Strain behavior of lanthanum modified BiFeO3 thin films prepared via soft chemical method
Autor(a) principal: | |
---|---|
Data de Publicação: | 2008 |
Outros Autores: | , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1063/1.3029658 http://hdl.handle.net/11449/42399 |
Resumo: | Pure and lanthanum modified BFO (LaxBi1-xFeO3, x=0.0, 0.08, 0.15, 0.30) thin films were fabricated on Pt(111)/Ti/SiO2/Si substrates by the soft chemical method. The effect of La substitution on the structural and electrical properties was studied. Scanning electron microscopy, x-ray diffraction, and Raman spectroscopy have been employed to characterize the thin films while the piezoelectric measurements were carried out using a setup based on an atomic force microscope. It was found that La-doped BFO thin films exhibited good ferroelectric properties, such as improved leakage current density and retention-free characteristics. The unipolar strain is strongly reduced by the amount of lanthanum added to the system. |
id |
UNSP_cc54eef3523548f58bd81272048af784 |
---|---|
oai_identifier_str |
oai:repositorio.unesp.br:11449/42399 |
network_acronym_str |
UNSP |
network_name_str |
Repositório Institucional da UNESP |
repository_id_str |
2946 |
spelling |
Strain behavior of lanthanum modified BiFeO3 thin films prepared via soft chemical methodannealingantiferromagnetic materialsatomic force microscopybismuth compoundsdielectric polarisationferroelectric switchingferroelectric thin filmslanthanum compoundsleakage currentsmultiferroicspiezoelectricityplatinumRaman spectrascanning electron microscopysiliconsilicon compoundstitaniumX-ray diffractionPure and lanthanum modified BFO (LaxBi1-xFeO3, x=0.0, 0.08, 0.15, 0.30) thin films were fabricated on Pt(111)/Ti/SiO2/Si substrates by the soft chemical method. The effect of La substitution on the structural and electrical properties was studied. Scanning electron microscopy, x-ray diffraction, and Raman spectroscopy have been employed to characterize the thin films while the piezoelectric measurements were carried out using a setup based on an atomic force microscope. It was found that La-doped BFO thin films exhibited good ferroelectric properties, such as improved leakage current density and retention-free characteristics. The unipolar strain is strongly reduced by the amount of lanthanum added to the system.Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Univ Estadual Paulista, CEP, LIEC, Dept Fisicoquim,Inst Quim, BR-14800900 São Paulo, BrazilUniv Jaume 1, Dept Quim Fis & Analit, Castellon de La Plana 12071, SpainUniv Estadual Paulista, CEP, LIEC, Dept Fisicoquim,Inst Quim, BR-14800900 São Paulo, BrazilAmerican Institute of Physics (AIP)Universidade Estadual Paulista (Unesp)Univ Jaume 1Simões, Alexandre Zirpoli [UNESP]Aguiar, E. C. [UNESP]Gonzalez, A. H. M. [UNESP]Andres, J.Longo, Elson [UNESP]Varela, José Arana [UNESP]2014-05-20T15:34:02Z2014-05-20T15:34:02Z2008-11-15info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article6application/pdfhttp://dx.doi.org/10.1063/1.3029658Journal of Applied Physics. Melville: Amer Inst Physics, v. 104, n. 10, p. 6, 2008.0021-8979http://hdl.handle.net/11449/4239910.1063/1.3029658WOS:000262605800118WOS000262605800118.pdfWeb of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengJournal of Applied Physics2.1760,739info:eu-repo/semantics/openAccess2023-11-21T06:09:15Zoai:repositorio.unesp.br:11449/42399Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462023-11-21T06:09:15Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Strain behavior of lanthanum modified BiFeO3 thin films prepared via soft chemical method |
title |
Strain behavior of lanthanum modified BiFeO3 thin films prepared via soft chemical method |
spellingShingle |
