Ga-Modified Nanostructured ZnO: Characterization and Application in Dye-Sensitized Solar Cells

• Autor(a) principal: Goncalves, Agnaldo S. [UNESP]
• Data de Publicação: 2008
• Outros Autores: Nogueira, Ana F., Davolos, Marian Rosaly [UNESP], Masaki, Naruhiko, Yanagida, Shozo, Antonio, Selma G. [UNESP], Paiva-Santos, Carlos O. [UNESP]
• Tipo de documento: Artigo de conferência
• Idioma: eng
• Título da fonte: Repositório Institucional da UNESP
• Texto Completo: http://dx.doi.org/10.4028/www.scientific.net/MSF.591-593.13; http://hdl.handle.net/11449/41579
• topic: DSSC; nanostructured films; ZnO:Ga; GZO

ZnO has received great attention in many applications due to its electronic and optical properties. We report on the preparation of ZnO and gallium-containing ZnO (ZnO:Ga) nanoparticles by the precipitation method. The nanoparticles have the wurtzite structure and a high crystallinity. Gallium ions are present as Ga(3+), as evidenced by the binding energies through XPS. Porosity and surface area of the powder increased under increasing gallium level, explained by the smaller particle size of ZnO:Ga samples compared with ZnO. The estimated optical band gap of ZnO was 3.2 eV, comparable to ZnO:Ga.