A commercial off-the-shelf pMOS transistor as X-ray and heavy ion detector

• Autor(a) principal: Silveira M.A.G.
• Data de Publicação: 2015
• Outros Autores: Melo M.A.A., Aguiar V.A.P., Rallo A., Santos R.B.B., Medina N.H., Added N., Seixas L.E., Leite F.G., Cunha F.G., Cirne K.H., Giacomini R., de OLIVEIRA J.A.
• Título da fonte: Biblioteca Digital de Teses e Dissertações da FEI
• Texto Completo: https://repositorio.fei.edu.br/handle/FEI/1461

© Published under licence by IOP Publishing Ltd.Recently, p-channel metal-oxide-semiconductor (pMOS) transistors were suggested as fit for the task of detecting and quantifying ionizing radiation dose. Linearity, small detection volume, fast readout, portability, low power consumption and low radiation attenuation are some of the pMOS advantages over PIN diode and thermoluminiscent dosimeters. A hand-held measurement system using a low power commercial off-the-shelf pMOSas the sensor would have a clear advantage due to the lower cost incurred by a standard technological process. In this research work, we tested the commercial device 3N163 regarding its behaviouras an X-ray sensor, as well as its possible application as a heavy-ion detector. To study the radiation effects of X-rays, a XRD-7000 (Shimadzu) X-ray diffraction setup was used to produce 10-keV effective energy photons. Heavy ions tests involved 12C, 16O, 19F, 28Si, 35Cl, 63Cu and 107Ag beams scattered at 15° by a 275 μg/cm2 gold target, which provide LETs (Linear Energy Transfer) from 4 to 40 MeV/mg/cm2. The signal readout was done using a 1 GHz oscilloscope with a 10-Gsamples/s conversion rate, high enough to permit the recording of transient pulses in the drain current. In this case, an ion can cause a current signal proportional to the ion beam used. Through this study it was found that a simple commercial pMOS device can be reliably used as a detector of X-rays as well as heavy ion detector.