Evaluation of Piezoresistivity Properties of Sputtered ZnO Thin Films
Autor(a) principal: | |
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Data de Publicação: | 2014 |
Outros Autores: | , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNIFESP |
Texto Completo: | http://repositorio.unifesp.br/handle/11600/37700 http://dx.doi.org/10.1590/S1516-14392014005000080 |
Resumo: | Zinc oxide (ZnO) thin films were deposited by RF reactive magnetron sputtering on silicon (100) substrates under different experimental conditions. ZnO films were studied before and after annealing treatment at 600 degrees C. the crystallinity, electrical resistivity, stoichiometry, thickness, and elastic modulus of the films were investigated. ZnO piezoresistors were produced using microelectronics processes, such as photolithography, lift-off, and reactive ion etching (RIE). Cantilever method was used to determine the gauge factor, and measurements of Temperature Coefficient of Resistance (TCR) were performed on a hotplate. the optimization of the deposition conditions produced ZnO thin films with controlled stoichiometry (ZnO), crystalline microstructure (phase wurzite, 002), high elastic modulus (156 GPa), and low electrical resistivity (0.072 ohm.cm), which are good properties for application as piezoresistive pressure microsensor. in addition, the ZnO piezoresistors had a GF of 2.6 on the deformation in the plane (100) and TCR of -1610 ppm/K up to 250 degrees C. |
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Cardoso, Guilherme Wellington AlvesLeal, GabrielaSilva Sobrinho, Argemiro Soares daFraga, Mariana AmorimMassi, Marcos [UNIFESP]Inst Tecnol Aeronaut ITAFac Tecnol São Paulo FATEC SPUniversidade Federal de São Paulo (UNIFESP)2016-01-24T14:37:10Z2016-01-24T14:37:10Z2014-05-01Materials Research-ibero-american Journal of Materials. Sao Carlos: Univ Fed Sao Carlos, Dept Engenharia Materials, v. 17, n. 3, p. 588-592, 2014.1516-1439http://repositorio.unifesp.br/handle/11600/37700http://dx.doi.org/10.1590/S1516-14392014005000080S1516-1439201400500008010.1590/S1516-14392014005000080WOS:000338017600008Zinc oxide (ZnO) thin films were deposited by RF reactive magnetron sputtering on silicon (100) substrates under different experimental conditions. ZnO films were studied before and after annealing treatment at 600 degrees C. the crystallinity, electrical resistivity, stoichiometry, thickness, and elastic modulus of the films were investigated. ZnO piezoresistors were produced using microelectronics processes, such as photolithography, lift-off, and reactive ion etching (RIE). Cantilever method was used to determine the gauge factor, and measurements of Temperature Coefficient of Resistance (TCR) were performed on a hotplate. the optimization of the deposition conditions produced ZnO thin films with controlled stoichiometry (ZnO), crystalline microstructure (phase wurzite, 002), high elastic modulus (156 GPa), and low electrical resistivity (0.072 ohm.cm), which are good properties for application as piezoresistive pressure microsensor. in addition, the ZnO piezoresistors had a GF of 2.6 on the deformation in the plane (100) and TCR of -1610 ppm/K up to 250 degrees C.Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Inst Tecnol Aeronaut ITA, Sao Jose Dos Campos, SP, BrazilFac Tecnol São Paulo FATEC SP, São Paulo, BrazilUniversidade Federal de São Paulo UNIFESP, Sao Jose Dos Campos, SP, BrazilUniversidade Federal de São Paulo UNIFESP, Sao Jose Dos Campos, SP, BrazilWeb of Science588-592engUniv Fed Sao Carlos, Dept Engenharia MaterialsMaterials Research-ibero-american Journal of MaterialsZnOthin filmmagnetron sputteringpiezoresistivityEvaluation of Piezoresistivity Properties of Sputtered ZnO Thin Filmsinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleinfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UNIFESPinstname:Universidade Federal de São Paulo (UNIFESP)instacron:UNIFESP11600/377002023-02-14 13:42:50.371metadata only accessoai:repositorio.unifesp.br:11600/37700Repositório InstitucionalPUBhttp://www.repositorio.unifesp.br/oai/requestopendoar:34652023-05-25T12:29:57.731815Repositório Institucional da UNIFESP - Universidade Federal de São Paulo (UNIFESP)false |
dc.title.en.fl_str_mv |
Evaluation of Piezoresistivity Properties of Sputtered ZnO Thin Films |
title |
Evaluation of Piezoresistivity Properties of Sputtered ZnO Thin Films |
spellingShingle |
