Raman study of ion-induced defects in N-layer graphene

Detalhes bibliográficos
Autor(a) principal: Vasconcelos, Ado Jorio de
Data de Publicação: 2010
Outros Autores: Lucchese, Márcia Maria, Stavale Júnior, Fernando Loureiro, Ferreira, Erlon Henrique Martins, Moutinho, Marcus Vinicius de Oliveira, Capaz, Rodrigo Barbosa, Achete, Carlos Alberto
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional do INMETRO
Texto Completo: http://hdl.handle.net/10926/1412
Resumo: Raman scattering is used to study the effect of low energy (90 eV) Ar+ ion bombardment in graphene samples as a function of the number of layers N. The evolution of the intensity ratio between the G band (1585 cm−1) and the disorder-induced D band (1345 cm−1) with ion fluence is determined for mono-, bi-, tri- and ∼50-layer graphene samples, providing a spectroscopy-based method to study the penetration of these low energy Ar+ ions in AB Bernal stacked graphite, and how they affect the graphene sheets. The results clearly depend on the number of layers. We also analyze the evolution of the overall integrated Raman intensity and the integrated intensity for disorder-induced versus Raman-allowed peaks.
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spelling info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleRaman study of ion-induced defects in N-layer graphene20102012-02-01T11:55:07Z2012-02-01T11:55:07ZRaman scattering is used to study the effect of low energy (90 eV) Ar+ ion bombardment in graphene samples as a function of the number of layers N. The evolution of the intensity ratio between the G band (1585 cm−1) and the disorder-induced D band (1345 cm−1) with ion fluence is determined for mono-, bi-, tri- and ∼50-layer graphene samples, providing a spectroscopy-based method to study the penetration of these low energy Ar+ ions in AB Bernal stacked graphite, and how they affect the graphene sheets. The results clearly depend on the number of layers. We also analyze the evolution of the overall integrated Raman intensity and the integrated intensity for disorder-induced versus Raman-allowed peaks.6 p. : il.Submitted by Josivania Barbosa (josi.inmetro@yahoo.com.br) on 2012-01-31T13:36:32Z No. of bitstreams: 1 2010_erlonjphy.pdf: 316947 bytes, checksum: 65233126afea47c31e80fdad7082c958 (MD5)Approved for entry into archive by Catarina Soares(cfsoares@inmetro.gov.br) on 2012-02-01T11:55:07Z (GMT) No. of bitstreams: 1 2010_erlonjphy.pdf: 316947 bytes, checksum: 65233126afea47c31e80fdad7082c958 (MD5)Made available in DSpace on 2012-02-01T11:55:07Z (GMT). No. of bitstreams: 1 2010_erlonjphy.pdf: 316947 bytes, checksum: 65233126afea47c31e80fdad7082c958 (MD5) Previous issue date: 2010enghttp://hdl.handle.net/10926/1412DMD_hdl_10926/1412JORIO, Ado et al. Raman study of ion-induced defects in -layer graphene. Journal of Physics. Condensed Matter, v. 22, p. 334204, 2010.Vasconcelos, Ado Jorio deLucchese, Márcia MariaStavale Júnior, Fernando LoureiroFerreira, Erlon Henrique MartinsMoutinho, Marcus Vinicius de OliveiraCapaz, Rodrigo BarbosaAchete, Carlos Albertoinfo:eu-repo/semantics/openAccessreponame:Repositório Institucional do INMETROinstname:Instituto Nacional de Metrologia, Qualidade e Tecnologia (INMETRO)instacron:INMETROJorio_2010.pdf.txthttp://xrepo01s.inmetro.gov.br/bitstream/10926/1412/6/Jorio_2010.pdf.txttext/plain20852http://xrepo01s.inmetro.gov.br/bitstream/10926/1412/6/Jorio_2010.pdf.txtff432829efe639867834ccda2eac0f5eMD510926_1412_6Jorio_2010.pdfhttp://xrepo01s.inmetro.gov.br/bitstream/10926/1412/1/Jorio_2010.pdfapplication/pdf316947http://xrepo01s.inmetro.gov.br/bitstream/10926/1412/1/Jorio_2010.pdf65233126afea47c31e80fdad7082c958MD510926_1412_12024-04-22T15:42:59Zoai:xrepo01s.inmetro.gov.br:10926/1412Repositório de Publicaçõeshttp://repositorios.inmetro.gov.br/oai/requestopendoar:2012-10-26T15:55:30Repositório Institucional do INMETRO - Instituto Nacional de Metrologia, Qualidade e Tecnologia (INMETRO)false
