Study of proton radiation effects among diamond and rectangular gate MOSFET layouts
| Autor(a) principal: | |
|---|---|
| Data de Publicação: | 2017 |
| Outros Autores: | , , , |
| Tipo de documento: | Artigo |
| Título da fonte: | Biblioteca Digital de Teses e Dissertações da FEI |
| Texto Completo: | https://repositorio.fei.edu.br/handle/FEI/1467 |
Resumo: | 4 |
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SEIXAS, L EFINCO, SSILVEIRA, M A GMEDINA, N HGIMENEZ, S P2019-08-19T23:47:19Z2019-08-19T23:47:19Z2017SEIXAS, L E; FINCO, S; SILVEIRA, M A G; MEDINA, N H; GIMENEZ, S P. Study of proton radiation effects among diamond and rectangular gate MOSFET layouts. Materials Research Express, v. 4, n. 1, p. 015901, 2017.2053-1591https://repositorio.fei.edu.br/handle/FEI/146710.1088/2053-1591/4/1/015901Materials Research ExpressStudy of proton radiation effects among diamond and rectangular gate MOSFET layoutsinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article41015901info:eu-repo/semantics/openAccessreponame:Biblioteca Digital de Teses e Dissertações da FEIinstname:Centro Universitário da Fundação Educacional Inaciana (FEI)instacron:FEIFEI/14672019-08-19 20:47:19.97Biblioteca Digital de Teses e Dissertaçõeshttp://sofia.fei.edu.br/pergamum/biblioteca/PRI |
| dc.title.pt_BR.fl_str_mv |
Study of proton radiation effects among diamond and rectangular gate MOSFET layouts |
| title |
Study of proton radiation effects among diamond and rectangular gate MOSFET layouts |
| spellingShingle |
Study of proton radiation effects among diamond and rectangular gate MOSFET layouts SEIXAS, L E |
| title_short |
Study of proton radiation effects among diamond and rectangular gate MOSFET layouts |
| title_full |
Study of proton radiation effects among diamond and rectangular gate MOSFET layouts |
| title_fullStr |
Study of proton radiation effects among diamond and rectangular gate MOSFET layouts |
| title_full_unstemmed |
Study of proton radiation effects among diamond and rectangular gate MOSFET layouts |
| title_sort |
Study of proton radiation effects among diamond and rectangular gate MOSFET layouts |
| author |
SEIXAS, L E |
| author_facet |
SEIXAS, L E FINCO, S SILVEIRA, M A G MEDINA, N H GIMENEZ, S P |
| author_role |
author |
| author2 |
FINCO, S SILVEIRA, M A G MEDINA, N H GIMENEZ, S P |
| author2_role |
author author author author |
| dc.contributor.author.fl_str_mv |
SEIXAS, L E FINCO, S SILVEIRA, M A G MEDINA, N H GIMENEZ, S P |
| description |
4 |
| publishDate |
2017 |
| dc.date.issued.fl_str_mv |
2017 |
| dc.date.accessioned.fl_str_mv |
2019-08-19T23:47:19Z |
| dc.date.available.fl_str_mv |
2019-08-19T23:47:19Z |
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info:eu-repo/semantics/publishedVersion |
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info:eu-repo/semantics/article |
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article |
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publishedVersion |
| dc.identifier.citation.fl_str_mv |
SEIXAS, L E; FINCO, S; SILVEIRA, M A G; MEDINA, N H; GIMENEZ, S P. Study of proton radiation effects among diamond and rectangular gate MOSFET layouts. Materials Research Express, v. 4, n. 1, p. 015901, 2017. |
| dc.identifier.uri.fl_str_mv |
https://repositorio.fei.edu.br/handle/FEI/1467 |
| dc.identifier.issn.none.fl_str_mv |
2053-1591 |
| dc.identifier.doi.none.fl_str_mv |
10.1088/2053-1591/4/1/015901 |
| identifier_str_mv |
SEIXAS, L E; FINCO, S; SILVEIRA, M A G; MEDINA, N H; GIMENEZ, S P. Study of proton radiation effects among diamond and rectangular gate MOSFET layouts. Materials Research Express, v. 4, n. 1, p. 015901, 2017. 2053-1591 10.1088/2053-1591/4/1/015901 |
| url |
https://repositorio.fei.edu.br/handle/FEI/1467 |
| dc.relation.ispartof.none.fl_str_mv |
Materials Research Express |
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info:eu-repo/semantics/openAccess |
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openAccess |
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Centro Universitário da Fundação Educacional Inaciana (FEI) |
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FEI |
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FEI |
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Biblioteca Digital de Teses e Dissertações da FEI |
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Biblioteca Digital de Teses e Dissertações da FEI |
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