Evaluation of Piezoresistivity Properties of Sputtered ZnO Thin Films Cardoso, Guilherme Wellington Alves ZnO thin film magnetron sputtering piezoresistivity |
title_short |
Evaluation of Piezoresistivity Properties of Sputtered ZnO Thin Films |
title_full |
Evaluation of Piezoresistivity Properties of Sputtered ZnO Thin Films |
title_fullStr |
Evaluation of Piezoresistivity Properties of Sputtered ZnO Thin Films |
title_full_unstemmed |
Evaluation of Piezoresistivity Properties of Sputtered ZnO Thin Films |
title_sort |
Evaluation of Piezoresistivity Properties of Sputtered ZnO Thin Films |
author |
Cardoso, Guilherme Wellington Alves |
author_facet |
Cardoso, Guilherme Wellington Alves Leal, Gabriela Silva Sobrinho, Argemiro Soares da Fraga, Mariana Amorim Massi, Marcos [UNIFESP] |
author_role |
author |
author2 |
Leal, Gabriela Silva Sobrinho, Argemiro Soares da Fraga, Mariana Amorim Massi, Marcos [UNIFESP] |
author2_role |
author author author author |
dc.contributor.institution.none.fl_str_mv |
Inst Tecnol Aeronaut ITA Fac Tecnol São Paulo FATEC SP Universidade Federal de São Paulo (UNIFESP) |
dc.contributor.author.fl_str_mv |
Cardoso, Guilherme Wellington Alves Leal, Gabriela Silva Sobrinho, Argemiro Soares da Fraga, Mariana Amorim Massi, Marcos [UNIFESP] |
dc.subject.eng.fl_str_mv |
ZnO thin film magnetron sputtering piezoresistivity |
topic |
ZnO thin film magnetron sputtering piezoresistivity |
description |
Zinc oxide (ZnO) thin films were deposited by RF reactive magnetron sputtering on silicon (100) substrates under different experimental conditions. ZnO films were studied before and after annealing treatment at 600 degrees C. the crystallinity, electrical resistivity, stoichiometry, thickness, and elastic modulus of the films were investigated. ZnO piezoresistors were produced using microelectronics processes, such as photolithography, lift-off, and reactive ion etching (RIE). Cantilever method was used to determine the gauge factor, and measurements of Temperature Coefficient of Resistance (TCR) were performed on a hotplate. the optimization of the deposition conditions produced ZnO thin films with controlled stoichiometry (ZnO), crystalline microstructure (phase wurzite, 002), high elastic modulus (156 GPa), and low electrical resistivity (0.072 ohm.cm), which are good properties for application as piezoresistive pressure microsensor. in addition, the ZnO piezoresistors had a GF of 2.6 on the deformation in the plane (100) and TCR of -1610 ppm/K up to 250 degrees C. |
publishDate |
2014 |
dc.date.issued.fl_str_mv |
2014-05-01 |
dc.date.accessioned.fl_str_mv |
2016-01-24T14:37:10Z |
dc.date.available.fl_str_mv |
2016-01-24T14:37:10Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.citation.fl_str_mv |
Materials Research-ibero-american Journal of Materials. Sao Carlos: Univ Fed Sao Carlos, Dept Engenharia Materials, v. 17, n. 3, p. 588-592, 2014. |
dc.identifier.uri.fl_str_mv |
http://repositorio.unifesp.br/handle/11600/37700 http://dx.doi.org/10.1590/S1516-14392014005000080 |
dc.identifier.issn.none.fl_str_mv |
1516-1439 |
dc.identifier.scielo.none.fl_str_mv |
S1516-14392014005000080 |
dc.identifier.doi.none.fl_str_mv |
10.1590/S1516-14392014005000080 |
dc.identifier.wos.none.fl_str_mv |
WOS:000338017600008 |
identifier_str_mv |
Materials Research-ibero-american Journal of Materials. Sao Carlos: Univ Fed Sao Carlos, Dept Engenharia Materials, v. 17, n. 3, p. 588-592, 2014. 1516-1439 S1516-14392014005000080 10.1590/S1516-14392014005000080 WOS:000338017600008 |
url |
http://repositorio.unifesp.br/handle/11600/37700 http://dx.doi.org/10.1590/S1516-14392014005000080 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.ispartof.none.fl_str_mv |
Materials Research-ibero-american Journal of Materials |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
588-592 |
dc.publisher.none.fl_str_mv |
Univ Fed Sao Carlos, Dept Engenharia Materials |
publisher.none.fl_str_mv |
Univ Fed Sao Carlos, Dept Engenharia Materials |
dc.source.none.fl_str_mv |
reponame:Repositório Institucional da UNIFESP instname:Universidade Federal de São Paulo (UNIFESP) instacron:UNIFESP |
instname_str |
Universidade Federal de São Paulo (UNIFESP) |
instacron_str |
UNIFESP |
institution |
UNIFESP |
reponame_str |
Repositório Institucional da UNIFESP |
collection |
Repositório Institucional da UNIFESP |
repository.name.fl_str_mv |
Repositório Institucional da UNIFESP - Universidade Federal de São Paulo (UNIFESP) |
repository.mail.fl_str_mv |
|
_version_ |
1783460298990026752 |