Structural and electrical properties of LaNiO3 thin films grown on (100) and (001) oriented SrLaAlO4 substrates by chemical solution deposition method
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Publication Date: | 2014 |
Other Authors: | , , , , |
Format: | Conference object |
Language: | eng |
Source: | Repositório Institucional da UNESP |
Download full: | http://dx.doi.org/10.1557/opl.2014.116 http://hdl.handle.net/11449/171523 |
Summary: | LaNiO3 thin films were deposited on SrLaAlO4 (100) and SrLaAlO4 (001) single crystal substrates by a chemical solution deposition method and heat-treated in oxygen atmosphere at 700°C in tube oven. Structural, morphological, and electrical properties of the LaNiO 3 thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and electrical resistivity as temperature function (Hall measurements). The X-ray diffraction data indicated good crystallinity and a structural preferential orientation. The LaNiO3 thin films have a very flat surface and no droplet was found on their surfaces. Samples of LaNiO3 grown onto (100) and (001) oriented SrLaAlO4 single crystal substrates reveled average grain size by AFM approximately 15-30 and 20-35 nm, respectively. Transport characteristics observed were clearly dependent upon the substrate orientation which exhibited a metal-to-insulator transition. The underlying mechanism is a result of competition between the mobility edge and the Fermi energy through the occupation of electron states which in turn is controlled by the disorder level induced by different growth surfaces. Copyright © Materials Research Society 2014. |
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Structural and electrical properties of LaNiO3 thin films grown on (100) and (001) oriented SrLaAlO4 substrates by chemical solution deposition methodelectrical propertiesepitaxythin filmLaNiO3 thin films were deposited on SrLaAlO4 (100) and SrLaAlO4 (001) single crystal substrates by a chemical solution deposition method and heat-treated in oxygen atmosphere at 700°C in tube oven. Structural, morphological, and electrical properties of the LaNiO 3 thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and electrical resistivity as temperature function (Hall measurements). The X-ray diffraction data indicated good crystallinity and a structural preferential orientation. The LaNiO3 thin films have a very flat surface and no droplet was found on their surfaces. Samples of LaNiO3 grown onto (100) and (001) oriented SrLaAlO4 single crystal substrates reveled average grain size by AFM approximately 15-30 and 20-35 nm, respectively. Transport characteristics observed were clearly dependent upon the substrate orientation which exhibited a metal-to-insulator transition. The underlying mechanism is a result of competition between the mobility edge and the Fermi energy through the occupation of electron states which in turn is controlled by the disorder level induced by different growth surfaces. Copyright © Materials Research Society 2014.LIEC, Department of Chemistry, Universidade Federal de São Carlos, Via Washington Luiz, 13565-905, São Carlos, São PauloDepartment of Chemistry, Universidade Estadual Paulista - Unesp, P.O. Box 473, 17033-360, Bauru, São PauloInstitute of Physics of São Carlos, USP, São Carlos, 13560-250, São PauloUNICEP, São Carlos, 13563-470, São PauloNanO LaB, Department of Physics, Universidade Federal de São Carlos, Via Washington Luiz, 13565-905, São Carlos, São PauloInstitute of Chemistry, Universidade Estadual Paulista - Unesp, Araraquara, São PauloDepartment of Chemistry, Universidade Estadual Paulista - Unesp, P.O. Box 473, 17033-360, Bauru, São PauloInstitute of Chemistry, Universidade Estadual Paulista - Unesp, Araraquara, São PauloUniversidade Federal de São Carlos (UFSCar)Universidade Estadual Paulista (Unesp)Universidade de São Paulo (USP)UNICEPPontes, D. S LPontes, F. M. [UNESP]Pereira-Da-Silva, Marcelo A.Berengue, O. M.Chiquito, A. J.Longo, E. [UNESP]2018-12-11T16:55:42Z2018-12-11T16:55:42Z2014-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObjectapplication/pdfhttp://dx.doi.org/10.1557/opl.2014.116Materials Research Society Symposium Proceedings, v. 1633.0272-9172http://hdl.handle.net/11449/17152310.1557/opl.2014.1162-s2.0-848979904572-s2.0-84897990457.pdfScopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengMaterials Research Society Symposium Proceedings0,139info:eu-repo/semantics/openAccess2024-04-29T18:17:23Zoai:repositorio.unesp.br:11449/171523Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T14:10:04.564893Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Structural and electrical properties of LaNiO3 thin films grown on (100) and (001) oriented SrLaAlO4 substrates by chemical solution deposition method |