Strain behavior of lanthanum modified BiFeO3 thin films prepared via soft chemical method Simões, Alexandre Zirpoli [UNESP] annealing antiferromagnetic materials atomic force microscopy bismuth compounds dielectric polarisation ferroelectric switching ferroelectric thin films lanthanum compounds leakage currents multiferroics piezoelectricity platinum Raman spectra scanning electron microscopy silicon silicon compounds titanium X-ray diffraction |
title_short |
Strain behavior of lanthanum modified BiFeO3 thin films prepared via soft chemical method |
title_full |
Strain behavior of lanthanum modified BiFeO3 thin films prepared via soft chemical method |
title_fullStr |
Strain behavior of lanthanum modified BiFeO3 thin films prepared via soft chemical method |
title_full_unstemmed |
Strain behavior of lanthanum modified BiFeO3 thin films prepared via soft chemical method |
title_sort |
Strain behavior of lanthanum modified BiFeO3 thin films prepared via soft chemical method |
author |
Simões, Alexandre Zirpoli [UNESP] |
author_facet |
Simões, Alexandre Zirpoli [UNESP] Aguiar, E. C. [UNESP] Gonzalez, A. H. M. [UNESP] Andres, J. Longo, Elson [UNESP] Varela, José Arana [UNESP] |
author_role |
author |
author2 |
Aguiar, E. C. [UNESP] Gonzalez, A. H. M. [UNESP] Andres, J. Longo, Elson [UNESP] Varela, José Arana [UNESP] |
author2_role |
author author author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (Unesp) Univ Jaume 1 |
dc.contributor.author.fl_str_mv |
Simões, Alexandre Zirpoli [UNESP] Aguiar, E. C. [UNESP] Gonzalez, A. H. M. [UNESP] Andres, J. Longo, Elson [UNESP] Varela, José Arana [UNESP] |
dc.subject.por.fl_str_mv |
annealing antiferromagnetic materials atomic force microscopy bismuth compounds dielectric polarisation ferroelectric switching ferroelectric thin films lanthanum compounds leakage currents multiferroics piezoelectricity platinum Raman spectra scanning electron microscopy silicon silicon compounds titanium X-ray diffraction |
topic |
annealing antiferromagnetic materials atomic force microscopy bismuth compounds dielectric polarisation ferroelectric switching ferroelectric thin films lanthanum compounds leakage currents multiferroics piezoelectricity platinum Raman spectra scanning electron microscopy silicon silicon compounds titanium X-ray diffraction |
description |
Pure and lanthanum modified BFO (LaxBi1-xFeO3, x=0.0, 0.08, 0.15, 0.30) thin films were fabricated on Pt(111)/Ti/SiO2/Si substrates by the soft chemical method. The effect of La substitution on the structural and electrical properties was studied. Scanning electron microscopy, x-ray diffraction, and Raman spectroscopy have been employed to characterize the thin films while the piezoelectric measurements were carried out using a setup based on an atomic force microscope. It was found that La-doped BFO thin films exhibited good ferroelectric properties, such as improved leakage current density and retention-free characteristics. The unipolar strain is strongly reduced by the amount of lanthanum added to the system. |
publishDate |
2008 |
dc.date.none.fl_str_mv |
2008-11-15 2014-05-20T15:34:02Z 2014-05-20T15:34:02Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1063/1.3029658 Journal of Applied Physics. Melville: Amer Inst Physics, v. 104, n. 10, p. 6, 2008. 0021-8979 http://hdl.handle.net/11449/42399 10.1063/1.3029658 WOS:000262605800118 WOS000262605800118.pdf |
url |
http://dx.doi.org/10.1063/1.3029658 http://hdl.handle.net/11449/42399 |
identifier_str_mv |
Journal of Applied Physics. Melville: Amer Inst Physics, v. 104, n. 10, p. 6, 2008. 0021-8979 10.1063/1.3029658 WOS:000262605800118 WOS000262605800118.pdf |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Journal of Applied Physics 2.176 0,739 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
6 application/pdf |
dc.publisher.none.fl_str_mv |
American Institute of Physics (AIP) |
publisher.none.fl_str_mv |
American Institute of Physics (AIP) |
dc.source.none.fl_str_mv |
Web of Science reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1799965013971042304 |