Random telegraph signal noise in advanced high performance and memory devices

Detalhes bibliográficos
Autor(a) principal: Claeys, C.
Data de Publicação: 2016
Outros Autores: De Andrade, M. G.C. [UNESP], Chai, Z., Fang, W., Govoreanu, B., Kaczer, B., Zhang, W., Simoen, E.
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1109/SBMicro.2016.7731315
http://hdl.handle.net/11449/169280
Resumo: Random Telegraph Signal noise has been extensively studied for more than 30 years and gained high interest in recent years due to its importance for scaled down technologies. This review will demonstrate the power of RTS for single defect characterization. Present understanding of the device physics and evolutions in RTS characterization are highlighted. Special attention is given to RTS in memory devices such as DRAMS, ReRAM, planar (2D) and vertical (3D) flash.
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spelling Random telegraph signal noise in advanced high performance and memory devicesinterface trapslow frequency noiseoxide trapsrandom telegraph signalReRAMstime lag plotUTBB SOIRandom Telegraph Signal noise has been extensively studied for more than 30 years and gained high interest in recent years due to its importance for scaled down technologies. This review will demonstrate the power of RTS for single defect characterization. Present understanding of the device physics and evolutions in RTS characterization are highlighted. Special attention is given to RTS in memory devices such as DRAMS, ReRAM, planar (2D) and vertical (3D) flash.ImecE.E. Dept. KU LeuvenUNESP - Univ Estadual Paulista Automation and Integrated SystemsE.E Dept. Liverpool John Moores UniversityMicrosystem and Terahertz Research CenterDept. Solid-State Physics Ghent UniversityUNESP - Univ Estadual Paulista Automation and Integrated SystemsImecKU LeuvenUniversidade Estadual Paulista (Unesp)Liverpool John Moores UniversityMicrosystem and Terahertz Research CenterGhent UniversityClaeys, C.De Andrade, M. G.C. [UNESP]Chai, Z.Fang, W.Govoreanu, B.Kaczer, B.Zhang, W.Simoen, E.2018-12-11T16:45:12Z2018-12-11T16:45:12Z2016-11-02info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObjecthttp://dx.doi.org/10.1109/SBMicro.2016.7731315SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum.http://hdl.handle.net/11449/16928010.1109/SBMicro.2016.77313152-s2.0-85007286667Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengSBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Foruminfo:eu-repo/semantics/openAccess2021-10-23T21:47:00Zoai:repositorio.unesp.br:11449/169280Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462021-10-23T21:47Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Random telegraph signal noise in advanced high performance and memory devices
title Random telegraph signal noise in advanced high performance and memory devices
spellingShingle Random telegraph signal noise in advanced high performance and memory devices
Claeys, C.
interface traps
low frequency noise
oxide traps
random telegraph signal
ReRAMs
time lag plot
UTBB SOI
title_short Random telegraph signal noise in advanced high performance and memory devices
title_full Random telegraph signal noise in advanced high performance and memory devices
title_fullStr Random telegraph signal noise in advanced high performance and memory devices
title_full_unstemmed Random telegraph signal noise in advanced high performance and memory devices
title_sort Random telegraph signal noise in advanced high performance and memory devices
author Claeys, C.
author_facet Claeys, C.
De Andrade, M. G.C. [UNESP]
Chai, Z.
Fang, W.
Govoreanu, B.
Kaczer, B.
Zhang, W.
Simoen, E.
author_role author
author2 De Andrade, M. G.C. [UNESP]
Chai, Z.
Fang, W.
Govoreanu, B.
Kaczer, B.
Zhang, W.
Simoen, E.
author2_role author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Imec
KU Leuven
Universidade Estadual Paulista (Unesp)
Liverpool John Moores University
Microsystem and Terahertz Research Center
Ghent University
dc.contributor.author.fl_str_mv Claeys, C.
De Andrade, M. G.C. [UNESP]
Chai, Z.
Fang, W.
Govoreanu, B.
Kaczer, B.
Zhang, W.
Simoen, E.
dc.subject.por.fl_str_mv interface traps
low frequency noise
oxide traps
random telegraph signal
ReRAMs
time lag plot
UTBB SOI
topic interface traps
low frequency noise
oxide traps
random telegraph signal
ReRAMs
time lag plot
UTBB SOI
description Random Telegraph Signal noise has been extensively studied for more than 30 years and gained high interest in recent years due to its importance for scaled down technologies. This review will demonstrate the power of RTS for single defect characterization. Present understanding of the device physics and evolutions in RTS characterization are highlighted. Special attention is given to RTS in memory devices such as DRAMS, ReRAM, planar (2D) and vertical (3D) flash.
publishDate 2016
dc.date.none.fl_str_mv 2016-11-02
2018-12-11T16:45:12Z
2018-12-11T16:45:12Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1109/SBMicro.2016.7731315
SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum.
http://hdl.handle.net/11449/169280
10.1109/SBMicro.2016.7731315
2-s2.0-85007286667
url http://dx.doi.org/10.1109/SBMicro.2016.7731315
http://hdl.handle.net/11449/169280
identifier_str_mv SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum.
10.1109/SBMicro.2016.7731315
2-s2.0-85007286667
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1799965159345618944

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