New method for self-heating estimation using only DC measurements

Detalhes bibliográficos
Autor(a) principal: Mori, C. A. B.
Data de Publicação: 2018
Outros Autores: Agopian, P. G. D. [UNESP], Martino, J. A., Gamiz, F., Sverdlov, V, Sampedro, C., Donetti, L.
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://hdl.handle.net/11449/208856
Resumo: This paper reports a new method for estimating the thermal resistance of a device using the inverse of the transistor efficiency as a function of the power applied to the transistor's channel. The advantages of this new method are the use of DC measurements only and errors smaller than 4% in the estimation of the channel temperature increase due to the SHE when compared to a pulsed method for the UTBB SOI studied in this work.
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spelling New method for self-heating estimation using only DC measurementsSelf-heating effectSilicon-On-InsulatorUTBBThis paper reports a new method for estimating the thermal resistance of a device using the inverse of the transistor efficiency as a function of the power applied to the transistor's channel. The advantages of this new method are the use of DC measurements only and errors smaller than 4% in the estimation of the channel temperature increase due to the SHE when compared to a pulsed method for the UTBB SOI studied in this work.Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Univ Sao Paulo, LSI PSI USP, Sao Paulo, BrazilSao Paulo State Univ UNESP, Sao Joao Da Boa Vista, BrazilSao Paulo State Univ UNESP, Sao Joao Da Boa Vista, BrazilIeeeUniversidade de São Paulo (USP)Universidade Estadual Paulista (Unesp)Mori, C. A. B.Agopian, P. G. D. [UNESP]Martino, J. A.Gamiz, F.Sverdlov, VSampedro, C.Donetti, L.2021-06-25T11:22:53Z2021-06-25T11:22:53Z2018-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject149-1522018 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis). New York: Ieee, p. 149-152, 2018.2330-5738http://hdl.handle.net/11449/208856WOS:000576960300038Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2018 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis)info:eu-repo/semantics/openAccess2021-10-23T19:23:15Zoai:repositorio.unesp.br:11449/208856Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462021-10-23T19:23:15Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv New method for self-heating estimation using only DC measurements
title New method for self-heating estimation using only DC measurements
spellingShingle New method for self-heating estimation using only DC measurements
Mori, C. A. B.
Self-heating effect
Silicon-On-Insulator
UTBB
title_short New method for self-heating estimation using only DC measurements
title_full New method for self-heating estimation using only DC measurements
title_fullStr New method for self-heating estimation using only DC measurements
title_full_unstemmed New method for self-heating estimation using only DC measurements
title_sort New method for self-heating estimation using only DC measurements
author Mori, C. A. B.
author_facet Mori, C. A. B.
Agopian, P. G. D. [UNESP]
Martino, J. A.
Gamiz, F.
Sverdlov, V
Sampedro, C.
Donetti, L.
author_role author
author2 Agopian, P. G. D. [UNESP]
Martino, J. A.
Gamiz, F.
Sverdlov, V
Sampedro, C.
Donetti, L.
author2_role author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade de São Paulo (USP)
Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv Mori, C. A. B.
Agopian, P. G. D. [UNESP]
Martino, J. A.
Gamiz, F.
Sverdlov, V
Sampedro, C.
Donetti, L.
dc.subject.por.fl_str_mv Self-heating effect
Silicon-On-Insulator
UTBB
topic Self-heating effect
Silicon-On-Insulator
UTBB
description This paper reports a new method for estimating the thermal resistance of a device using the inverse of the transistor efficiency as a function of the power applied to the transistor's channel. The advantages of this new method are the use of DC measurements only and errors smaller than 4% in the estimation of the channel temperature increase due to the SHE when compared to a pulsed method for the UTBB SOI studied in this work.
publishDate 2018
dc.date.none.fl_str_mv 2018-01-01
2021-06-25T11:22:53Z
2021-06-25T11:22:53Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv 2018 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis). New York: Ieee, p. 149-152, 2018.
2330-5738
http://hdl.handle.net/11449/208856
WOS:000576960300038
identifier_str_mv 2018 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis). New York: Ieee, p. 149-152, 2018.
2330-5738
WOS:000576960300038
url http://hdl.handle.net/11449/208856
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2018 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis)
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 149-152
dc.publisher.none.fl_str_mv Ieee
publisher.none.fl_str_mv Ieee
dc.source.none.fl_str_mv Web of Science
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1799965070112849921

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