Verification of angular dependence in mosfet detector
Autor(a) principal: | |
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Data de Publicação: | 2018 |
Outros Autores: | , , , , , |
Tipo de documento: | Artigo de conferência |
Título da fonte: | Repositório Institucional do IPEN |
Texto Completo: | http://repositorio.ipen.br/handle/123456789/28228 |
Resumo: | In vivo dosimetry is an essential tool for quality assurance programs, being a procedure commonly performed with thermoluminescent dosimeters (TLDs) or diodes. However, a type of dosimeter that has increasing popularity in recent years is the metal-oxide-semiconductor field effect transistor (MOSFET) detector. MOSFET dosimeters fulfill all the necessary characteristics to realize in vivo dosimetry since it has a small size, good precision and feasibility of measurement, as well as easy handling. Nevertheless, its true differential is to allow reading of the dose in real time, enabling immediate intervention in the correction of physical parameters deviations and anticipation of small anatomical changes in a patient during treatment. In order for MOSFET dosimeter to be better accepted in clinical routine, information reporting performance should be available frequently. For this reason, this work proposes to verify reproducibility and angular dependence of a standard sensitivity MOSFET dosimeter (TN-502RD-H) for Cs-137 and Co-60 sources. Experimental data were satisfactory and MOSFET dosimeter presented a reproducibility of 3.3% and 2.7% (1 SD) for Cs-137 and Co-60 sources, respectively. In addition, an angular dependence of up to 6.1% and 16.3% for both radioactive sources, respectively. It is conclusive that MOSFET dosimeter TN-502RD-H has satisfactory reproducibility and a considerable angular dependence, mainly for the Co-60 source. This means that although precise measurements, special attention must be taken for applications in certain anatomical regions in a patient. |
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2018-01-05T11:30:44Z2018-01-05T11:30:44ZOctober 22-27, 2017http://repositorio.ipen.br/handle/123456789/28228In vivo dosimetry is an essential tool for quality assurance programs, being a procedure commonly performed with thermoluminescent dosimeters (TLDs) or diodes. However, a type of dosimeter that has increasing popularity in recent years is the metal-oxide-semiconductor field effect transistor (MOSFET) detector. MOSFET dosimeters fulfill all the necessary characteristics to realize in vivo dosimetry since it has a small size, good precision and feasibility of measurement, as well as easy handling. Nevertheless, its true differential is to allow reading of the dose in real time, enabling immediate intervention in the correction of physical parameters deviations and anticipation of small anatomical changes in a patient during treatment. In order for MOSFET dosimeter to be better