Verification of angular dependence in mosfet detector

Detalhes bibliográficos
Autor(a) principal: SOUZA, CLAYTON H.
Data de Publicação: 2018
Outros Autores: SHORTO, JULIAN M.B., SIQUEIRA, PAULO T.D., NUNES, MAIRA G., SILVA JUNIOR, IREMAR A., YORIYAZ, HELIO, INTERNATIONAL NUCLEAR ATLANTIC CONFERENCE
Tipo de documento: Artigo de conferência
Título da fonte: Repositório Institucional do IPEN
Texto Completo: http://repositorio.ipen.br/handle/123456789/28228
Resumo: In vivo dosimetry is an essential tool for quality assurance programs, being a procedure commonly performed with thermoluminescent dosimeters (TLDs) or diodes. However, a type of dosimeter that has increasing popularity in recent years is the metal-oxide-semiconductor field effect transistor (MOSFET) detector. MOSFET dosimeters fulfill all the necessary characteristics to realize in vivo dosimetry since it has a small size, good precision and feasibility of measurement, as well as easy handling. Nevertheless, its true differential is to allow reading of the dose in real time, enabling immediate intervention in the correction of physical parameters deviations and anticipation of small anatomical changes in a patient during treatment. In order for MOSFET dosimeter to be better accepted in clinical routine, information reporting performance should be available frequently. For this reason, this work proposes to verify reproducibility and angular dependence of a standard sensitivity MOSFET dosimeter (TN-502RD-H) for Cs-137 and Co-60 sources. Experimental data were satisfactory and MOSFET dosimeter presented a reproducibility of 3.3% and 2.7% (1 SD) for Cs-137 and Co-60 sources, respectively. In addition, an angular dependence of up to 6.1% and 16.3% for both radioactive sources, respectively. It is conclusive that MOSFET dosimeter TN-502RD-H has satisfactory reproducibility and a considerable angular dependence, mainly for the Co-60 source. This means that although precise measurements, special attention must be taken for applications in certain anatomical regions in a patient.
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spelling 2018-01-05T11:30:44Z2018-01-05T11:30:44ZOctober 22-27, 2017http://repositorio.ipen.br/handle/123456789/28228In vivo dosimetry is an essential tool for quality assurance programs, being a procedure commonly performed with thermoluminescent dosimeters (TLDs) or diodes. However, a type of dosimeter that has increasing popularity in recent years is the metal-oxide-semiconductor field effect transistor (MOSFET) detector. MOSFET dosimeters fulfill all the necessary characteristics to realize in vivo dosimetry since it has a small size, good precision and feasibility of measurement, as well as easy handling. Nevertheless, its true differential is to allow reading of the dose in real time, enabling immediate intervention in the correction of physical parameters deviations and anticipation of small anatomical changes in a patient during treatment. In order for MOSFET dosimeter to be better accepted in clinical routine, information reporting performance should be available frequently. For this reason, this work proposes to verify reproducibility and angular dependence of a standard sensitivity MOSFET dosimeter (TN-502RD-H) for Cs-137 and Co-60 sources. Experimental data were satisfactory and MOSFET dosimeter presented a reproducibility of 3.3% and 2.7% (1 SD) for Cs-137 and Co-60 sources, respectively. In addition, an angular dependence of up to 6.1% and 16.3% for both radioactive sources, respectively. It is conclusive that MOSFET dosimeter TN-502RD-H has satisfactory reproducibility and a considerable angular dependence, mainly for the Co-60 source. This means that although precise measurements, special attention must be taken for applications in certain anatomical regions in a patient.Submitted by Marco Antonio Oliveira da Silva (maosilva@ipen.br) on 2018-01-05T11:30:44Z No. of bitstreams: 1 24053.pdf: 567547 bytes, checksum: 3791b38c8bedf85763ca5bd6e2f0110b (MD5)Made available in DSpace on 2018-01-05T11:30:44Z (GMT). No. of bitstreams: 1 24053.pdf: 567547 bytes, checksum: 3791b38c8bedf85763ca5bd6e2f0110b (MD5)Associa????o Brasileira de Energia Nuclearcesium 137cobalt 60dosemetersdosimetryexperimental datain vivomosfetperformanceVerification of angular dependence in mosfet detectorinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObjectINACIRio de Janeiro, RJBelo Horizonte, MGSOUZA, CLAYTON H.SHORTO, JULIAN M.B.SIQUEIRA, PAULO T.D.NUNES, MAIRA G.SILVA JUNIOR, IREMAR A.YORIYAZ, HELIOINTERNATIONAL NUCLEAR ATLANTIC CONFERENCEinfo:eu-repo/semantics/openAccessreponame:Repositório Institucional do IPENinstname:Instituto de Pesquisas Energéticas e Nucleares (IPEN)instacron:IPEN240532017SOUZA, CLAYTON H.SHORTO, JULIAN M.B.SIQUEIRA, PAULO T.D.NUNES, MAIRA G.SILVA JUNIOR, IREMAR A.YORIYAZ, HELIO18-01Proceedings1435896909683897771980SOUZA, CLAYTON H.:14358:-1:SSHORTO, JULIAN M.B.:9690:420:NSIQUEIRA, PAULO T.D.:968:420:NNUNES, MAIRA G.:3897:420:NSILVA JUNIOR, IREMAR A.:7719:330:NYORIYAZ, HELIO:80:420:NORIGINAL24053.pdf24053.pdfapplication/pdf567547http://repositorio.ipen.br/bitstream/123456789/28228/1/24053.pdf3791b38c8bedf85763ca5bd6e2f0110bMD51LICENSElicense.txtlicense.txttext/plain; charset=utf-81748http://repositorio.ipen.br/bitstream/123456789/28228/2/license.txt8a4605be74aa9ea9d79846c1fba20a33MD52123456789/282282022-03-25 14:33:06.481oai:repositorio.ipen.br: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Repositório InstitucionalPUBhttp://repositorio.ipen.br/oai/requestbibl@ipen.bropendoar:45102022-03-25T14:33:06Repositório Institucional do IPEN - Instituto de Pesquisas Energéticas e Nucleares (IPEN)false
dc.title.pt_BR.fl_str_mv Verification of angular dependence in mosfet detector
title Verification of angular dependence in mosfet detector
spellingShingle Verification of angular dependence in mosfet detector
SOUZA, CLAYTON H.
