On the reproducibility of spray-coated ZnO thin-film transistors
Autor(a) principal: | |
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Data de Publicação: | 2020 |
Outros Autores: | , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1557/adv.2020.199 http://hdl.handle.net/11449/197099 |
Resumo: | Recent studies have shown spray-pyrolysis is a low-cost, simple and efficient technique for deposition of metal oxide semiconductors (such as zinc oxide) as the active layer of thin-film transistors (TFTs). However, to allow the translation from laboratory scale to industry the reproducibility of such method needs to be evaluated. We present herein a representative study concerning the reproducibility and uniformity of spray-coated ZnO TFTs using several devices, from different production batches, following the same fabrication protocol. We demonstrate that it is possible to obtain transistors with high performance and reproducibility by controlling the most relevant deposition factors, corroborated by a low deviation rate (below 10%) from the characteristic TFT parameters (mobility in saturation, threshold voltage and on/off ratio), which is compatible to commonly available commercial electronic devices. |
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Repositório Institucional da UNESP |
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On the reproducibility of spray-coated ZnO thin-film transistorsthin filmspray pyrolysissolution depositionsemiconductingRecent studies have shown spray-pyrolysis is a low-cost, simple and efficient technique for deposition of metal oxide semiconductors (such as zinc oxide) as the active layer of thin-film transistors (TFTs). However, to allow the translation from laboratory scale to industry the reproducibility of such method needs to be evaluated. We present herein a representative study concerning the reproducibility and uniformity of spray-coated ZnO TFTs using several devices, from different production batches, following the same fabrication protocol. We demonstrate that it is possible to obtain transistors with high performance and reproducibility by controlling the most relevant deposition factors, corroborated by a low deviation rate (below 10%) from the characteristic TFT parameters (mobility in saturation, threshold voltage and on/off ratio), which is compatible to commonly available commercial electronic devices.Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Sao Paulo State Univ UNESP, Phys Dept IBILCE, BR-15054000 Sao Jose Do Rio Preto, SP, BrazilSao Paulo State Univ UNESP, Phys Dept IGCE, Av 24A,1515, BR-13506900 Rio Claro, SP, BrazilSao Paulo State Univ UNESP, Phys Dept IBILCE, BR-15054000 Sao Jose Do Rio Preto, SP, BrazilSao Paulo State Univ UNESP, Phys Dept IGCE, Av 24A,1515, BR-13506900 Rio Claro, SP, BrazilFAPESP: 2019/08019-9CAPES: 001Cambridge Univ PressUniversidade Estadual Paulista (Unesp)Lima, Guilherme R. [UNESP]Braga, Joao P. [UNESP]Gozzi, Giovani [UNESP]Fugikawa-Santos, Lucas [UNESP]2020-12-10T20:06:07Z2020-12-10T20:06:07Z2020-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article1859-1866http://dx.doi.org/10.1557/adv.2020.199Mrs Advances. New York: Cambridge Univ Press, v. 5, n. 35-36, p. 1859-1866, 2020.2059-8521http://hdl.handle.net/11449/19709910.1557/adv.2020.199WOS:000551135800006Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengMrs Advancesinfo:eu-repo/semantics/openAccess2021-10-23T11:33:11Zoai:repositorio.unesp.br:11449/197099Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462021-10-23T11:33:11Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
On the reproducibility of spray-coated ZnO thin-film transistors |
title |
On the reproducibility of spray-coated ZnO thin-film transistors |
spellingShingle |
On the reproducibility of spray-coated ZnO thin-film transistors Lima, Guilherme R. [UNESP] thin film spray pyrolysis solution deposition semiconducting |
title_short |
On the reproducibility of spray-coated ZnO thin-film transistors |
title_full |
On the reproducibility of spray-coated ZnO thin-film transistors |
title_fullStr |
On the reproducibility of spray-coated ZnO thin-film transistors |
title_full_unstemmed |
On the reproducibility of spray-coated ZnO thin-film transistors |
title_sort |
On the reproducibility of spray-coated ZnO thin-film transistors |
author |
Lima, Guilherme R. [UNESP] |
author_facet |
Lima, Guilherme R. [UNESP] Braga, Joao P. [UNESP] Gozzi, Giovani [UNESP] Fugikawa-Santos, Lucas [UNESP] |
author_role |
author |
author2 |
Braga, Joao P. [UNESP] Gozzi, Giovani [UNESP] Fugikawa-Santos, Lucas [UNESP] |
author2_role |
author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (Unesp) |
dc.contributor.author.fl_str_mv |
Lima, Guilherme R. [UNESP] Braga, Joao P. [UNESP] Gozzi, Giovani [UNESP] Fugikawa-Santos, Lucas [UNESP] |
dc.subject.por.fl_str_mv |
thin film spray pyrolysis solution deposition semiconducting |
topic |
thin film spray pyrolysis solution deposition semiconducting |
description |
Recent studies have shown spray-pyrolysis is a low-cost, simple and efficient technique for deposition of metal oxide semiconductors (such as zinc oxide) as the active layer of thin-film transistors (TFTs). However, to allow the translation from laboratory scale to industry the reproducibility of such method needs to be evaluated. We present herein a representative study concerning the reproducibility and uniformity of spray-coated ZnO TFTs using several devices, from different production batches, following the same fabrication protocol. We demonstrate that it is possible to obtain transistors with high performance and reproducibility by controlling the most relevant deposition factors, corroborated by a low deviation rate (below 10%) from the characteristic TFT parameters (mobility in saturation, threshold voltage and on/off ratio), which is compatible to commonly available commercial electronic devices. |
publishDate |
2020 |
dc.date.none.fl_str_mv |
2020-12-10T20:06:07Z 2020-12-10T20:06:07Z 2020-01-01 |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1557/adv.2020.199 Mrs Advances. New York: Cambridge Univ Press, v. 5, n. 35-36, p. 1859-1866, 2020. 2059-8521 http://hdl.handle.net/11449/197099 10.1557/adv.2020.199 WOS:000551135800006 |
url |
http://dx.doi.org/10.1557/adv.2020.199 http://hdl.handle.net/11449/197099 |
identifier_str_mv |
Mrs Advances. New York: Cambridge Univ Press, v. 5, n. 35-36, p. 1859-1866, 2020. 2059-8521 10.1557/adv.2020.199 WOS:000551135800006 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Mrs Advances |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
1859-1866 |
dc.publisher.none.fl_str_mv |
Cambridge Univ Press |
publisher.none.fl_str_mv |
Cambridge Univ Press |
dc.source.none.fl_str_mv |
Web of Science reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1799965048720850944 |