accepted in clinical routine, information reporting performance should be available frequently. For this reason, this work proposes to verify reproducibility and angular dependence of a standard sensitivity MOSFET dosimeter (TN-502RD-H) for Cs-137 and Co-60 sources. Experimental data were satisfactory and MOSFET dosimeter presented a reproducibility of 3.3% and 2.7% (1 SD) for Cs-137 and Co-60 sources, respectively. In addition, an angular dependence of up to 6.1% and 16.3% for both radioactive sources, respectively. It is conclusive that MOSFET dosimeter TN-502RD-H has satisfactory reproducibility and a considerable angular dependence, mainly for the Co-60 source. This means that although precise measurements, special attention must be taken for applications in certain anatomical regions in a patient.Submitted by Marco Antonio Oliveira da Silva (maosilva@ipen.br) on 2018-01-05T11:30:44Z No. of bitstreams: 1 24053.pdf: 567547 bytes, checksum: 3791b38c8bedf85763ca5bd6e2f0110b (MD5)Made available in DSpace on 2018-01-05T11:30:44Z (GMT). No. of bitstreams: 1 24053.pdf: 567547 bytes, checksum: 3791b38c8bedf85763ca5bd6e2f0110b (MD5)Associa????o Brasileira de Energia Nuclearcesium 137cobalt 60dosemetersdosimetryexperimental datain vivomosfetperformanceVerification of angular dependence in mosfet detectorinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObjectINACIRio de Janeiro, RJBelo Horizonte, MGSOUZA, CLAYTON H.SHORTO, JULIAN M.B.SIQUEIRA, PAULO T.D.NUNES, MAIRA G.SILVA JUNIOR, IREMAR A.YORIYAZ, HELIOINTERNATIONAL NUCLEAR ATLANTIC CONFERENCEinfo:eu-repo/semantics/openAccessreponame:Repositório Institucional do IPENinstname:Instituto de Pesquisas Energéticas e Nucleares (IPEN)instacron:IPEN240532017SOUZA, CLAYTON H.SHORTO, JULIAN M.B.SIQUEIRA, PAULO T.D.NUNES, MAIRA G.SILVA JUNIOR, IREMAR A.YORIYAZ, HELIO18-01Proceedings1435896909683897771980SOUZA, CLAYTON H.:14358:-1:SSHORTO, JULIAN M.B.:9690:420:NSIQUEIRA, PAULO T.D.:968:420:NNUNES, MAIRA G.:3897:420:NSILVA JUNIOR, IREMAR A.:7719:330:NYORIYAZ, HELIO:80:420:NORIGINAL24053.pdf24053.pdfapplication/pdf567547http://repositorio.ipen.br/bitstream/123456789/28228/1/24053.pdf3791b38c8bedf85763ca5bd6e2f0110bMD51LICENSElicense.txtlicense.txttext/plain; charset=utf-81748http://repositorio.ipen.br/bitstream/123456789/28228/2/license.txt8a4605be74aa9ea9d79846c1fba20a33MD52123456789/282282022-03-25 14:33:06.481oai:repositorio.ipen.br:123456789/28228Tk9URTogUExBQ0UgWU9VUiBPV04gTElDRU5TRSBIRVJFClRoaXMgc2FtcGxlIGxpY2Vuc2UgaXMgcHJvdmlkZWQgZm9yIGluZm9ybWF0aW9uYWwgcHVycG9zZXMgb25seS4KCk5PTi1FWENMVVNJVkUgRElTVFJJQlVUSU9OIExJQ0VOU0UKCkJ5IHNpZ25pbmcgYW5kIHN1Ym1pdHRpbmcgdGhpcyBsaWNlbnNlLCB5b3UgKHRoZSBhdXRob3Iocykgb3IgY29weXJpZ2h0Cm93bmVyKSBncmFudHMgdG8gRFNwYWNlIFVuaXZlcnNpdHkgKERTVSkgdGhlIG5vbi1leGNsdXNpdmUgcmlnaHQgdG8gcmVwcm9kdWNlLAp0cmFuc2xhdGUgKGFzIGRlZmluZWQgYmVsb3cpLCBhbmQvb3IgZGlzdHJpYnV0ZSB5b3VyIHN1Ym1pc3Npb24gKGluY2x1ZGluZwp0aGUgYWJzdHJhY3QpIHdvcmxkd2lkZSBpbiBwcmludCBhbmQgZWxlY3Ryb25pYyBmb3JtYXQgYW5kIGluIGFueSBtZWRpdW0sCmluY2x1ZGluZyBidXQgbm90IGxpbWl0ZWQgdG8gYXVkaW8gb3IgdmlkZW8uCgpZb3UgYWdyZWUgdGhhdCBEU1UgbWF5LCB3aXRob3V0IGNoYW5naW5nIHRoZSBjb250ZW50LCB0cmFuc2xhdGUgdGhlCnN1Ym1pc3Npb24gdG8gYW55IG1lZGl1bSBvciBmb3JtYXQgZm9yIHRoZSBwdXJwb3NlIG9mIHByZXNlcnZhdGlvbi4KCllvdSBhbHNvIGFncmVlIHRoYXQgRFNVIG1heSBrZWVwIG1vcmUgdGhhbiBvbmUgY29weSBvZiB0aGlzIHN1Ym1pc3Npb24gZm9yCnB1cnBvc2VzIG9mIHNlY3VyaXR5LCBiYWNrLXVwIGFuZCBwcmVzZXJ2YXRpb24uCgpZb3UgcmVwcmVzZW50IHRoYXQgdGhlIHN1Ym1pc3Npb24gaXMgeW91ciBvcmlnaW5hbCB3b3JrLCBhbmQgdGhhdCB5b3UgaGF2ZQp0aGUgcmlnaHQgdG8gZ3JhbnQgdGhlIHJpZ2h0cyBjb250YWluZWQgaW4gdGhpcyBsaWNlbnNlLiBZb3UgYWxzbyByZXByZXNlbnQKdGhhdCB5b3VyIHN1Ym1pc3Npb24gZG9lcyBub3QsIHRvIHRoZSBiZXN0IG9mIHlvdXIga25vd2xlZGdlLCBpbmZyaW5nZSB1cG9uCmFueW9uZSdzIGNvcHlyaWdodC4KCklmIHRoZSBzdWJtaXNzaW9uIGNvbnRhaW5zIG1hdGVyaWFsIGZvciB3aGljaCB5b3UgZG8gbm90IGhvbGQgY29weXJpZ2h0LAp5b3UgcmVwcmVzZW50IHRoYXQgeW91IGhhdmUgb2J0YWluZWQgdGhlIHVucmVzdHJpY3RlZCBwZXJtaXNzaW9uIG9mIHRoZQpjb3B5cmlnaHQgb3duZXIgdG8gZ3JhbnQgRFNVIHRoZSByaWdodHMgcmVxdWlyZWQgYnkgdGhpcyBsaWNlbnNlLCBhbmQgdGhhdApzdWNoIHRoaXJkLXBhcnR5IG93bmVkIG1hdGVyaWFsIGlzIGNsZWFybHkgaWRlbnRpZmllZCBhbmQgYWNrbm93bGVkZ2VkCndpdGhpbiB0aGUgdGV4dCBvciBjb250ZW50IG9mIHRoZSBzdWJtaXNzaW9uLgoKSUYgVEhFIFNVQk1JU1NJT04gSVMgQkFTRUQgVVBPTiBXT1JLIFRIQVQgSEFTIEJFRU4gU1BPTlNPUkVEIE9SIFNVUFBPUlRFRApCWSBBTiBBR0VOQ1kgT1IgT1JHQU5JWkFUSU9OIE9USEVSIFRIQU4gRFNVLCBZT1UgUkVQUkVTRU5UIFRIQVQgWU9VIEhBVkUKRlVMRklMTEVEIEFOWSBSSUdIVCBPRiBSRVZJRVcgT1IgT1RIRVIgT0JMSUdBVElPTlMgUkVRVUlSRUQgQlkgU1VDSApDT05UUkFDVCBPUiBBR1JFRU1FTlQuCgpEU1Ugd2lsbCBjbGVhcmx5IGlkZW50aWZ5IHlvdXIgbmFtZShzKSBhcyB0aGUgYXV0aG9yKHMpIG9yIG93bmVyKHMpIG9mIHRoZQpzdWJtaXNzaW9uLCBhbmQgd2lsbCBub3QgbWFrZSBhbnkgYWx0ZXJhdGlvbiwgb3RoZXIgdGhhbiBhcyBhbGxvd2VkIGJ5IHRoaXMKbGljZW5zZSwgdG8geW91ciBzdWJtaXNzaW9uLgo=Repositório InstitucionalPUBhttp://repositorio.ipen.br/oai/requestbibl@ipen.bropendoar:45102022-03-25T14:33:06Repositório Institucional do IPEN - Instituto de Pesquisas Energéticas e Nucleares (IPEN)false |
dc.title.pt_BR.fl_str_mv |
Verification of angular dependence in mosfet detector |
title |
Verification of angular dependence in mosfet detector |
spellingShingle |
Verification of angular dependence in mosfet detector SOUZA, CLAYTON H. cesium 137 cobalt 60 dosemeters dosimetry experimental data in vivo mosfet performance |
title_short |
Verification of angular dependence in mosfet detector |
title_full |
Verification of angular dependence in mosfet detector |
title_fullStr |
Verification of angular dependence in mosfet detector |
title_full_unstemmed |
Verification of angular dependence in mosfet detector |
title_sort |
Verification of angular dependence in mosfet detector |
author |
SOUZA, CLAYTON H. |
author_facet |
SOUZA, CLAYTON H. SHORTO, JULIAN M.B. SIQUEIRA, PAULO T.D. NUNES, MAIRA G. SILVA JUNIOR, IREMAR A. YORIYAZ, HELIO INTERNATIONAL NUCLEAR ATLANTIC CONFERENCE |
