Electron Emission Properties of Silicon-Rich Silicon Oxide Film Prepared by Reactive Magnetron Sputtering Deposition and Rapid Thermal Annealing

Detalhes bibliográficos
Autor(a) principal: Pang,Yan
Data de Publicação: 2020
Outros Autores: Zhao,Wei, Li,Jie, Yuan,Yuan, Hu,Wenbo, Wu,Shengli, Li,Yongdong, Yang,Shuning
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Materials research (São Carlos. Online)
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392020000100216
Resumo: Abstract Silicon-rich silicon oxide (SRSO) film was prepared through the deposition of SiOx film by radio-frequency reactive magnetron sputtering from a Si target and the subsequent rapid thermal annealing treatment of SiOx film, and planar-type field emission cathodes based on SRSO film were fabricated. The surface morphologies and electron emission properties of the SRSO films deposited under different O2/Ar flow ratios were investigated. The experimental results show that a relatively high O2/Ar flow ratio during the deposition of SiOx film can lead to the formation of cluster structure in the SRSO film prepared, and the electron emission efficiency of SRSO film rises with the increase of electric field applied. An SRSO-film cathode fabricated under an O2/Ar flow ratio of 1:1 with a chamber pressure of 0.21 Pa has an emission current density of 65.61 μA/cm2 and a corresponding emission efficiency of 0.53% at a bias voltage of 18 V, and it exhibits relatively stable emission and fine emission uniformity.
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spelling Electron Emission Properties of Silicon-Rich Silicon Oxide Film Prepared by Reactive Magnetron Sputtering Deposition and Rapid Thermal Annealingsilicon-rich silicon oxide filmfield emission cathodeelectron emission propertymagnetron sputteringAbstract Silicon-rich silicon oxide (SRSO) film was prepared through the deposition of SiOx film by radio-frequency reactive magnetron sputtering from a Si target and the subsequent rapid thermal annealing treatment of SiOx film, and planar-type field emission cathodes based on SRSO film were fabricated. The surface morphologies and electron emission properties of the SRSO films deposited under different O2/Ar flow ratios were investigated. The experimental results show that a relatively high O2/Ar flow ratio during the deposition of SiOx film can lead to the formation of cluster structure in the SRSO film prepared, and the electron emission efficiency of SRSO film rises with the increase of electric field applied. An SRSO-film cathode fabricated under an O2/Ar flow ratio of 1:1 with a chamber pressure of 0.21 Pa has an emission current density of 65.61 μA/cm2 and a corresponding emission efficiency of 0.53% at a bias voltage of 18 V, and it exhibits relatively stable emission and fine emission uniformity.ABM, ABC, ABPol2020-01-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392020000100216Materials Research v.23 n.1 2020reponame:Materials research (São Carlos. Online)instname:Universidade Federal de São Carlos (UFSCAR)instacron:ABM ABC ABPOL10.1590/1980-5373-mr-2019-0401info:eu-repo/semantics/openAccessPang,YanZhao,WeiLi,JieYuan,YuanHu,WenboWu,ShengliLi,YongdongYang,Shuningeng2020-04-15T00:00:00Zoai:scielo:S1516-14392020000100216Revistahttp://www.scielo.br/mrPUBhttps://old.scielo.br/oai/scielo-oai.phpdedz@power.ufscar.br1980-53731516-1439opendoar:2020-04-15T00:00Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)false
dc.title.none.fl_str_mv Electron Emission Properties of Silicon-Rich Silicon Oxide Film Prepared by Reactive Magnetron Sputtering Deposition and Rapid Thermal Annealing
title Electron Emission Properties of Silicon-Rich Silicon Oxide Film Prepared by Reactive Magnetron Sputtering Deposition and Rapid Thermal Annealing
spellingShingle Electron Emission Properties of Silicon-Rich Silicon Oxide Film Prepared by Reactive Magnetron Sputtering Deposition and Rapid Thermal Annealing
Pang,Yan
silicon-rich silicon oxide film
field emission cathode
electron emission property
magnetron sputtering
title_short Electron Emission Properties of Silicon-Rich Silicon Oxide Film Prepared by Reactive Magnetron Sputtering Deposition and Rapid Thermal Annealing
title_full Electron Emission Properties of Silicon-Rich Silicon Oxide Film Prepared by Reactive Magnetron Sputtering Deposition and Rapid Thermal Annealing
title_fullStr Electron Emission Properties of Silicon-Rich Silicon Oxide Film Prepared by Reactive Magnetron Sputtering Deposition and Rapid Thermal Annealing
title_full_unstemmed Electron Emission Properties of Silicon-Rich Silicon Oxide Film Prepared by Reactive Magnetron Sputtering Deposition and Rapid Thermal Annealing
title_sort Electron Emission Properties of Silicon-Rich Silicon Oxide Film Prepared by Reactive Magnetron Sputtering Deposition and Rapid Thermal Annealing
author Pang,Yan
author_facet Pang,Yan
Zhao,Wei
Li,Jie
Yuan,Yuan
Hu,Wenbo
Wu,Shengli
Li,Yongdong
Yang,Shuning
author_role author
author2 Zhao,Wei
Li,Jie
Yuan,Yuan
Hu,Wenbo
Wu,Shengli
Li,Yongdong
Yang,Shuning
author2_role author
author
author
author
author
author
author
dc.contributor.author.fl_str_mv Pang,Yan
Zhao,Wei
Li,Jie
Yuan,Yuan
Hu,Wenbo
Wu,Shengli
Li,Yongdong
Yang,Shuning
dc.subject.por.fl_str_mv silicon-rich silicon oxide film
field emission cathode
electron emission property
magnetron sputtering
topic silicon-rich silicon oxide film
field emission cathode
electron emission property
magnetron sputtering
description Abstract Silicon-rich silicon oxide (SRSO) film was prepared through the deposition of SiOx film by radio-frequency reactive magnetron sputtering from a Si target and the subsequent rapid thermal annealing treatment of SiOx film, and planar-type field emission cathodes based on SRSO film were fabricated. The surface morphologies and electron emission properties of the SRSO films deposited under different O2/Ar flow ratios were investigated. The experimental results show that a relatively high O2/Ar flow ratio during the deposition of SiOx film can lead to the formation of cluster structure in the SRSO film prepared, and the electron emission efficiency of SRSO film rises with the increase of electric field applied. An SRSO-film cathode fabricated under an O2/Ar flow ratio of 1:1 with a chamber pressure of 0.21 Pa has an emission current density of 65.61 μA/cm2 and a corresponding emission efficiency of 0.53% at a bias voltage of 18 V, and it exhibits relatively stable emission and fine emission uniformity.
publishDate 2020
dc.date.none.fl_str_mv 2020-01-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392020000100216
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392020000100216
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/1980-5373-mr-2019-0401
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv ABM, ABC, ABPol
publisher.none.fl_str_mv ABM, ABC, ABPol
dc.source.none.fl_str_mv Materials Research v.23 n.1 2020
reponame:Materials research (São Carlos. Online)
instname:Universidade Federal de São Carlos (UFSCAR)
instacron:ABM ABC ABPOL
instname_str Universidade Federal de São Carlos (UFSCAR)
instacron_str ABM ABC ABPOL
institution ABM ABC ABPOL
reponame_str Materials research (São Carlos. Online)
collection Materials research (São Carlos. Online)
repository.name.fl_str_mv Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)
repository.mail.fl_str_mv dedz@power.ufscar.br
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