Study of the oxygen role in the photoluminescence of erbium doped nanocrystalline silicon embedded in a silicon amorphous matrix

Detalhes bibliográficos
Autor(a) principal: Cerqueira, M. F.
Data de Publicação: 2006
Outros Autores: Losurdo, M., Monteiro, T., Stepikhova, M., Soares, M. J., Peres, M., Alves, E., Conde, O.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/1822/13956
Resumo: We have produced and studied erbium doped nanocrystalline silicon thin films with different oxygen and hydrogen content in order to evaluate the influence of the matrix on the Er3+ emission and on the 0.89 eV and 1.17 eV bands. Films were grown by reactive magnetron sputtering on glass substrates under several different conditions (RF power, Er content and gas mixture composition) in order to obtain different microstructures. The structural parameters and the chemical composition of the samples were obtained by X-ray in the grazing incidence geometry, Raman spectroscopy and Rutherford back scattering analysis. Using X-ray technique combined with Raman spectroscopy information on the crystalline fraction and the average crystallite size of Si nanocrystals was obtained. Dependence of the 0.89 eV and 1.17 eV peaks in Si heterogeneous matrixes on the films crystallinity and O/H ratio has been analyzed
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spelling Study of the oxygen role in the photoluminescence of erbium doped nanocrystalline silicon embedded in a silicon amorphous matrixNanocrystalline siliconErbium dopingThin filmsOptical propertiessiliconRaman scatteringsputteringdefectsmicrocrystallinitynanocrystalsluminescenceScience & TechnologyWe have produced and studied erbium doped nanocrystalline silicon thin films with different oxygen and hydrogen content in order to evaluate the influence of the matrix on the Er3+ emission and on the 0.89 eV and 1.17 eV bands. Films were grown by reactive magnetron sputtering on glass substrates under several different conditions (RF power, Er content and gas mixture composition) in order to obtain different microstructures. The structural parameters and the chemical composition of the samples were obtained by X-ray in the grazing incidence geometry, Raman spectroscopy and Rutherford back scattering analysis. Using X-ray technique combined with Raman spectroscopy information on the crystalline fraction and the average crystallite size of Si nanocrystals was obtained. Dependence of the 0.89 eV and 1.17 eV peaks in Si heterogeneous matrixes on the films crystallinity and O/H ratio has been analyzedINTAS Project #03-51-6486FCT Project POCTI/CTM/39395/2001ElsevierUniversidade do MinhoCerqueira, M. F.Losurdo, M.Monteiro, T.Stepikhova, M.Soares, M. J.Peres, M.Alves, E.Conde, O.20062006-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/1822/13956eng0022-309310.1016/j.jnoncrysol.2005.09.045http://www.sciencedirect.com/science/article/pii/S0022309306002067info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-21T12:44:57ZPortal AgregadorONG
dc.title.none.fl_str_mv Study of the oxygen role in the photoluminescence of erbium doped nanocrystalline silicon embedded in a silicon amorphous matrix
title Study of the oxygen role in the photoluminescence of erbium doped nanocrystalline silicon embedded in a silicon amorphous matrix
spellingShingle Study of the oxygen role in the photoluminescence of erbium doped nanocrystalline silicon embedded in a silicon amorphous matrix
Cerqueira, M. F.
Nanocrystalline silicon
Erbium doping
Thin films
Optical properties
silicon
Raman scattering
sputtering
defects
microcrystallinity
nanocrystals
luminescence
Science & Technology
title_short Study of the oxygen role in the photoluminescence of erbium doped nanocrystalline silicon embedded in a silicon amorphous matrix
title_full Study of the oxygen role in the photoluminescence of erbium doped nanocrystalline silicon embedded in a silicon amorphous matrix
title_fullStr Study of the oxygen role in the photoluminescence of erbium doped nanocrystalline silicon embedded in a silicon amorphous matrix
title_full_unstemmed Study of the oxygen role in the photoluminescence of erbium doped nanocrystalline silicon embedded in a silicon amorphous matrix
title_sort Study of the oxygen role in the photoluminescence of erbium doped nanocrystalline silicon embedded in a silicon amorphous matrix
author Cerqueira, M. F.
author_facet Cerqueira, M. F.
Losurdo, M.
Monteiro, T.
Stepikhova, M.
Soares, M. J.
Peres, M.
Alves, E.
Conde, O.
author_role author
author2 Losurdo, M.
Monteiro, T.
Stepikhova, M.
Soares, M. J.
Peres, M.
Alves, E.
Conde, O.
author2_role author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade do Minho
dc.contributor.author.fl_str_mv Cerqueira, M. F.
Losurdo, M.
Monteiro, T.
Stepikhova, M.
Soares, M. J.
Peres, M.
Alves, E.
Conde, O.
dc.subject.por.fl_str_mv Nanocrystalline silicon
Erbium doping
Thin films
Optical properties
silicon
Raman scattering
sputtering
defects
microcrystallinity
nanocrystals
luminescence
Science & Technology
topic Nanocrystalline silicon
Erbium doping
Thin films
Optical properties
silicon
Raman scattering
sputtering
defects
microcrystallinity
nanocrystals
luminescence
Science & Technology
description We have produced and studied erbium doped nanocrystalline silicon thin films with different oxygen and hydrogen content in order to evaluate the influence of the matrix on the Er3+ emission and on the 0.89 eV and 1.17 eV bands. Films were grown by reactive magnetron sputtering on glass substrates under several different conditions (RF power, Er content and gas mixture composition) in order to obtain different microstructures. The structural parameters and the chemical composition of the samples were obtained by X-ray in the grazing incidence geometry, Raman spectroscopy and Rutherford back scattering analysis. Using X-ray technique combined with Raman spectroscopy information on the crystalline fraction and the average crystallite size of Si nanocrystals was obtained. Dependence of the 0.89 eV and 1.17 eV peaks in Si heterogeneous matrixes on the films crystallinity and O/H ratio has been analyzed
publishDate 2006
dc.date.none.fl_str_mv 2006
2006-01-01T00:00:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/1822/13956
url http://hdl.handle.net/1822/13956
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 0022-3093
10.1016/j.jnoncrysol.2005.09.045
http://www.sciencedirect.com/science/article/pii/S0022309306002067
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
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instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
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reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
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