author_role |
author |
author2 |
SHORTO, JULIAN M.B. SIQUEIRA, PAULO T.D. NUNES, MAIRA G. SILVA JUNIOR, IREMAR A. YORIYAZ, HELIO INTERNATIONAL NUCLEAR ATLANTIC CONFERENCE |
author2_role |
author author author author author author |
dc.contributor.author.fl_str_mv |
SOUZA, CLAYTON H. SHORTO, JULIAN M.B. SIQUEIRA, PAULO T.D. NUNES, MAIRA G. SILVA JUNIOR, IREMAR A. YORIYAZ, HELIO INTERNATIONAL NUCLEAR ATLANTIC CONFERENCE |
dc.subject.por.fl_str_mv |
cesium 137 cobalt 60 dosemeters dosimetry experimental data in vivo mosfet performance |
topic |
cesium 137 cobalt 60 dosemeters dosimetry experimental data in vivo mosfet performance |
description |
In vivo dosimetry is an essential tool for quality assurance programs, being a procedure commonly performed with thermoluminescent dosimeters (TLDs) or diodes. However, a type of dosimeter that has increasing popularity in recent years is the metal-oxide-semiconductor field effect transistor (MOSFET) detector. MOSFET dosimeters fulfill all the necessary characteristics to realize in vivo dosimetry since it has a small size, good precision and feasibility of measurement, as well as easy handling. Nevertheless, its true differential is to allow reading of the dose in real time, enabling immediate intervention in the correction of physical parameters deviations and anticipation of small anatomical changes in a patient during treatment. In order for MOSFET dosimeter to be better accepted in clinical routine, information reporting performance should be available frequently. For this reason, this work proposes to verify reproducibility and angular dependence of a standard sensitivity MOSFET dosimeter (TN-502RD-H) for Cs-137 and Co-60 sources. Experimental data were satisfactory and MOSFET dosimeter presented a reproducibility of 3.3% and 2.7% (1 SD) for Cs-137 and Co-60 sources, respectively. In addition, an angular dependence of up to 6.1% and 16.3% for both radioactive sources, respectively. It is conclusive that MOSFET dosimeter TN-502RD-H has satisfactory reproducibility and a considerable angular dependence, mainly for the Co-60 source. This means that although precise measurements, special attention must be taken for applications in certain anatomical regions in a patient. |
publishDate |
2018 |
dc.date.evento.pt_BR.fl_str_mv |
October 22-27, 2017 |
dc.date.accessioned.fl_str_mv |
2018-01-05T11:30:44Z |
dc.date.available.fl_str_mv |
2018-01-05T11:30:44Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://repositorio.ipen.br/handle/123456789/28228 |
url |
http://repositorio.ipen.br/handle/123456789/28228 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.coverage.pt_BR.fl_str_mv |
I |
dc.publisher.none.fl_str_mv |
Associa????o Brasileira de Energia Nuclear |
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Associa????o Brasileira de Energia Nuclear |
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