Interaction of as impurities with 30° partial dislocations in Si : an ab initio investigation
| Main Author: | |
|---|---|
| Publication Date: | 2002 |
| Format: | Article |
| Download full: | https://hdl.handle.net/20.500.12733/1664840 |
| id |
CAMP_294d1c26c4ce5041e041fdcbff636a8f |
|---|---|
| oai_identifier_str |
oai:https://www.repositorio.unicamp.br/:1215944 |
| network_name_str |
Repositório da Produção Científica e Intelectual da Unicamp |
| title |
Interaction of as impurities with 30° partial dislocations in Si : an ab initio investigation |
| author |
Antonelli, Alex, 1954- |
| topic |
Silício Deslocamentos em cristais Falhas de empilhamento Arsênio Silicon Dislocations in crystals Stacking fault Arsenic Artigo original |
| publishDate |
2002 |
| format |
article |
| url |
https://hdl.handle.net/20.500.12733/1664840 |
| instname_str |
Universidade Estadual de Campinas (UNICAMP) |
| instacron_str |
UNICAMP |