Structural and photoluminescence studies of erbium implanted nanocrystalline silicon thin films
Autor(a) principal: | |
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Data de Publicação: | 2009 |
Outros Autores: | , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/1822/13767 |
Resumo: | Hydrogenated amorphous and nanocrystalline silicon thin films deposited by Hot Wire (HW) and Radio-Frequency Plasma-Enhanced (RF) Chemical Vapor Deposition were Er-bium-implanted. Their pre-implantation structural properties and post-implantation optical properties were studied and cor-related. After one-hour annealing at 150ºC in nitrogen atmos-phere only amorphous films showed photoluminescence (PL) activity at 1.54 μm, measured at 5 K. After further annealing at 300oC for one hour, all the samples exhibited a sharp PL peak positioned at 1.54 m, with a FWHM of ~5 nm. Amorphous films deposited by HW originated a stronger PL peak than corresponding films deposited by RF, while in na-nocrystalline films PL emission was much stronger in sam-ples deposited by RF than by HW. There was no noticeable difference in Er3+ PL activity be-tween films implanted with 1x1014 atoms/cm2 and 5x1015 at-oms/cm2 Er doses. |
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Structural and photoluminescence studies of erbium implanted nanocrystalline silicon thin filmsNanocrystalline silicon thin filmsRFCVDHWCVDStructural propertiesEr emissionScience & TechnologyHydrogenated amorphous and nanocrystalline silicon thin films deposited by Hot Wire (HW) and Radio-Frequency Plasma-Enhanced (RF) Chemical Vapor Deposition were Er-bium-implanted. Their pre-implantation structural properties and post-implantation optical properties were studied and cor-related. After one-hour annealing at 150ºC in nitrogen atmos-phere only amorphous films showed photoluminescence (PL) activity at 1.54 μm, measured at 5 K. After further annealing at 300oC for one hour, all the samples exhibited a sharp PL peak positioned at 1.54 m, with a FWHM of ~5 nm. Amorphous films deposited by HW originated a stronger PL peak than corresponding films deposited by RF, while in na-nocrystalline films PL emission was much stronger in sam-ples deposited by RF than by HW. There was no noticeable difference in Er3+ PL activity be-tween films implanted with 1x1014 atoms/cm2 and 5x1015 at-oms/cm2 Er doses.FCT for a post-doctorate grant (SFRH/BPD/14919/2004)Wiley-VCH VerlagUniversidade do MinhoCerqueira, M. F.Alpuim, P.Filonovich, SergejAlves, E.Rolo, Anabela G.Andrês, G.Soares, J.Kozanecki, A.20092009-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/1822/13767eng1862-630010.1002/pssa.200881785http://onlinelibrary.wiley.com/doi/10.1002/pssa.200881785/pdfinfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-21T12:42:22ZPortal AgregadorONG |
dc.title.none.fl_str_mv |
Structural and photoluminescence studies of erbium implanted nanocrystalline silicon thin films |
title |
Structural and photoluminescence studies of erbium implanted nanocrystalline silicon thin films |
spellingShingle |
Structural and photoluminescence studies of erbium implanted nanocrystalline silicon thin films Cerqueira, M. F. Nanocrystalline silicon thin films RFCVD HWCVD Structural properties Er emission Science & Technology |
title_short |
Structural and photoluminescence studies of erbium implanted nanocrystalline silicon thin films |
title_full |
Structural and photoluminescence studies of erbium implanted nanocrystalline silicon thin films |
title_fullStr |
Structural and photoluminescence studies of erbium implanted nanocrystalline silicon thin films |
title_full_unstemmed |
Structural and photoluminescence studies of erbium implanted nanocrystalline silicon thin films |
title_sort |
Structural and photoluminescence studies of erbium implanted nanocrystalline silicon thin films |
author |
Cerqueira, M. F. |
author_facet |
Cerqueira, M. F. Alpuim, P. Filonovich, Sergej Alves, E. Rolo, Anabela G. Andrês, G. Soares, J. Kozanecki, A. |
author_role |
author |
author2 |
Alpuim, P. Filonovich, Sergej Alves, E. Rolo, Anabela G. Andrês, G. Soares, J. Kozanecki, A. |
author2_role |
author author author author author author author |
dc.contributor.none.fl_str_mv |
Universidade do Minho |
dc.contributor.author.fl_str_mv |
Cerqueira, M. F. Alpuim, P. Filonovich, Sergej Alves, E. Rolo, Anabela G. Andrês, G. Soares, J. Kozanecki, A. |
dc.subject.por.fl_str_mv |
Nanocrystalline silicon thin films RFCVD HWCVD Structural properties Er emission Science & Technology |
topic |
Nanocrystalline silicon thin films RFCVD HWCVD Structural properties Er emission Science & Technology |
description |
Hydrogenated amorphous and nanocrystalline silicon thin films deposited by Hot Wire (HW) and Radio-Frequency Plasma-Enhanced (RF) Chemical Vapor Deposition were Er-bium-implanted. Their pre-implantation structural properties and post-implantation optical properties were studied and cor-related. After one-hour annealing at 150ºC in nitrogen atmos-phere only amorphous films showed photoluminescence (PL) activity at 1.54 μm, measured at 5 K. After further annealing at 300oC for one hour, all the samples exhibited a sharp PL peak positioned at 1.54 m, with a FWHM of ~5 nm. Amorphous films deposited by HW originated a stronger PL peak than corresponding films deposited by RF, while in na-nocrystalline films PL emission was much stronger in sam-ples deposited by RF than by HW. There was no noticeable difference in Er3+ PL activity be-tween films implanted with 1x1014 atoms/cm2 and 5x1015 at-oms/cm2 Er doses. |
publishDate |
2009 |
dc.date.none.fl_str_mv |
2009 2009-01-01T00:00:00Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/1822/13767 |
url |
http://hdl.handle.net/1822/13767 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
1862-6300 10.1002/pssa.200881785 http://onlinelibrary.wiley.com/doi/10.1002/pssa.200881785/pdf |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
Wiley-VCH Verlag |
publisher.none.fl_str_mv |
Wiley-VCH Verlag |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
instname_str |
Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
instacron_str |
RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
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_version_ |
1777303823217328128 |