dc.title.none.fl_str_mv Raman study of ion-induced defects in N-layer graphene
title Raman study of ion-induced defects in N-layer graphene
spellingShingle Raman study of ion-induced defects in N-layer graphene
Vasconcelos, Ado Jorio de
title_short Raman study of ion-induced defects in N-layer graphene
title_full Raman study of ion-induced defects in N-layer graphene
title_fullStr Raman study of ion-induced defects in N-layer graphene
title_full_unstemmed Raman study of ion-induced defects in N-layer graphene
title_sort Raman study of ion-induced defects in N-layer graphene
author Vasconcelos, Ado Jorio de
author_facet Vasconcelos, Ado Jorio de
Lucchese, Márcia Maria
Stavale Júnior, Fernando Loureiro
Ferreira, Erlon Henrique Martins
Moutinho, Marcus Vinicius de Oliveira
Capaz, Rodrigo Barbosa
Achete, Carlos Alberto
author_role author
author2 Lucchese, Márcia Maria
Stavale Júnior, Fernando Loureiro
Ferreira, Erlon Henrique Martins
Moutinho, Marcus Vinicius de Oliveira
Capaz, Rodrigo Barbosa
Achete, Carlos Alberto
author2_role author
author
author
author
author
author
dc.contributor.author.fl_str_mv Vasconcelos, Ado Jorio de
Lucchese, Márcia Maria
Stavale Júnior, Fernando Loureiro
Ferreira, Erlon Henrique Martins
Moutinho, Marcus Vinicius de Oliveira
Capaz, Rodrigo Barbosa
Achete, Carlos Alberto
description Raman scattering is used to study the effect of low energy (90 eV) Ar+ ion bombardment in graphene samples as a function of the number of layers N. The evolution of the intensity ratio between the G band (1585 cm−1) and the disorder-induced D band (1345 cm−1) with ion fluence is determined for mono-, bi-, tri- and ∼50-layer graphene samples, providing a spectroscopy-based method to study the penetration of these low energy Ar+ ions in AB Bernal stacked graphite, and how they affect the graphene sheets. The results clearly depend on the number of layers. We also analyze the evolution of the overall integrated Raman intensity and the integrated intensity for disorder-induced versus Raman-allowed peaks.
publishDate 2010
dc.date.issued.fl_str_mv 2010
dc.date.available.fl_str_mv 2012-02-01T11:55:07Z
dc.date.accessioned.fl_str_mv 2012-02-01T11:55:07Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10926/1412
DMD_hdl_10926/1412
dc.identifier.citation.fl_str_mv JORIO, Ado et al. Raman study of ion-induced defects in -layer graphene. Journal of Physics. Condensed Matter, v. 22, p. 334204, 2010.
url http://hdl.handle.net/10926/1412
identifier_str_mv DMD_hdl_10926/1412
JORIO, Ado et al. Raman study of ion-induced defects in -layer graphene. Journal of Physics. Condensed Matter, v. 22, p. 334204, 2010.
dc.language.iso.fl_str_mv eng
language eng
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.bitstream.fl_str_mv text/plain
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instname:Instituto Nacional de Metrologia, Qualidade e Tecnologia (INMETRO)
instacron:INMETRO
instname_str Instituto Nacional de Metrologia, Qualidade e Tecnologia (INMETRO)
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institution INMETRO
reponame_str Repositório Institucional do INMETRO
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repository.name.fl_str_mv Repositório Institucional do INMETRO - Instituto Nacional de Metrologia, Qualidade e Tecnologia (INMETRO)
repository.mail.fl_str_mv
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