title |
Structural and electrical properties of LaNiO3 thin films grown on (100) and (001) oriented SrLaAlO4 substrates by chemical solution deposition method |
spellingShingle |
Structural and electrical properties of LaNiO3 thin films grown on (100) and (001) oriented SrLaAlO4 substrates by chemical solution deposition method Pontes, D. S L electrical properties epitaxy thin film |
title_short |
Structural and electrical properties of LaNiO3 thin films grown on (100) and (001) oriented SrLaAlO4 substrates by chemical solution deposition method |
title_full |
Structural and electrical properties of LaNiO3 thin films grown on (100) and (001) oriented SrLaAlO4 substrates by chemical solution deposition method |
title_fullStr |
Structural and electrical properties of LaNiO3 thin films grown on (100) and (001) oriented SrLaAlO4 substrates by chemical solution deposition method |
title_full_unstemmed |
Structural and electrical properties of LaNiO3 thin films grown on (100) and (001) oriented SrLaAlO4 substrates by chemical solution deposition method |
title_sort |
Structural and electrical properties of LaNiO3 thin films grown on (100) and (001) oriented SrLaAlO4 substrates by chemical solution deposition method |
author |
Pontes, D. S L |
author_facet |
Pontes, D. S L Pontes, F. M. [UNESP] Pereira-Da-Silva, Marcelo A. Berengue, O. M. Chiquito, A. J. Longo, E. [UNESP] |
author_role |
author |
author2 |
Pontes, F. M. [UNESP] Pereira-Da-Silva, Marcelo A. Berengue, O. M. Chiquito, A. J. Longo, E. [UNESP] |
author2_role |
author author author author author |
dc.contributor.none.fl_str_mv |
Universidade Federal de São Carlos (UFSCar) Universidade Estadual Paulista (Unesp) Universidade de São Paulo (USP) UNICEP |
dc.contributor.author.fl_str_mv |
Pontes, D. S L Pontes, F. M. [UNESP] Pereira-Da-Silva, Marcelo A. Berengue, O. M. Chiquito, A. J. Longo, E. [UNESP] |
dc.subject.por.fl_str_mv |
electrical properties epitaxy thin film |
topic |
electrical properties epitaxy thin film |
description |
LaNiO3 thin films were deposited on SrLaAlO4 (100) and SrLaAlO4 (001) single crystal substrates by a chemical solution deposition method and heat-treated in oxygen atmosphere at 700°C in tube oven. Structural, morphological, and electrical properties of the LaNiO 3 thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and electrical resistivity as temperature function (Hall measurements). The X-ray diffraction data indicated good crystallinity and a structural preferential orientation. The LaNiO3 thin films have a very flat surface and no droplet was found on their surfaces. Samples of LaNiO3 grown onto (100) and (001) oriented SrLaAlO4 single crystal substrates reveled average grain size by AFM approximately 15-30 and 20-35 nm, respectively. Transport characteristics observed were clearly dependent upon the substrate orientation which exhibited a metal-to-insulator transition. The underlying mechanism is a result of competition between the mobility edge and the Fermi energy through the occupation of electron states which in turn is controlled by the disorder level induced by different growth surfaces. Copyright © Materials Research Society 2014. |
publishDate |
2014 |
dc.date.none.fl_str_mv |
2014-01-01 2018-12-11T16:55:42Z 2018-12-11T16:55:42Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1557/opl.2014.116 Materials Research Society Symposium Proceedings, v. 1633. 0272-9172 http://hdl.handle.net/11449/171523 10.1557/opl.2014.116 2-s2.0-84897990457 2-s2.0-84897990457.pdf |
url |
http://dx.doi.org/10.1557/opl.2014.116 http://hdl.handle.net/11449/171523 |
identifier_str_mv |
Materials Research Society Symposium Proceedings, v. 1633. 0272-9172 10.1557/opl.2014.116 2-s2.0-84897990457 2-s2.0-84897990457.pdf |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Materials Research Society Symposium Proceedings 0,139 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
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1808128326898810880 |