Effects of crystallization kinetics on the dielectric and electrical properties of BiFeO 3 films
Autor(a) principal: | |
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Data de Publicação: | 2021 |
Outros Autores: | , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1142/S2010135X21400075 http://hdl.handle.net/11449/221827 |
Resumo: | BiFeO3 thin films were prepared using the chemical solution route on Pt/TiO2/SiO2/Si(100) substrates under different crystallization kinetics. The crystallization kinetic effects on the dielectric and electrical properties have been investigated. These properties included dielectric permittivity, electric modulus, electrical conductivity measurements as a function of the temperature (300-525 K) and frequency (102-106 Hz), and leakage current measurements electric field range ± 30 kV/cm at room temperature. The differences observed in conductivity and current density of the BiFeO3 films were discussed in terms of possible defects induced by the crystallization kinetic. An anomalous relaxor-like dielectric behavior characterized by a broad maximum in the real dielectric permittivity as a function of temperature and the low-frequency dielectric dispersion has been observed. The nonexpected peaks in the real permittivity were accompanied by increasing at least four orders in the conductivity's magnitude at high temperatures. The origin of the relaxor-like dielectric anomalies is discussed, suggesting that the dielectric permittivity peaks are artifacts due to carrier migration correlated to the onset of the Maxwell-Wagner effect. |
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Effects of crystallization kinetics on the dielectric and electrical properties of BiFeO 3 filmsBiFeO3dielectric relaxationleakage currentthin filmsBiFeO3 thin films were prepared using the chemical solution route on Pt/TiO2/SiO2/Si(100) substrates under different crystallization kinetics. The crystallization kinetic effects on the dielectric and electrical properties have been investigated. These properties included dielectric permittivity, electric modulus, electrical conductivity measurements as a function of the temperature (300-525 K) and frequency (102-106 Hz), and leakage current measurements electric field range ± 30 kV/cm at room temperature. The differences observed in conductivity and current density of the BiFeO3 films were discussed in terms of possible defects induced by the crystallization kinetic. An anomalous relaxor-like dielectric behavior characterized by a broad maximum in the real dielectric permittivity as a function of temperature and the low-frequency dielectric dispersion has been observed. The nonexpected peaks in the real permittivity were accompanied by increasing at least four orders in the conductivity's magnitude at high temperatures. The origin of the relaxor-like dielectric anomalies is discussed, suggesting that the dielectric permittivity peaks are artifacts due to carrier migration correlated to the onset of the Maxwell-Wagner effect.Department of Physics and Chemistry São Paulo State UniversityFacultad de Física Universidad de la Habana. San Lázaro y LFederal Institute of Education Science and Technology of São PauloUniversity of Rio Verde (UniRV)Departamento de Física Grupo de Materiais Ferróicos Universidade Federal de São CarlosDepartment of Physics and Chemistry São Paulo State UniversityUniversidade Estadual Paulista (UNESP)Universidad de la Habana. San Lázaro y LScience and Technology of São PauloUniversity of Rio Verde (UniRV)Universidade Federal de São Carlos (UFSCar)González-Abreu, Y. [UNESP]Reis, S. P.Freitas, F. E. [UNESP]Eiras, J. A.Araújo, E. B. [UNESP]2022-04-28T19:40:51Z2022-04-28T19:40:51Z2021-06-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://dx.doi.org/10.1142/S2010135X21400075Journal of Advanced Dielectrics, v. 11, n. 3, 2021.2010-13682010-135Xhttp://hdl.handle.net/11449/22182710.1142/S2010135X214000752-s2.0-85108517448Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengJournal of Advanced Dielectricsinfo:eu-repo/semantics/openAccess2022-04-28T19:40:51Zoai:repositorio.unesp.br:11449/221827Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462022-04-28T19:40:51Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Effects of crystallization kinetics on the dielectric and electrical properties of BiFeO 3 films |
title |
Effects of crystallization kinetics on the dielectric and electrical properties of BiFeO 3 films |
spellingShingle |
Effects of crystallization kinetics on the dielectric and electrical properties of BiFeO 3 films González-Abreu, Y. [UNESP] BiFeO3 dielectric relaxation leakage current thin films |
title_short |
Effects of crystallization kinetics on the dielectric and electrical properties of BiFeO 3 films |
title_full |
Effects of crystallization kinetics on the dielectric and electrical properties of BiFeO 3 films |
title_fullStr |
Effects of crystallization kinetics on the dielectric and electrical properties of BiFeO 3 films |
title_full_unstemmed |
Effects of crystallization kinetics on the dielectric and electrical properties of BiFeO 3 films |
title_sort |
Effects of crystallization kinetics on the dielectric and electrical properties of BiFeO 3 films |
author |
González-Abreu, Y. [UNESP] |
author_facet |
González-Abreu, Y. [UNESP] Reis, S. P. Freitas, F. E. [UNESP] Eiras, J. A. Araújo, E. B. [UNESP] |
author_role |
author |
author2 |
Reis, S. P. Freitas, F. E. [UNESP] Eiras, J. A. Araújo, E. B. [UNESP] |
author2_role |
author author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (UNESP) Universidad de la Habana. San Lázaro y L Science and Technology of São Paulo University of Rio Verde (UniRV) Universidade Federal de São Carlos (UFSCar) |
dc.contributor.author.fl_str_mv |
González-Abreu, Y. [UNESP] Reis, S. P. Freitas, F. E. [UNESP] Eiras, J. A. Araújo, E. B. [UNESP] |
dc.subject.por.fl_str_mv |
BiFeO3 dielectric relaxation leakage current thin films |
topic |
BiFeO3 dielectric relaxation leakage current thin films |
description |
BiFeO3 thin films were prepared using the chemical solution route on Pt/TiO2/SiO2/Si(100) substrates under different crystallization kinetics. The crystallization kinetic effects on the dielectric and electrical properties have been investigated. These properties included dielectric permittivity, electric modulus, electrical conductivity measurements as a function of the temperature (300-525 K) and frequency (102-106 Hz), and leakage current measurements electric field range ± 30 kV/cm at room temperature. The differences observed in conductivity and current density of the BiFeO3 films were discussed in terms of possible defects induced by the crystallization kinetic. An anomalous relaxor-like dielectric behavior characterized by a broad maximum in the real dielectric permittivity as a function of temperature and the low-frequency dielectric dispersion has been observed. The nonexpected peaks in the real permittivity were accompanied by increasing at least four orders in the conductivity's magnitude at high temperatures. The origin of the relaxor-like dielectric anomalies is discussed, suggesting that the dielectric permittivity peaks are artifacts due to carrier migration correlated to the onset of the Maxwell-Wagner effect. |
publishDate |
2021 |
dc.date.none.fl_str_mv |
2021-06-01 2022-04-28T19:40:51Z 2022-04-28T19:40:51Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1142/S2010135X21400075 Journal of Advanced Dielectrics, v. 11, n. 3, 2021. 2010-1368 2010-135X http://hdl.handle.net/11449/221827 10.1142/S2010135X21400075 2-s2.0-85108517448 |
url |
http://dx.doi.org/10.1142/S2010135X21400075 http://hdl.handle.net/11449/221827 |
identifier_str_mv |
Journal of Advanced Dielectrics, v. 11, n. 3, 2021. 2010-1368 2010-135X 10.1142/S2010135X21400075 2-s2.0-85108517448 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Journal of Advanced Dielectrics |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1799964446090592256 |