Investigation on the optical and electrical properties of undoped and Sb-doped SnO2 nanowires obtained by the VLS method

Detalhes bibliográficos
Autor(a) principal: Costa, I. M. [UNESP]
Data de Publicação: 2021
Outros Autores: Cunha, T. R., Cichetto, L., Zaghete, M. A. [UNESP], Chiquito, A. J.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1016/j.physe.2021.114856
http://hdl.handle.net/11449/221896
Resumo: In this work, we report the effects of Sb doping on the optical and electrical properties of the SnO2 nanowires obtained by the vapor-liquid-solid (VLS) method. The absorption edges were found to be 3.30 eV and 3.66 eV for undoped SnO2 and Sb-doped SnO2 (ATO) nanowires, respectively. The energy shift was related to the Burstein-Moss effect taking place in the doped nanowires. We studied the ATO optical bandgap (ΔE = 0.36 eV) shift as a function of carrier concentration. The incorporation of Sb caused the resistivity to decrease three orders of magnitude for single-nanowire ATO devices. In addition, it was found that undoped SnO2 nanowires exhibit semiconductor characteristics while a metal-insulator transition (MIT), around 170 K, was observed in the ATO nanowires.
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spelling Investigation on the optical and electrical properties of undoped and Sb-doped SnO2 nanowires obtained by the VLS methodATOBurstein-Moss shiftMetal-insulator transitionNanowiresSingle-nanowire deviceTin dioxideIn this work, we report the effects of Sb doping on the optical and electrical properties of the SnO2 nanowires obtained by the vapor-liquid-solid (VLS) method. The absorption edges were found to be 3.30 eV and 3.66 eV for undoped SnO2 and Sb-doped SnO2 (ATO) nanowires, respectively. The energy shift was related to the Burstein-Moss effect taking place in the doped nanowires. We studied the ATO optical bandgap (ΔE = 0.36 eV) shift as a function of carrier concentration. The incorporation of Sb caused the resistivity to decrease three orders of magnitude for single-nanowire ATO devices. In addition, it was found that undoped SnO2 nanowires exhibit semiconductor characteristics while a metal-insulator transition (MIT), around 170 K, was observed in the ATO nanowires.Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)LIEC Instituto de Química Universidade Estadual Paulista - UNESPDepartamento de Física Universidade Federal de São CarlosLIEC Instituto de Química Universidade Estadual Paulista - UNESPCNPq: 150856/2019–9FAPESP: 2013/07296–2FAPESP: 2014/01371–5FAPESP: 2017/23663–6FAPESP: 2019/12383–8CNPq: 305656/2018–0Universidade Estadual Paulista (UNESP)Universidade Federal de São Carlos (UFSCar)Costa, I. M. [UNESP]Cunha, T. R.Cichetto, L.Zaghete, M. A. [UNESP]Chiquito, A. J.2022-04-28T19:41:07Z2022-04-28T19:41:07Z2021-10-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://dx.doi.org/10.1016/j.physe.2021.114856Physica E: Low-Dimensional Systems and Nanostructures, v. 134.1386-9477http://hdl.handle.net/11449/22189610.1016/j.physe.2021.1148562-s2.0-85109110746Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengPhysica E: Low-Dimensional Systems and Nanostructuresinfo:eu-repo/semantics/openAccess2022-04-28T19:41:07Zoai:repositorio.unesp.br:11449/221896Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462022-04-28T19:41:07Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Investigation on the optical and electrical properties of undoped and Sb-doped SnO2 nanowires obtained by the VLS method
title Investigation on the optical and electrical properties of undoped and Sb-doped SnO2 nanowires obtained by the VLS method
spellingShingle Investigation on the optical and electrical properties of undoped and Sb-doped SnO2 nanowires obtained by the VLS method
Costa, I. M. [UNESP]
ATO
Burstein-Moss shift
Metal-insulator transition
Nanowires
Single-nanowire device
Tin dioxide
title_short Investigation on the optical and electrical properties of undoped and Sb-doped SnO2 nanowires obtained by the VLS method
title_full Investigation on the optical and electrical properties of undoped and Sb-doped SnO2 nanowires obtained by the VLS method
title_fullStr Investigation on the optical and electrical properties of undoped and Sb-doped SnO2 nanowires obtained by the VLS method
title_full_unstemmed Investigation on the optical and electrical properties of undoped and Sb-doped SnO2 nanowires obtained by the VLS method
title_sort Investigation on the optical and electrical properties of undoped and Sb-doped SnO2 nanowires obtained by the VLS method
author Costa, I. M. [UNESP]
author_facet Costa, I. M. [UNESP]
Cunha, T. R.
Cichetto, L.
Zaghete, M. A. [UNESP]
Chiquito, A. J.
author_role author
author2 Cunha, T. R.
Cichetto, L.
Zaghete, M. A. [UNESP]
Chiquito, A. J.
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (UNESP)
Universidade Federal de São Carlos (UFSCar)
dc.contributor.author.fl_str_mv Costa, I. M. [UNESP]
Cunha, T. R.
Cichetto, L.
Zaghete, M. A. [UNESP]
Chiquito, A. J.
dc.subject.por.fl_str_mv ATO
Burstein-Moss shift
Metal-insulator transition
Nanowires
Single-nanowire device
Tin dioxide
topic ATO
Burstein-Moss shift
Metal-insulator transition
Nanowires
Single-nanowire device
Tin dioxide
description In this work, we report the effects of Sb doping on the optical and electrical properties of the SnO2 nanowires obtained by the vapor-liquid-solid (VLS) method. The absorption edges were found to be 3.30 eV and 3.66 eV for undoped SnO2 and Sb-doped SnO2 (ATO) nanowires, respectively. The energy shift was related to the Burstein-Moss effect taking place in the doped nanowires. We studied the ATO optical bandgap (ΔE = 0.36 eV) shift as a function of carrier concentration. The incorporation of Sb caused the resistivity to decrease three orders of magnitude for single-nanowire ATO devices. In addition, it was found that undoped SnO2 nanowires exhibit semiconductor characteristics while a metal-insulator transition (MIT), around 170 K, was observed in the ATO nanowires.
publishDate 2021
dc.date.none.fl_str_mv 2021-10-01
2022-04-28T19:41:07Z
2022-04-28T19:41:07Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1016/j.physe.2021.114856
Physica E: Low-Dimensional Systems and Nanostructures, v. 134.
1386-9477
http://hdl.handle.net/11449/221896
10.1016/j.physe.2021.114856
2-s2.0-85109110746
url http://dx.doi.org/10.1016/j.physe.2021.114856
http://hdl.handle.net/11449/221896
identifier_str_mv Physica E: Low-Dimensional Systems and Nanostructures, v. 134.
1386-9477
10.1016/j.physe.2021.114856
2-s2.0-85109110746
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Physica E: Low-Dimensional Systems and Nanostructures
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1797790101323907072

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