Structure of the Electrical Double Layer at the Interface between an Ionic Liquid and Tungsten Oxide in Ion-Gated Transistors

Detalhes bibliográficos
Autor(a) principal: Barbosa, Martin S. [UNESP]
Data de Publicação: 2020
Outros Autores: Balke, Nina, Tsai, Wan-Yu, Santato, Clara, Orlandi, Marcelo O. [UNESP]
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1021/acs.jpclett.0c00651
http://hdl.handle.net/11449/196903
Resumo: The structure of electrical double layers at electrified interfaces is of utmost importance for electrochemical energy storage as well as printable, flexible, and bioelectronic devices, such as ion-gated transistors (IGTs). Here we report a study based on atomic force microscopy force-distance profiling on electrical double layers forming at the interface between the ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide and sol-gel films of mesoporous tungsten oxide. We successfully followed, under in operando conditions, the evolution of the arrangement of the ions at the interface with the tungsten oxide films used as channel materials in IGTs. Our work sheds light on the mechanism of operation of IGTs, thus offering the possibility of optimizing their performance.
id UNSP_9f75b05f3c1105a4132bd28ce7ee8097
oai_identifier_str oai:repositorio.unesp.br:11449/196903
network_acronym_str UNSP
network_name_str Repositório Institucional da UNESP
repository_id_str 2946
spelling Structure of the Electrical Double Layer at the Interface between an Ionic Liquid and Tungsten Oxide in Ion-Gated TransistorsThe structure of electrical double layers at electrified interfaces is of utmost importance for electrochemical energy storage as well as printable, flexible, and bioelectronic devices, such as ion-gated transistors (IGTs). Here we report a study based on atomic force microscopy force-distance profiling on electrical double layers forming at the interface between the ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide and sol-gel films of mesoporous tungsten oxide. We successfully followed, under in operando conditions, the evolution of the arrangement of the ions at the interface with the tungsten oxide films used as channel materials in IGTs. Our work sheds light on the mechanism of operation of IGTs, thus offering the possibility of optimizing their performance.Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Fluid Interface Reactions, Structures and Transport (FIRST) Center, an Energy Frontier Research Center (EFRC) - DOE Office of Science, Office of Basic Energy SciencesNSERCUniv Estadual Paulista, Dept Fis Quim, BR-14800060 Araraquara, SP, BrazilPolytech Montreal, Dept Genie Phys, Montreal, PQ H3C 3A7, CanadaOak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USAUniv Estadual Paulista, Dept Fis Quim, BR-14800060 Araraquara, SP, BrazilCAPES: FAPESP/CAPES 2014/27079-9CAPES: 2015/50526-4CAPES: 2016/09033-7Amer Chemical SocUniversidade Estadual Paulista (Unesp)Polytech MontrealOak Ridge Natl LabBarbosa, Martin S. [UNESP]Balke, NinaTsai, Wan-YuSantato, ClaraOrlandi, Marcelo O. [UNESP]2020-12-10T19:59:50Z2020-12-10T19:59:50Z2020-05-07info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article3257-3262http://dx.doi.org/10.1021/acs.jpclett.0c00651Journal Of Physical Chemistry Letters. Washington: Amer Chemical Soc, v. 11, n. 9, p. 3257-3262, 2020.1948-7185http://hdl.handle.net/11449/19690310.1021/acs.jpclett.0c00651WOS:000535177500013Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengJournal Of Physical Chemistry Lettersinfo:eu-repo/semantics/openAccess2021-10-23T10:10:59Zoai:repositorio.unesp.br:11449/196903Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462021-10-23T10:10:59Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Structure of the Electrical Double Layer at the Interface between an Ionic Liquid and Tungsten Oxide in Ion-Gated Transistors
title Structure of the Electrical Double Layer at the Interface between an Ionic Liquid and Tungsten Oxide in Ion-Gated Transistors
spellingShingle Structure of the Electrical Double Layer at the Interface between an Ionic Liquid and Tungsten Oxide in Ion-Gated Transistors
Barbosa, Martin S. [UNESP]
title_short Structure of the Electrical Double Layer at the Interface between an Ionic Liquid and Tungsten Oxide in Ion-Gated Transistors
title_full Structure of the Electrical Double Layer at the Interface between an Ionic Liquid and Tungsten Oxide in Ion-Gated Transistors
title_fullStr Structure of the Electrical Double Layer at the Interface between an Ionic Liquid and Tungsten Oxide in Ion-Gated Transistors
title_full_unstemmed Structure of the Electrical Double Layer at the Interface between an Ionic Liquid and Tungsten Oxide in Ion-Gated Transistors
title_sort Structure of the Electrical Double Layer at the Interface between an Ionic Liquid and Tungsten Oxide in Ion-Gated Transistors
author Barbosa, Martin S. [UNESP]
author_facet Barbosa, Martin S. [UNESP]
Balke, Nina
Tsai, Wan-Yu
Santato, Clara
Orlandi, Marcelo O. [UNESP]
author_role author
author2 Balke, Nina
Tsai, Wan-Yu
Santato, Clara
Orlandi, Marcelo O. [UNESP]
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (Unesp)
Polytech Montreal
Oak Ridge Natl Lab
dc.contributor.author.fl_str_mv Barbosa, Martin S. [UNESP]
Balke, Nina
Tsai, Wan-Yu
Santato, Clara
Orlandi, Marcelo O. [UNESP]
description The structure of electrical double layers at electrified interfaces is of utmost importance for electrochemical energy storage as well as printable, flexible, and bioelectronic devices, such as ion-gated transistors (IGTs). Here we report a study based on atomic force microscopy force-distance profiling on electrical double layers forming at the interface between the ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide and sol-gel films of mesoporous tungsten oxide. We successfully followed, under in operando conditions, the evolution of the arrangement of the ions at the interface with the tungsten oxide films used as channel materials in IGTs. Our work sheds light on the mechanism of operation of IGTs, thus offering the possibility of optimizing their performance.
publishDate 2020
dc.date.none.fl_str_mv 2020-12-10T19:59:50Z
2020-12-10T19:59:50Z
2020-05-07
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1021/acs.jpclett.0c00651
Journal Of Physical Chemistry Letters. Washington: Amer Chemical Soc, v. 11, n. 9, p. 3257-3262, 2020.
1948-7185
http://hdl.handle.net/11449/196903
10.1021/acs.jpclett.0c00651
WOS:000535177500013
url http://dx.doi.org/10.1021/acs.jpclett.0c00651
http://hdl.handle.net/11449/196903
identifier_str_mv Journal Of Physical Chemistry Letters. Washington: Amer Chemical Soc, v. 11, n. 9, p. 3257-3262, 2020.
1948-7185
10.1021/acs.jpclett.0c00651
WOS:000535177500013
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Journal Of Physical Chemistry Letters
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 3257-3262
dc.publisher.none.fl_str_mv Amer Chemical Soc
publisher.none.fl_str_mv Amer Chemical Soc
dc.source.none.fl_str_mv Web of Science
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1799965171656949760

Registros relacionados