Phase selective growth of Cu12Sb4S13 and Cu3SbS4 thin films by chalcogenization of simultaneous sputtered metal precursors
Autor(a) principal: | |
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Data de Publicação: | 2019 |
Outros Autores: | , , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/10400.22/17154 |
Resumo: | In this work, we present a procedure to grow Cu12Sb4S13 and Cu3SbS4 thin films consisting of the deposition of simultaneously sputtered metal precursors followed by a annealing treatment in a sulphur atmosphere. The selection of the ternary phase is performed by adjusting the sulphur evaporation temperature in the chalcogenization process. It is shown that for a sulphur evaporation temperature of 140 ∘C the predominant phase is Cu12Sb4S13 while for 180 ∘C the predominant phase is Cu3SbS4. In order to ensure precursor composition homogeneity, the Cu-Sb metallic precursors are deposited simultaneously by RF magnetron sputtering using adjustable segmented targets. The morphological characterization of the films was made by scanning electron microscopy and the composition was analysed by energy dispersive spectroscopy. The structural analysis and phase identification were performed by X-ray diffraction and Raman scattering. The optical properties were studied on films deposited directly on bare glass and the optical bandgap energies of 1.47 eV and 0.89 eV for Cu12Sb4S13 and Cu3SbS4, respectively, were determined. |
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7160 |
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Phase selective growth of Cu12Sb4S13 and Cu3SbS4 thin films by chalcogenization of simultaneous sputtered metal precursorsSulfosaltThin filmsRF magnetron sputteringChalcogenizationIn this work, we present a procedure to grow Cu12Sb4S13 and Cu3SbS4 thin films consisting of the deposition of simultaneously sputtered metal precursors followed by a annealing treatment in a sulphur atmosphere. The selection of the ternary phase is performed by adjusting the sulphur evaporation temperature in the chalcogenization process. It is shown that for a sulphur evaporation temperature of 140 ∘C the predominant phase is Cu12Sb4S13 while for 180 ∘C the predominant phase is Cu3SbS4. In order to ensure precursor composition homogeneity, the Cu-Sb metallic precursors are deposited simultaneously by RF magnetron sputtering using adjustable segmented targets. The morphological characterization of the films was made by scanning electron microscopy and the composition was analysed by energy dispersive spectroscopy. The structural analysis and phase identification were performed by X-ray diffraction and Raman scattering. The optical properties were studied on films deposited directly on bare glass and the optical bandgap energies of 1.47 eV and 0.89 eV for Cu12Sb4S13 and Cu3SbS4, respectively, were determined.ElsevierRepositório Científico do Instituto Politécnico do PortoFernandes, P. A.Shongalova, A.Cunha, A.F.Teixeira, J.P.Leitão, J.P.Cunha, J.M.V.Bose, S.Salomé, P.M.P.Correia, M.R.20192120-01-01T00:00:00Z2019-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10400.22/17154eng10.1016/j.jallcom.2019.05.149metadata only accessinfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-03-13T13:06:46Zoai:recipp.ipp.pt:10400.22/17154Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T17:36:50.442316Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Phase selective growth of Cu12Sb4S13 and Cu3SbS4 thin films by chalcogenization of simultaneous sputtered metal precursors |
title |
Phase selective growth of Cu12Sb4S13 and Cu3SbS4 thin films by chalcogenization of simultaneous sputtered metal precursors |
spellingShingle |
Phase selective growth of Cu12Sb4S13 and Cu3SbS4 thin films by chalcogenization of simultaneous sputtered metal precursors Fernandes, P. A. Sulfosalt Thin films RF magnetron sputtering Chalcogenization |
title_short |
Phase selective growth of Cu12Sb4S13 and Cu3SbS4 thin films by chalcogenization of simultaneous sputtered metal precursors |
title_full |
Phase selective growth of Cu12Sb4S13 and Cu3SbS4 thin films by chalcogenization of simultaneous sputtered metal precursors |
title_fullStr |
Phase selective growth of Cu12Sb4S13 and Cu3SbS4 thin films by chalcogenization of simultaneous sputtered metal precursors |
title_full_unstemmed |
Phase selective growth of Cu12Sb4S13 and Cu3SbS4 thin films by chalcogenization of simultaneous sputtered metal precursors |
title_sort |
Phase selective growth of Cu12Sb4S13 and Cu3SbS4 thin films by chalcogenization of simultaneous sputtered metal precursors |
author |
Fernandes, P. A. |
author_facet |
Fernandes, P. A. Shongalova, A. Cunha, A.F. Teixeira, J.P. Leitão, J.P. Cunha, J.M.V. Bose, S. Salomé, P.M.P. Correia, M.R. |
author_role |
author |
author2 |
Shongalova, A. Cunha, A.F. Teixeira, J.P. Leitão, J.P. Cunha, J.M.V. Bose, S. Salomé, P.M.P. Correia, M.R. |
author2_role |
author author author author author author author author |
dc.contributor.none.fl_str_mv |
Repositório Científico do Instituto Politécnico do Porto |
dc.contributor.author.fl_str_mv |
Fernandes, P. A. Shongalova, A. Cunha, A.F. Teixeira, J.P. Leitão, J.P. Cunha, J.M.V. Bose, S. Salomé, P.M.P. Correia, M.R. |
dc.subject.por.fl_str_mv |
Sulfosalt Thin films RF magnetron sputtering Chalcogenization |
topic |
Sulfosalt Thin films RF magnetron sputtering Chalcogenization |
description |
In this work, we present a procedure to grow Cu12Sb4S13 and Cu3SbS4 thin films consisting of the deposition of simultaneously sputtered metal precursors followed by a annealing treatment in a sulphur atmosphere. The selection of the ternary phase is performed by adjusting the sulphur evaporation temperature in the chalcogenization process. It is shown that for a sulphur evaporation temperature of 140 ∘C the predominant phase is Cu12Sb4S13 while for 180 ∘C the predominant phase is Cu3SbS4. In order to ensure precursor composition homogeneity, the Cu-Sb metallic precursors are deposited simultaneously by RF magnetron sputtering using adjustable segmented targets. The morphological characterization of the films was made by scanning electron microscopy and the composition was analysed by energy dispersive spectroscopy. The structural analysis and phase identification were performed by X-ray diffraction and Raman scattering. The optical properties were studied on films deposited directly on bare glass and the optical bandgap energies of 1.47 eV and 0.89 eV for Cu12Sb4S13 and Cu3SbS4, respectively, were determined. |
publishDate |
2019 |
dc.date.none.fl_str_mv |
2019 2019-01-01T00:00:00Z 2120-01-01T00:00:00Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10400.22/17154 |
url |
http://hdl.handle.net/10400.22/17154 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1016/j.jallcom.2019.05.149 |
dc.rights.driver.fl_str_mv |
metadata only access info:eu-repo/semantics/openAccess |
rights_invalid_str_mv |
metadata only access |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
Elsevier |
publisher.none.fl_str_mv |
Elsevier |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
instname_str |
Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
instacron_str |
RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
repository.mail.fl_str_mv |
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1799131458759032832 |