Photoluminescence and damage recovery studies in Fe-implanted ZnO single crystals
Autor(a) principal: | |
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Data de Publicação: | 2003 |
Outros Autores: | , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/10773/5668 |
Resumo: | We report Fe3+-related emission in ion-implanted ZnO single crystals. Iron ions were implanted at room temperature with 100 keV and a fluence of 1×1016 Fe+/cm2, and were submitted to annealing treatments in vacuum and in air. After implantation, the damage raises the minimum yield (χmin) from 2% to 50%. Annealing in an oxidizing atmosphere leads to a reduction of the implantation damage, which is fully recovered after annealing at 1050 °C with a χmin∼3% in the implanted region. With extrinsic excitation, red Fe-related emission is observed at low temperatures. The intensity is dependent on the annealing conditions. For samples annealed in air, the luminescence can be detected up to 120 K. When a comparison is made between unimplanted and post-implanted annealed samples, noticeable changes on near-band-edge and deep-level photoluminescence spectra are observed. A thermally populated structured green emission could be observed in the sample annealed in air, as shown by the temperature-dependent photoluminescence excitation studies. |
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Photoluminescence and damage recovery studies in Fe-implanted ZnO single crystalsWe report Fe3+-related emission in ion-implanted ZnO single crystals. Iron ions were implanted at room temperature with 100 keV and a fluence of 1×1016 Fe+/cm2, and were submitted to annealing treatments in vacuum and in air. After implantation, the damage raises the minimum yield (χmin) from 2% to 50%. Annealing in an oxidizing atmosphere leads to a reduction of the implantation damage, which is fully recovered after annealing at 1050 °C with a χmin∼3% in the implanted region. With extrinsic excitation, red Fe-related emission is observed at low temperatures. The intensity is dependent on the annealing conditions. For samples annealed in air, the luminescence can be detected up to 120 K. When a comparison is made between unimplanted and post-implanted annealed samples, noticeable changes on near-band-edge and deep-level photoluminescence spectra are observed. A thermally populated structured green emission could be observed in the sample annealed in air, as shown by the temperature-dependent photoluminescence excitation studies.American Institute of Physics2012-02-01T12:42:06Z2003-06-01T00:00:00Z2003-06info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10773/5668eng0021-8979Monteiro, T.Boemare, C.Soares, M.J.Rita, E.Alves, E.info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-02-22T11:08:05Zoai:ria.ua.pt:10773/5668Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T02:43:26.095240Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Photoluminescence and damage recovery studies in Fe-implanted ZnO single crystals |
title |
Photoluminescence and damage recovery studies in Fe-implanted ZnO single crystals |
spellingShingle |
Photoluminescence and damage recovery studies in Fe-implanted ZnO single crystals Monteiro, T. |
title_short |
Photoluminescence and damage recovery studies in Fe-implanted ZnO single crystals |
title_full |
Photoluminescence and damage recovery studies in Fe-implanted ZnO single crystals |
title_fullStr |
Photoluminescence and damage recovery studies in Fe-implanted ZnO single crystals |
title_full_unstemmed |
Photoluminescence and damage recovery studies in Fe-implanted ZnO single crystals |
title_sort |
Photoluminescence and damage recovery studies in Fe-implanted ZnO single crystals |
author |
Monteiro, T. |
author_facet |
Monteiro, T. Boemare, C. Soares, M.J. Rita, E. Alves, E. |
author_role |
author |
author2 |
Boemare, C. Soares, M.J. Rita, E. Alves, E. |
author2_role |
author author author author |
dc.contributor.author.fl_str_mv |
Monteiro, T. Boemare, C. Soares, M.J. Rita, E. Alves, E. |
description |
We report Fe3+-related emission in ion-implanted ZnO single crystals. Iron ions were implanted at room temperature with 100 keV and a fluence of 1×1016 Fe+/cm2, and were submitted to annealing treatments in vacuum and in air. After implantation, the damage raises the minimum yield (χmin) from 2% to 50%. Annealing in an oxidizing atmosphere leads to a reduction of the implantation damage, which is fully recovered after annealing at 1050 °C with a χmin∼3% in the implanted region. With extrinsic excitation, red Fe-related emission is observed at low temperatures. The intensity is dependent on the annealing conditions. For samples annealed in air, the luminescence can be detected up to 120 K. When a comparison is made between unimplanted and post-implanted annealed samples, noticeable changes on near-band-edge and deep-level photoluminescence spectra are observed. A thermally populated structured green emission could be observed in the sample annealed in air, as shown by the temperature-dependent photoluminescence excitation studies. |
publishDate |
2003 |
dc.date.none.fl_str_mv |
2003-06-01T00:00:00Z 2003-06 2012-02-01T12:42:06Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10773/5668 |
url |
http://hdl.handle.net/10773/5668 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
0021-8979 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
American Institute of Physics |
publisher.none.fl_str_mv |
American Institute of Physics |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
instname_str |
Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
instacron_str |
RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
repository.mail.fl_str_mv |
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