ZrOxNy decorative thin films prepared by the reactive gas pulsing process
Autor(a) principal: | |
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Data de Publicação: | 2009 |
Outros Autores: | , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/1822/13693 |
Resumo: | Zirconium oxynitride thin films were deposited by dc reactive magnetron sputtering. A zirconium metallic target was sputtered in an Ar + N2 + O2 atmosphere. Argon and nitrogen flow rates were maintained constant whereas oxygen was pulsed during the deposition, implementing the reactive gas pulsing process (RGPP). A constant pulsing period T = 3 s was used following an exponential periodic signal versus time. The introduction time of oxygen was systematically changed from 17% to 83% of the period. The RGPP allowed the synthesis of ZrOxNy films with tuneable metalloid concentrations adjusting the introduction time of the oxygen. Composition and structural variations associated with mechanical, optical and electrical properties exhibited a smooth transition, from metallic-like characteristics, typical of the fcc-ZrN phase, to semi-conducting behaviour corresponding to a mixture of orthorhombic-Zr3N4(O) and γ -Zr2ON2 crystalline phases. |
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ZrOxNy decorative thin films prepared by the reactive gas pulsing processScience & TechnologyZirconium oxynitride thin films were deposited by dc reactive magnetron sputtering. A zirconium metallic target was sputtered in an Ar + N2 + O2 atmosphere. Argon and nitrogen flow rates were maintained constant whereas oxygen was pulsed during the deposition, implementing the reactive gas pulsing process (RGPP). A constant pulsing period T = 3 s was used following an exponential periodic signal versus time. The introduction time of oxygen was systematically changed from 17% to 83% of the period. The RGPP allowed the synthesis of ZrOxNy films with tuneable metalloid concentrations adjusting the introduction time of the oxygen. Composition and structural variations associated with mechanical, optical and electrical properties exhibited a smooth transition, from metallic-like characteristics, typical of the fcc-ZrN phase, to semi-conducting behaviour corresponding to a mixture of orthorhombic-Zr3N4(O) and γ -Zr2ON2 crystalline phases.Fundação para a Ciência e Tecnologia (FCT) - PTDC/CTM/69362/2006.IOP PublishingUniversidade do MinhoCarvalho, P.Cunha, L.Alves, E.Martin, N.Le Bourhis, E.Vaz, F.2009-09-182009-09-18T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/1822/13693eng0022-372710.1088/0022-3727/42/19/195501http://iopscience.iop.org/0022-3727/42/19/195501/info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-21T12:53:03Zoai:repositorium.sdum.uminho.pt:1822/13693Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T19:52:21.068806Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
ZrOxNy decorative thin films prepared by the reactive gas pulsing process |
title |
ZrOxNy decorative thin films prepared by the reactive gas pulsing process |
spellingShingle |
ZrOxNy decorative thin films prepared by the reactive gas pulsing process Carvalho, P. Science & Technology |
title_short |
ZrOxNy decorative thin films prepared by the reactive gas pulsing process |
title_full |
ZrOxNy decorative thin films prepared by the reactive gas pulsing process |
title_fullStr |
ZrOxNy decorative thin films prepared by the reactive gas pulsing process |
title_full_unstemmed |
ZrOxNy decorative thin films prepared by the reactive gas pulsing process |
title_sort |
ZrOxNy decorative thin films prepared by the reactive gas pulsing process |
author |
Carvalho, P. |
author_facet |
Carvalho, P. Cunha, L. Alves, E. Martin, N. Le Bourhis, E. Vaz, F. |
author_role |
author |
author2 |
Cunha, L. Alves, E. Martin, N. Le Bourhis, E. Vaz, F. |
author2_role |
author author author author author |
dc.contributor.none.fl_str_mv |
Universidade do Minho |
dc.contributor.author.fl_str_mv |
Carvalho, P. Cunha, L. Alves, E. Martin, N. Le Bourhis, E. Vaz, F. |
dc.subject.por.fl_str_mv |
Science & Technology |
topic |
Science & Technology |
description |
Zirconium oxynitride thin films were deposited by dc reactive magnetron sputtering. A zirconium metallic target was sputtered in an Ar + N2 + O2 atmosphere. Argon and nitrogen flow rates were maintained constant whereas oxygen was pulsed during the deposition, implementing the reactive gas pulsing process (RGPP). A constant pulsing period T = 3 s was used following an exponential periodic signal versus time. The introduction time of oxygen was systematically changed from 17% to 83% of the period. The RGPP allowed the synthesis of ZrOxNy films with tuneable metalloid concentrations adjusting the introduction time of the oxygen. Composition and structural variations associated with mechanical, optical and electrical properties exhibited a smooth transition, from metallic-like characteristics, typical of the fcc-ZrN phase, to semi-conducting behaviour corresponding to a mixture of orthorhombic-Zr3N4(O) and γ -Zr2ON2 crystalline phases. |
publishDate |
2009 |
dc.date.none.fl_str_mv |
2009-09-18 2009-09-18T00:00:00Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/1822/13693 |
url |
http://hdl.handle.net/1822/13693 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
0022-3727 10.1088/0022-3727/42/19/195501 http://iopscience.iop.org/0022-3727/42/19/195501/ |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
IOP Publishing |
publisher.none.fl_str_mv |
IOP Publishing |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
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Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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1799133115570978816 |