Hydrogen trapping in oxigen-deficient hafnium silicates

• Autor(a) principal: Fonseca, Leonardo R. C.
• Data de Publicação: 2007
• Outros Autores: Xavier Jr., A. L., Ribeiro Jr., Marcelo, Driemeier, Carlos Eduardo, Baumvol, Israel Jacob Rabin
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UFRGS
• Texto Completo: http://hdl.handle.net/10183/96102
• topic: Silicatos; Háfnio; Mosfet; Atrapamento; Hidrogênio; Oxigênio

Isotopic substitution, nuclear reaction analysis, and x-ray photoelectron spectroscopy were employed to show that oxygen-deficient hafnium (Hf) silicates trap hydrogen atoms. Based on this experimental observation, we used first-principles calculations to investigate the structure, energetics, and electronic properties of H interacting with O vacancies in a hafnium silicate model. We found that O vacancies close to a Si atom are energetically favored when compared to vacancies in HfO2-like regions, implying that close-to-Si O vacancies are more likely to occur. Trapping of two H atoms at a close-to-Si O vacancy passivates the vacancy-induced gap states. The first H interacts with neighboring Hf atoms, whereas the second H binds to the Si atom.