Atomic transport and chemical stability during annealing of ultrathin Al/sub 2/O/sub 3/ films on Si

Bibliographic Details
Main Author: Krug, Cristiano
Publication Date: 2000
Other Authors: Rosa, Elisa Brod Oliveira da, Almeida, Rita Maria Cunha de, Morais, Jonder, Baumvol, Israel Jacob Rabin, Salgado, Tania Denise Miskinis, Stedile, Fernanda Chiarello
Format: Article
Language: eng
Source: Repositório Institucional da UFRGS
Download full: http://hdl.handle.net/10183/100092
Summary: Ultrathin films of Al₂O₃ deposited on Si were submitted to rapid thermal annealing in vacuum or in oxygen atmosphere, in the temperature range from 600 to 800 °C. Nuclear reaction profiling with subnanometric depth resolution evidenced mobility of O, Al, and Si species, and angle-resolved x-ray photoelectron spectroscopy revealed the formation of Si-Al-O compounds in near-surface regions, under oxidizing atmosphere at and above 700 °C. Under vacuum annealing all species remained essentially immobile. A model is presented based on diffusion-reaction equations capable of explaining the mobilities and reproducing the obtained profiles.
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spelling Krug, CristianoRosa, Elisa Brod Oliveira daAlmeida, Rita Maria Cunha deMorais, JonderBaumvol, Israel Jacob RabinSalgado, Tania Denise MiskinisStedile, Fernanda Chiarello2014-08-12T02:10:22Z20000031-9007http://hdl.handle.net/10183/100092000279172Ultrathin films of Al₂O₃ deposited on Si were submitted to rapid thermal annealing in vacuum or in oxygen atmosphere, in the temperature range from 600 to 800 °C. Nuclear reaction profiling with subnanometric depth resolution evidenced mobility of O, Al, and Si species, and angle-resolved x-ray photoelectron spectroscopy revealed the formation of Si-Al-O compounds in near-surface regions, under oxidizing atmosphere at and above 700 °C. Under vacuum annealing all species remained essentially immobile. A model is presented based on diffusion-reaction equations capable of explaining the mobilities and reproducing the obtained profiles.application/pdfengPhysical review letters. Melville. Vol. 85, no. 19 (Nov. 2000), p. 4120-4123FísicaFilmes finosSilícioTratamento térmicoAtomic transport and chemical stability during annealing of ultrathin Al/sub 2/O/sub 3/ films on SiEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000279172.pdf000279172.pdfTexto completo (inglês)application/pdf139672http://www.lume.ufrgs.br/bitstream/10183/100092/1/000279172.pdf94d0529ae9b77aa36eec7aba0dd58e8fMD51TEXT000279172.pdf.txt000279172.pdf.txtExtracted Texttext/plain17759http://www.lume.ufrgs.br/bitstream/10183/100092/2/000279172.pdf.txt66978d8b388440054e76d68db4c66431MD52THUMBNAIL000279172.pdf.jpg000279172.pdf.jpgGenerated Thumbnailimage/jpeg2179http://www.lume.ufrgs.br/bitstream/10183/100092/3/000279172.pdf.jpgef71184a6d372757e5d00f3525bdbe6cMD5310183/1000922024-03-29 06:18:55.015914oai:www.lume.ufrgs.br:10183/100092Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2024-03-29T09:18:55Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Atomic transport and chemical stability during annealing of ultrathin Al/sub 2/O/sub 3/ films on Si
title Atomic transport and chemical stability during annealing of ultrathin Al/sub 2/O/sub 3/ films on Si
spellingShingle Atomic transport and chemical stability during annealing of ultrathin Al/sub 2/O/sub 3/ films on Si
Krug, Cristiano
Física
Filmes finos
Silício
Tratamento térmico
title_short Atomic transport and chemical stability during annealing of ultrathin Al/sub 2/O/sub 3/ films on Si
title_full Atomic transport and chemical stability during annealing of ultrathin Al/sub 2/O/sub 3/ films on Si
title_fullStr Atomic transport and chemical stability during annealing of ultrathin Al/sub 2/O/sub 3/ films on Si
title_full_unstemmed Atomic transport and chemical stability during annealing of ultrathin Al/sub 2/O/sub 3/ films on Si
title_sort Atomic transport and chemical stability during annealing of ultrathin Al/sub 2/O/sub 3/ films on Si
author Krug, Cristiano
author_facet Krug, Cristiano
Rosa, Elisa Brod Oliveira da
Almeida, Rita Maria Cunha de
Morais, Jonder
Baumvol, Israel Jacob Rabin
Salgado, Tania Denise Miskinis
Stedile, Fernanda Chiarello
author_role author
author2 Rosa, Elisa Brod Oliveira da
Almeida, Rita Maria Cunha de
Morais, Jonder
Baumvol, Israel Jacob Rabin
Salgado, Tania Denise Miskinis
Stedile, Fernanda Chiarello
author2_role author
author
author
author
author
author
dc.contributor.author.fl_str_mv Krug, Cristiano
Rosa, Elisa Brod Oliveira da
Almeida, Rita Maria Cunha de
Morais, Jonder
Baumvol, Israel Jacob Rabin
Salgado, Tania Denise Miskinis
Stedile, Fernanda Chiarello
dc.subject.por.fl_str_mv Física
Filmes finos
Silício
Tratamento térmico
topic Física
Filmes finos
Silício
Tratamento térmico
description Ultrathin films of Al₂O₃ deposited on Si were submitted to rapid thermal annealing in vacuum or in oxygen atmosphere, in the temperature range from 600 to 800 °C. Nuclear reaction profiling with subnanometric depth resolution evidenced mobility of O, Al, and Si species, and angle-resolved x-ray photoelectron spectroscopy revealed the formation of Si-Al-O compounds in near-surface regions, under oxidizing atmosphere at and above 700 °C. Under vacuum annealing all species remained essentially immobile. A model is presented based on diffusion-reaction equations capable of explaining the mobilities and reproducing the obtained profiles.
publishDate 2000
dc.date.issued.fl_str_mv 2000
dc.date.accessioned.fl_str_mv 2014-08-12T02:10:22Z
dc.type.driver.fl_str_mv Estrangeiro
info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/100092
dc.identifier.issn.pt_BR.fl_str_mv 0031-9007
dc.identifier.nrb.pt_BR.fl_str_mv 000279172
identifier_str_mv 0031-9007
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url http://hdl.handle.net/10183/100092
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Physical review letters. Melville. Vol. 85, no. 19 (Nov. 2000), p. 4120-4123
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
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reponame_str Repositório Institucional da UFRGS
collection Repositório Institucional da UFRGS
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