On the reproducibility of spray-coated ZnO thin-film transistors

Detalhes bibliográficos
Autor(a) principal: Lima, Guilherme R. [UNESP]
Data de Publicação: 2020
Outros Autores: Braga, Joao P. [UNESP], Gozzi, Giovani [UNESP], Fugikawa-Santos, Lucas [UNESP]
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1557/adv.2020.199
http://hdl.handle.net/11449/197099
Resumo: Recent studies have shown spray-pyrolysis is a low-cost, simple and efficient technique for deposition of metal oxide semiconductors (such as zinc oxide) as the active layer of thin-film transistors (TFTs). However, to allow the translation from laboratory scale to industry the reproducibility of such method needs to be evaluated. We present herein a representative study concerning the reproducibility and uniformity of spray-coated ZnO TFTs using several devices, from different production batches, following the same fabrication protocol. We demonstrate that it is possible to obtain transistors with high performance and reproducibility by controlling the most relevant deposition factors, corroborated by a low deviation rate (below 10%) from the characteristic TFT parameters (mobility in saturation, threshold voltage and on/off ratio), which is compatible to commonly available commercial electronic devices.
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spelling On the reproducibility of spray-coated ZnO thin-film transistorsthin filmspray pyrolysissolution depositionsemiconductingRecent studies have shown spray-pyrolysis is a low-cost, simple and efficient technique for deposition of metal oxide semiconductors (such as zinc oxide) as the active layer of thin-film transistors (TFTs). However, to allow the translation from laboratory scale to industry the reproducibility of such method needs to be evaluated. We present herein a representative study concerning the reproducibility and uniformity of spray-coated ZnO TFTs using several devices, from different production batches, following the same fabrication protocol. We demonstrate that it is possible to obtain transistors with high performance and reproducibility by controlling the most relevant deposition factors, corroborated by a low deviation rate (below 10%) from the characteristic TFT parameters (mobility in saturation, threshold voltage and on/off ratio), which is compatible to commonly available commercial electronic devices.Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Sao Paulo State Univ UNESP, Phys Dept IBILCE, BR-15054000 Sao Jose Do Rio Preto, SP, BrazilSao Paulo State Univ UNESP, Phys Dept IGCE, Av 24A,1515, BR-13506900 Rio Claro, SP, BrazilSao Paulo State Univ UNESP, Phys Dept IBILCE, BR-15054000 Sao Jose Do Rio Preto, SP, BrazilSao Paulo State Univ UNESP, Phys Dept IGCE, Av 24A,1515, BR-13506900 Rio Claro, SP, BrazilFAPESP: 2019/08019-9CAPES: 001Cambridge Univ PressUniversidade Estadual Paulista (Unesp)Lima, Guilherme R. [UNESP]Braga, Joao P. [UNESP]Gozzi, Giovani [UNESP]Fugikawa-Santos, Lucas [UNESP]2020-12-10T20:06:07Z2020-12-10T20:06:07Z2020-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article1859-1866http://dx.doi.org/10.1557/adv.2020.199Mrs Advances. New York: Cambridge Univ Press, v. 5, n. 35-36, p. 1859-1866, 2020.2059-8521http://hdl.handle.net/11449/19709910.1557/adv.2020.199WOS:000551135800006Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengMrs Advancesinfo:eu-repo/semantics/openAccess2021-10-23T11:33:11Zoai:repositorio.unesp.br:11449/197099Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462021-10-23T11:33:11Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv On the reproducibility of spray-coated ZnO thin-film transistors
title On the reproducibility of spray-coated ZnO thin-film transistors
spellingShingle On the reproducibility of spray-coated ZnO thin-film transistors
Lima, Guilherme R. [UNESP]
thin film
spray pyrolysis
solution deposition
semiconducting
title_short On the reproducibility of spray-coated ZnO thin-film transistors
title_full On the reproducibility of spray-coated ZnO thin-film transistors
title_fullStr On the reproducibility of spray-coated ZnO thin-film transistors
title_full_unstemmed On the reproducibility of spray-coated ZnO thin-film transistors
title_sort On the reproducibility of spray-coated ZnO thin-film transistors
author Lima, Guilherme R. [UNESP]
author_facet Lima, Guilherme R. [UNESP]
Braga, Joao P. [UNESP]
Gozzi, Giovani [UNESP]
Fugikawa-Santos, Lucas [UNESP]
author_role author
author2 Braga, Joao P. [UNESP]
Gozzi, Giovani [UNESP]
Fugikawa-Santos, Lucas [UNESP]
author2_role author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv Lima, Guilherme R. [UNESP]
Braga, Joao P. [UNESP]
Gozzi, Giovani [UNESP]
Fugikawa-Santos, Lucas [UNESP]
dc.subject.por.fl_str_mv thin film
spray pyrolysis
solution deposition
semiconducting
topic thin film
spray pyrolysis
solution deposition
semiconducting
description Recent studies have shown spray-pyrolysis is a low-cost, simple and efficient technique for deposition of metal oxide semiconductors (such as zinc oxide) as the active layer of thin-film transistors (TFTs). However, to allow the translation from laboratory scale to industry the reproducibility of such method needs to be evaluated. We present herein a representative study concerning the reproducibility and uniformity of spray-coated ZnO TFTs using several devices, from different production batches, following the same fabrication protocol. We demonstrate that it is possible to obtain transistors with high performance and reproducibility by controlling the most relevant deposition factors, corroborated by a low deviation rate (below 10%) from the characteristic TFT parameters (mobility in saturation, threshold voltage and on/off ratio), which is compatible to commonly available commercial electronic devices.
publishDate 2020
dc.date.none.fl_str_mv 2020-12-10T20:06:07Z
2020-12-10T20:06:07Z
2020-01-01
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1557/adv.2020.199
Mrs Advances. New York: Cambridge Univ Press, v. 5, n. 35-36, p. 1859-1866, 2020.
2059-8521
http://hdl.handle.net/11449/197099
10.1557/adv.2020.199
WOS:000551135800006
url http://dx.doi.org/10.1557/adv.2020.199
http://hdl.handle.net/11449/197099
identifier_str_mv Mrs Advances. New York: Cambridge Univ Press, v. 5, n. 35-36, p. 1859-1866, 2020.
2059-8521
10.1557/adv.2020.199
WOS:000551135800006
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Mrs Advances
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 1859-1866
dc.publisher.none.fl_str_mv Cambridge Univ Press
publisher.none.fl_str_mv Cambridge Univ Press
dc.source.none.fl_str_mv Web of Science
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
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