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1

Random telegraph signal noise in advanced high performance and memory devices

by Claeys, C.

Published 2016

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2

Random Telegraph Signal Noise in Advanced High Performance and Memory Devices

by Claeys, C.

Published 2016

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3

ESTIMATING TEMPERATURE DEPENDENCE OF GENERATION LIFETIME EXTRACTED FROM DRAIN CURRENT TRANSIENTS

by MARTINO, J. A.

Published 2006

Other Authors: “...CLAEYS, C....”
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4

Subthreshold Region Analysis for UTBOX and UTBB SOI nMOSFETs with Different Channel Lengths and Silicon Thickness

by Silva, V. C. P.

Published 2017

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5

Floating Body Effect on n-Channel Bulk FinFETs for Memory Application

by Andrade, M. G. C. [UNESP]

Published 2014

Other Authors: “...Claeys, C....”
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6

Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures

by Martino, M. D.V.

Published 2017

Other Authors: “...Claeys, C....”
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7

Comparison between proton irradiated triple gate SOI TFETS and finfets from a TID point of view

by Agopian, P. G.D. [UNESP]

Published 2019

Other Authors: “...Claeys, C....”
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8

Subthreshold region analysis for UTBOX and UTBB SOI nMOSFETs with different channel lengths and silicon thickness

by Silva, V. C.P.

Published 2017

Other Authors: “...Claeys, C....”
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9

Experimental Analysis of Differential Pairs Designed with Line Tunnel FET Devices

by Martino, M. D. V.

Published 2017

Other Authors: “...Claeys, C....”
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10

Proton radiation effects on the self-aligned triple gate SOI p-type Tunnel FET output characteristic

by Torres, H. L. F.

Published 2017

Other Authors: “...Claeys, C....”
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11

Performance of differential pair circuits designed with line tunnel FET devices at different temperatures

by Martino, M. D.V.

Published 2018

Other Authors: “...Claeys, C....”
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12

Floating body effect on n-channel bulk FinFETs for memory application

by Andrade, M. G.C. [UNESP]

Published 2014

Other Authors: “...Claeys, C....”
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13

Impact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs

by Bordallo, C.

Published 2017

Other Authors: “...Claeys, C....”
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14

Low temperature performance of proton irradiated strained SOI FinFET

by Caparroz, L. F. V.

Published 2017

Other Authors: “...Claeys, C....”
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15

Split CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processes

by Oliveira, A. V.

Published 2016

Other Authors: “...Claeys, C....”
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16

Ground Plane Impact on the Threshold Voltage of Relaxed Ge pFinFETs

by Goncalves, G. V.

Published 2018

Other Authors: “...Claeys, C....”
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17

Low temperature effect on strained and relaxed Ge pFinFETs STI last processes

by Oliveira, A. V.

Published 2016

Other Authors: “...Claeys, C....”
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18

Impact of the Zn diffusion process at the source side of InxGa1-xAs nTFETs on the analog parameters down to 10 K

by Bordallo, C.

Published 2018

Other Authors: “...Claeys, C....”
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19

Impact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs

by Bordallo, C.

Published 2016

Other Authors: “...Claeys, C....”
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20

Experimental comparison between relaxed and strained Ge pFinFETs

by Oliveira, A. V.

Published 2017

Other Authors: “...Claeys, C....”
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