Imprint behavior and polarization relaxation of PLZT thin films

Detalhes bibliográficos
Autor(a) principal: Araujo, E. B. [UNESP]
Data de Publicação: 2018
Outros Autores: Melo, M. [UNESP], Ivanov, M., Shur, V. Ya., Kholkin, A. L.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1080/00150193.2018.1470821
http://hdl.handle.net/11449/185482
Resumo: Thickness dependence of imprint and polarization dynamics of Pb1-xLax(Zr1-yTiy)(1-x/4)O-3 (PLZT) thin films is reported in this work. Asymmetries in the histograms of the local piezoresponse reveal an imprint effect in the studied films whose origin could be associated to Schottky barriers near the film-substrate interface. Time-resolved spectroscopic measurements shows that the local polarization relaxation follows the exponential dependence . A maximum relaxation time approximate to 2.18s was observed for the 350nm thick film. A similar thickness dependence between grain size, correlation length () and relaxation time () suggest an intrinsic relationship between them.
id UNSP_78344e2ef20922b5a71dc44914b72c0f
oai_identifier_str oai:repositorio.unesp.br:11449/185482
network_acronym_str UNSP
network_name_str Repositório Institucional da UNESP
repository_id_str 2946
spelling Imprint behavior and polarization relaxation of PLZT thin filmsPLZTpolarization relaxationthin filmsThickness dependence of imprint and polarization dynamics of Pb1-xLax(Zr1-yTiy)(1-x/4)O-3 (PLZT) thin films is reported in this work. Asymmetries in the histograms of the local piezoresponse reveal an imprint effect in the studied films whose origin could be associated to Schottky barriers near the film-substrate interface. Time-resolved spectroscopic measurements shows that the local polarization relaxation follows the exponential dependence . A maximum relaxation time approximate to 2.18s was observed for the 350nm thick film. A similar thickness dependence between grain size, correlation length () and relaxation time () suggest an intrinsic relationship between them.Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Government of the Russian FederationProject CICECO-Aveiro Institute of Materials - national funds through the FCT/MECFEDER under the PT2020 Partnership AgreementSao Paulo State Univ, Dept Phys & Chem, Ilha Solteira, SP, BrazilUniv Aveiro, Dept Mat & Ceram Engn, Aveiro, PortugalUniv Aveiro, CICECO, Aveiro, PortugalUral Fed Univ, Inst Nat Sci, Ekaterinburg, RussiaSao Paulo State Univ, Dept Phys & Chem, Ilha Solteira, SP, BrazilCNPq: 304604/2015-1CNPq: 400677/2014-8Government of the Russian Federation: 16-02-00821-aGovernment of the Russian Federation: 02. A03.21.0006Project CICECO-Aveiro Institute of Materials - national funds through the FCT/MEC: FCT UID/CTM/50011/2013CNPq: 232241/2014-7Taylor & Francis LtdUniversidade Estadual Paulista (Unesp)Univ AveiroUral Fed UnivAraujo, E. B. [UNESP]Melo, M. [UNESP]Ivanov, M.Shur, V. Ya.Kholkin, A. L.2019-10-04T12:35:55Z2019-10-04T12:35:55Z2018-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article10-18http://dx.doi.org/10.1080/00150193.2018.1470821Ferroelectrics. Abingdon: Taylor & Francis Ltd, v. 533, n. 1, p. 10-18, 2018.0015-0193http://hdl.handle.net/11449/18548210.1080/00150193.2018.1470821WOS:000459872300003Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengFerroelectricsinfo:eu-repo/semantics/openAccess2021-10-22T21:09:51Zoai:repositorio.unesp.br:11449/185482Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462021-10-22T21:09:51Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Imprint behavior and polarization relaxation of PLZT thin films
title Imprint behavior and polarization relaxation of PLZT thin films
spellingShingle Imprint behavior and polarization relaxation of PLZT thin films
Araujo, E. B. [UNESP]
PLZT
polarization relaxation
thin films
title_short Imprint behavior and polarization relaxation of PLZT thin films
title_full Imprint behavior and polarization relaxation of PLZT thin films
title_fullStr Imprint behavior and polarization relaxation of PLZT thin films
title_full_unstemmed Imprint behavior and polarization relaxation of PLZT thin films
title_sort Imprint behavior and polarization relaxation of PLZT thin films
author Araujo, E. B. [UNESP]
author_facet Araujo, E. B. [UNESP]
Melo, M. [UNESP]
Ivanov, M.
Shur, V. Ya.
Kholkin, A. L.
author_role author
author2 Melo, M. [UNESP]
Ivanov, M.
Shur, V. Ya.
Kholkin, A. L.
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (Unesp)
Univ Aveiro
Ural Fed Univ
dc.contributor.author.fl_str_mv Araujo, E. B. [UNESP]
Melo, M. [UNESP]
Ivanov, M.
Shur, V. Ya.
Kholkin, A. L.
dc.subject.por.fl_str_mv PLZT
polarization relaxation
thin films
topic PLZT
polarization relaxation
thin films
description Thickness dependence of imprint and polarization dynamics of Pb1-xLax(Zr1-yTiy)(1-x/4)O-3 (PLZT) thin films is reported in this work. Asymmetries in the histograms of the local piezoresponse reveal an imprint effect in the studied films whose origin could be associated to Schottky barriers near the film-substrate interface. Time-resolved spectroscopic measurements shows that the local polarization relaxation follows the exponential dependence . A maximum relaxation time approximate to 2.18s was observed for the 350nm thick film. A similar thickness dependence between grain size, correlation length () and relaxation time () suggest an intrinsic relationship between them.
publishDate 2018
dc.date.none.fl_str_mv 2018-01-01
2019-10-04T12:35:55Z
2019-10-04T12:35:55Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1080/00150193.2018.1470821
Ferroelectrics. Abingdon: Taylor & Francis Ltd, v. 533, n. 1, p. 10-18, 2018.
0015-0193
http://hdl.handle.net/11449/185482
10.1080/00150193.2018.1470821
WOS:000459872300003
url http://dx.doi.org/10.1080/00150193.2018.1470821
http://hdl.handle.net/11449/185482
identifier_str_mv Ferroelectrics. Abingdon: Taylor & Francis Ltd, v. 533, n. 1, p. 10-18, 2018.
0015-0193
10.1080/00150193.2018.1470821
WOS:000459872300003
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Ferroelectrics
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 10-18
dc.publisher.none.fl_str_mv Taylor & Francis Ltd
publisher.none.fl_str_mv Taylor & Francis Ltd
dc.source.none.fl_str_mv Web of Science
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1797789751866032128

Registros relacionados