Sign of the dominant charge carriers in photorefractive crystals determined by a phase-locked holographic technique
Autor(a) principal: | |
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Data de Publicação: | 2015 |
Outros Autores: | , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1016/j.optmat.2015.08.007 http://hdl.handle.net/11449/172018 |
Resumo: | This work presents a holographic method based on active feedback techniques for determining the sign of the dominant charge carriers in photorefractive materials. A two-step procedure is proposed: first off a stationary phase-locked hologram is recorded; an electric field normal to the grating layers is then applied to the material, thus producing a running hologram. The sign of the charge carriers is determined by comparing the direction of the applied field with the direction of the hologram movement, which is known through the automatically attached light pattern. The method can be applied from highly photoconductive to highly insulating materials. Furthermore, no information on any material parameter is required. The method is validated by a set of holographic experiments using a Bi<inf>12</inf>TiO<inf>20</inf> crystal that has electrons as the majority photocarriers. |
id |
UNSP_8100768de66ea5ea4c06fcc84aab5767 |
---|---|
oai_identifier_str |
oai:repositorio.unesp.br:11449/172018 |
network_acronym_str |
UNSP |
network_name_str |
Repositório Institucional da UNESP |
repository_id_str |
2946 |
spelling |
Sign of the dominant charge carriers in photorefractive crystals determined by a phase-locked holographic techniqueCharge carrierFeedback systemHologramPhase controlPhotoconductivityPhotorefractiveThis work presents a holographic method based on active feedback techniques for determining the sign of the dominant charge carriers in photorefractive materials. A two-step procedure is proposed: first off a stationary phase-locked hologram is recorded; an electric field normal to the grating layers is then applied to the material, thus producing a running hologram. The sign of the charge carriers is determined by comparing the direction of the applied field with the direction of the hologram movement, which is known through the automatically attached light pattern. The method can be applied from highly photoconductive to highly insulating materials. Furthermore, no information on any material parameter is required. The method is validated by a set of holographic experiments using a Bi<inf>12</inf>TiO<inf>20</inf> crystal that has electrons as the majority photocarriers.UFABC - Univ Federal Do ABC, Centro de Engenharia (CECS), Avenida dos Estados 5001UNESP, Univ Estadual Paulista, Departamento de Física (IGCE), Caixa Postal 178UNESP, Univ Estadual Paulista, Departamento de Física (IGCE), Caixa Postal 178Universidade Federal do ABC (UFABC)Universidade Estadual Paulista (Unesp)Freschi, A. A.Callegari, F. A.De Vicente, F. S. [UNESP]Gesualdi, M. R.R.2018-12-11T16:58:09Z2018-12-11T16:58:09Z2015-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article247-251application/pdfhttp://dx.doi.org/10.1016/j.optmat.2015.08.007Optical Materials, v. 48, p. 247-251.0925-3467http://hdl.handle.net/11449/17201810.1016/j.optmat.2015.08.0072-s2.0-849400370282-s2.0-84940037028.pdfScopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengOptical Materials0,592info:eu-repo/semantics/openAccess2023-12-30T06:14:22Zoai:repositorio.unesp.br:11449/172018Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462023-12-30T06:14:22Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Sign of the dominant charge carriers in photorefractive crystals determined by a phase-locked holographic technique |
title |
Sign of the dominant charge carriers in photorefractive crystals determined by a phase-locked holographic technique |
spellingShingle |
Sign of the dominant charge carriers in photorefractive crystals determined by a phase-locked holographic technique Freschi, A. A. Charge carrier Feedback system Hologram Phase control Photoconductivity Photorefractive |
title_short |
Sign of the dominant charge carriers in photorefractive crystals determined by a phase-locked holographic technique |
title_full |
Sign of the dominant charge carriers in photorefractive crystals determined by a phase-locked holographic technique |
title_fullStr |
Sign of the dominant charge carriers in photorefractive crystals determined by a phase-locked holographic technique |
title_full_unstemmed |
Sign of the dominant charge carriers in photorefractive crystals determined by a phase-locked holographic technique |
title_sort |
Sign of the dominant charge carriers in photorefractive crystals determined by a phase-locked holographic technique |
author |
Freschi, A. A. |
author_facet |
Freschi, A. A. Callegari, F. A. De Vicente, F. S. [UNESP] Gesualdi, M. R.R. |
author_role |
author |
author2 |
Callegari, F. A. De Vicente, F. S. [UNESP] Gesualdi, M. R.R. |
author2_role |
author author author |
dc.contributor.none.fl_str_mv |
Universidade Federal do ABC (UFABC) Universidade Estadual Paulista (Unesp) |
dc.contributor.author.fl_str_mv |
Freschi, A. A. Callegari, F. A. De Vicente, F. S. [UNESP] Gesualdi, M. R.R. |
dc.subject.por.fl_str_mv |
Charge carrier Feedback system Hologram Phase control Photoconductivity Photorefractive |
topic |
Charge carrier Feedback system Hologram Phase control Photoconductivity Photorefractive |
description |
This work presents a holographic method based on active feedback techniques for determining the sign of the dominant charge carriers in photorefractive materials. A two-step procedure is proposed: first off a stationary phase-locked hologram is recorded; an electric field normal to the grating layers is then applied to the material, thus producing a running hologram. The sign of the charge carriers is determined by comparing the direction of the applied field with the direction of the hologram movement, which is known through the automatically attached light pattern. The method can be applied from highly photoconductive to highly insulating materials. Furthermore, no information on any material parameter is required. The method is validated by a set of holographic experiments using a Bi<inf>12</inf>TiO<inf>20</inf> crystal that has electrons as the majority photocarriers. |
publishDate |
2015 |
dc.date.none.fl_str_mv |
2015-01-01 2018-12-11T16:58:09Z 2018-12-11T16:58:09Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1016/j.optmat.2015.08.007 Optical Materials, v. 48, p. 247-251. 0925-3467 http://hdl.handle.net/11449/172018 10.1016/j.optmat.2015.08.007 2-s2.0-84940037028 2-s2.0-84940037028.pdf |
url |
http://dx.doi.org/10.1016/j.optmat.2015.08.007 http://hdl.handle.net/11449/172018 |
identifier_str_mv |
Optical Materials, v. 48, p. 247-251. 0925-3467 10.1016/j.optmat.2015.08.007 2-s2.0-84940037028 2-s2.0-84940037028.pdf |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Optical Materials 0,592 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
247-251 application/pdf |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1797790147711860736 |