cesium 137
cobalt 60
dosemeters
dosimetry
experimental data
in vivo
mosfet
performance
title_short Verification of angular dependence in mosfet detector
title_full Verification of angular dependence in mosfet detector
title_fullStr Verification of angular dependence in mosfet detector
title_full_unstemmed Verification of angular dependence in mosfet detector
title_sort Verification of angular dependence in mosfet detector
author SOUZA, CLAYTON H.
author_facet SOUZA, CLAYTON H.
SHORTO, JULIAN M.B.
SIQUEIRA, PAULO T.D.
NUNES, MAIRA G.
SILVA JUNIOR, IREMAR A.
YORIYAZ, HELIO
INTERNATIONAL NUCLEAR ATLANTIC CONFERENCE
author_role author
author2 SHORTO, JULIAN M.B.
SIQUEIRA, PAULO T.D.
NUNES, MAIRA G.
SILVA JUNIOR, IREMAR A.
YORIYAZ, HELIO
INTERNATIONAL NUCLEAR ATLANTIC CONFERENCE
author2_role author
author
author
author
author
author
dc.contributor.author.fl_str_mv SOUZA, CLAYTON H.
SHORTO, JULIAN M.B.
SIQUEIRA, PAULO T.D.
NUNES, MAIRA G.
SILVA JUNIOR, IREMAR A.
YORIYAZ, HELIO
INTERNATIONAL NUCLEAR ATLANTIC CONFERENCE
dc.subject.por.fl_str_mv cesium 137
cobalt 60
dosemeters
dosimetry
experimental data
in vivo
mosfet
performance
topic cesium 137
cobalt 60
dosemeters
dosimetry
experimental data
in vivo
mosfet
performance
description In vivo dosimetry is an essential tool for quality assurance programs, being a procedure commonly performed with thermoluminescent dosimeters (TLDs) or diodes. However, a type of dosimeter that has increasing popularity in recent years is the metal-oxide-semiconductor field effect transistor (MOSFET) detector. MOSFET dosimeters fulfill all the necessary characteristics to realize in vivo dosimetry since it has a small size, good precision and feasibility of measurement, as well as easy handling. Nevertheless, its true differential is to allow reading of the dose in real time, enabling immediate intervention in the correction of physical parameters deviations and anticipation of small anatomical changes in a patient during treatment. In order for MOSFET dosimeter to be better accepted in clinical routine, information reporting performance should be available frequently. For this reason, this work proposes to verify reproducibility and angular dependence of a standard sensitivity MOSFET dosimeter (TN-502RD-H) for Cs-137 and Co-60 sources. Experimental data were satisfactory and MOSFET dosimeter presented a reproducibility of 3.3% and 2.7% (1 SD) for Cs-137 and Co-60 sources, respectively. In addition, an angular dependence of up to 6.1% and 16.3% for both radioactive sources, respectively. It is conclusive that MOSFET dosimeter TN-502RD-H has satisfactory reproducibility and a considerable angular dependence, mainly for the Co-60 source. This means that although precise measurements, special attention must be taken for applications in certain anatomical regions in a patient.
publishDate 2018
dc.date.evento.pt_BR.fl_str_mv October 22-27, 2017
dc.date.accessioned.fl_str_mv 2018-01-05T11:30:44Z
dc.date.available.fl_str_mv 2018-01-05T11:30:44Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
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dc.identifier.uri.fl_str_mv http://repositorio.ipen.br/handle/123456789/28228
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dc.publisher.none.fl_str_mv Associa????o Brasileira de Energia Nuclear
publisher.none.fl_str_mv Associa????o Brasileira de Energia Nuclear
dc.source.none.fl_str_mv reponame:Repositório Institucional do IPEN
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