Effect of grain size and hydrogen passivation on the electrical properties of nanocrystalline silicon films

Detalhes bibliográficos
Autor(a) principal: Cerqueira, M. F.
Data de Publicação: 2010
Outros Autores: Semikina, T. V., Baidus, N. V., Alves, E.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/1822/13751
Resumo: The properties of mixed-phase (nanocrystalline/amorphous) silicon layers produced by reactive RF-sputtering are described. The chemical composition and nanostructure [i.e. nanocrystal (NC) size and volume fraction] of the films were studied by Rutherford backscattering spectroscopy (RBS) and micro-Raman spectroscopy, respectively. Samples with different fractions of the nanocrystalline phase and NC mean size were produced by changing the deposition parameters, without post-growth annealing. The electrical conductivity of the films, measured as function of temperature, is discussed in relation to their nanostructure
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spelling Effect of grain size and hydrogen passivation on the electrical properties of nanocrystalline silicon filmsAmorphous siliconNanocrystalRaman spectroscopyElectrical propertiesScience & TechnologyThe properties of mixed-phase (nanocrystalline/amorphous) silicon layers produced by reactive RF-sputtering are described. The chemical composition and nanostructure [i.e. nanocrystal (NC) size and volume fraction] of the films were studied by Rutherford backscattering spectroscopy (RBS) and micro-Raman spectroscopy, respectively. Samples with different fractions of the nanocrystalline phase and NC mean size were produced by changing the deposition parameters, without post-growth annealing. The electrical conductivity of the films, measured as function of temperature, is discussed in relation to their nanostructureFCT Project POCTI/CTM/39395/2001InderscienceUniversidade do MinhoCerqueira, M. F.Semikina, T. V.Baidus, N. V.Alves, E.20102010-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/1822/13751eng0268-190010.1504/IJMPT.2010.034271http://www.inderscience.com/search/index.php?action=record&rec_id=34271info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-21T12:43:27ZPortal AgregadorONG
dc.title.none.fl_str_mv Effect of grain size and hydrogen passivation on the electrical properties of nanocrystalline silicon films
title Effect of grain size and hydrogen passivation on the electrical properties of nanocrystalline silicon films
spellingShingle Effect of grain size and hydrogen passivation on the electrical properties of nanocrystalline silicon films
Cerqueira, M. F.
Amorphous silicon
Nanocrystal
Raman spectroscopy
Electrical properties
Science & Technology
title_short Effect of grain size and hydrogen passivation on the electrical properties of nanocrystalline silicon films
title_full Effect of grain size and hydrogen passivation on the electrical properties of nanocrystalline silicon films
title_fullStr Effect of grain size and hydrogen passivation on the electrical properties of nanocrystalline silicon films
title_full_unstemmed Effect of grain size and hydrogen passivation on the electrical properties of nanocrystalline silicon films
title_sort Effect of grain size and hydrogen passivation on the electrical properties of nanocrystalline silicon films
author Cerqueira, M. F.
author_facet Cerqueira, M. F.
Semikina, T. V.
Baidus, N. V.
Alves, E.
author_role author
author2 Semikina, T. V.
Baidus, N. V.
Alves, E.
author2_role author
author
author
dc.contributor.none.fl_str_mv Universidade do Minho
dc.contributor.author.fl_str_mv Cerqueira, M. F.
Semikina, T. V.
Baidus, N. V.
Alves, E.
dc.subject.por.fl_str_mv Amorphous silicon
Nanocrystal
Raman spectroscopy
Electrical properties
Science & Technology
topic Amorphous silicon
Nanocrystal
Raman spectroscopy
Electrical properties
Science & Technology
description The properties of mixed-phase (nanocrystalline/amorphous) silicon layers produced by reactive RF-sputtering are described. The chemical composition and nanostructure [i.e. nanocrystal (NC) size and volume fraction] of the films were studied by Rutherford backscattering spectroscopy (RBS) and micro-Raman spectroscopy, respectively. Samples with different fractions of the nanocrystalline phase and NC mean size were produced by changing the deposition parameters, without post-growth annealing. The electrical conductivity of the films, measured as function of temperature, is discussed in relation to their nanostructure
publishDate 2010
dc.date.none.fl_str_mv 2010
2010-01-01T00:00:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/1822/13751
url http://hdl.handle.net/1822/13751
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 0268-1900
10.1504/IJMPT.2010.034271
http://www.inderscience.com/search/index.php?action=record&rec_id=34271
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Inderscience
publisher.none.fl_str_mv Inderscience
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
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instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
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