none.fl_str_mv |
Iop Publishing Ltd |
dc.source.none.fl_str_mv |
Web of Science reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1797789459688718336 |