Sb doping effects and oxygen adsorption in SnO2 thin films deposited via sol-gel
Autor(a) principal: | |
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Data de Publicação: | 2003 |
Outros Autores: | , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1590/S1516-14392003000400004 http://hdl.handle.net/11449/212954 |
Resumo: | Transparent electrically conducting antimony-doped SnO2 thin films have been prepared by sol-gel dip-coating process from colloidal aqueous suspension. The effect of doping content on the structural, optical and electrical properties is analyzed. Results from infrared optical transmission and reflection have shown that the higher the Sb concentration the lower the transmission intensity and the higher the reflection signal. Absorption intensity increases as well. Results of X-ray reflectometry and electron microscopy have shown that the density of films fired at 400 °C after each dip is higher than that of multi-dipped films prepared with a single annealing. Both the electrical characteristics in the dark and the increase in conductivity as function of illumination through different filters, at 190 K, evidence that the transport properties of these films are dominated by the presence of defects, including the trapping at grain boundary due to excess of oxygen. |
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Repositório Institucional da UNESP |
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Sb doping effects and oxygen adsorption in SnO2 thin films deposited via sol-geltin dioxidenanostructuressol-geloptical propertiesTransparent electrically conducting antimony-doped SnO2 thin films have been prepared by sol-gel dip-coating process from colloidal aqueous suspension. The effect of doping content on the structural, optical and electrical properties is analyzed. Results from infrared optical transmission and reflection have shown that the higher the Sb concentration the lower the transmission intensity and the higher the reflection signal. Absorption intensity increases as well. Results of X-ray reflectometry and electron microscopy have shown that the density of films fired at 400 °C after each dip is higher than that of multi-dipped films prepared with a single annealing. Both the electrical characteristics in the dark and the increase in conductivity as function of illumination through different filters, at 190 K, evidence that the transport properties of these films are dominated by the presence of defects, including the trapping at grain boundary due to excess of oxygen.Universidade de São Paulo, Instituto de Física de São CarlosUniversidade Estadual Paulista, Instituto de Química de AraraquaraUniversidade Estadual Paulista, FCUniversidade Estadual Paulista, Instituto de Química de AraraquaraUniversidade Estadual Paulista, FCABM, ABC, ABPolUniversidade de São Paulo (USP)Universidade Estadual Paulista (Unesp)Geraldo, VivianyScalvi, Luis Vicente De Andrade [UNESP]Morais, Evandro Augusto DeSantilli, Celso Valentim [UNESP]Pulcinelli, Sandra Helena [UNESP]2021-07-14T10:47:43Z2021-07-14T10:47:43Z2003-12info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article451-456application/pdfhttp://dx.doi.org/10.1590/S1516-14392003000400004Materials Research. São Carlos, SP, Brazil: ABM, ABC, ABPol, v. 6, n. 4, p. 451-456, 2003.1516-14391980-5373http://hdl.handle.net/11449/21295410.1590/S1516-14392003000400004S1516-14392003000400004S1516-14392003000400004.pdfSciELOreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengMaterials Researchinfo:eu-repo/semantics/openAccess2023-10-25T06:05:30Zoai:repositorio.unesp.br:11449/212954Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462023-10-25T06:05:30Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Sb doping effects and oxygen adsorption in SnO2 thin films deposited via sol-gel |
title |
Sb doping effects and oxygen adsorption in SnO2 thin films deposited via sol-gel |
spellingShingle |
Sb doping effects and oxygen adsorption in SnO2 thin films deposited via sol-gel Geraldo, Viviany tin dioxide nanostructures sol-gel optical properties |
title_short |
Sb doping effects and oxygen adsorption in SnO2 thin films deposited via sol-gel |
title_full |
Sb doping effects and oxygen adsorption in SnO2 thin films deposited via sol-gel |
title_fullStr |
Sb doping effects and oxygen adsorption in SnO2 thin films deposited via sol-gel |
title_full_unstemmed |
Sb doping effects and oxygen adsorption in SnO2 thin films deposited via sol-gel |
title_sort |
Sb doping effects and oxygen adsorption in SnO2 thin films deposited via sol-gel |
author |
Geraldo, Viviany |
author_facet |
Geraldo, Viviany Scalvi, Luis Vicente De Andrade [UNESP] Morais, Evandro Augusto De Santilli, Celso Valentim [UNESP] Pulcinelli, Sandra Helena [UNESP] |
author_role |
author |
author2 |
Scalvi, Luis Vicente De Andrade [UNESP] Morais, Evandro Augusto De Santilli, Celso Valentim [UNESP] Pulcinelli, Sandra Helena [UNESP] |
author2_role |
author author author author |
dc.contributor.none.fl_str_mv |
Universidade de São Paulo (USP) Universidade Estadual Paulista (Unesp) |
dc.contributor.author.fl_str_mv |
Geraldo, Viviany Scalvi, Luis Vicente De Andrade [UNESP] Morais, Evandro Augusto De Santilli, Celso Valentim [UNESP] Pulcinelli, Sandra Helena [UNESP] |
dc.subject.por.fl_str_mv |
tin dioxide nanostructures sol-gel optical properties |
topic |
tin dioxide nanostructures sol-gel optical properties |
description |
Transparent electrically conducting antimony-doped SnO2 thin films have been prepared by sol-gel dip-coating process from colloidal aqueous suspension. The effect of doping content on the structural, optical and electrical properties is analyzed. Results from infrared optical transmission and reflection have shown that the higher the Sb concentration the lower the transmission intensity and the higher the reflection signal. Absorption intensity increases as well. Results of X-ray reflectometry and electron microscopy have shown that the density of films fired at 400 °C after each dip is higher than that of multi-dipped films prepared with a single annealing. Both the electrical characteristics in the dark and the increase in conductivity as function of illumination through different filters, at 190 K, evidence that the transport properties of these films are dominated by the presence of defects, including the trapping at grain boundary due to excess of oxygen. |
publishDate |
2003 |
dc.date.none.fl_str_mv |
2003-12 2021-07-14T10:47:43Z 2021-07-14T10:47:43Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1590/S1516-14392003000400004 Materials Research. São Carlos, SP, Brazil: ABM, ABC, ABPol, v. 6, n. 4, p. 451-456, 2003. 1516-1439 1980-5373 http://hdl.handle.net/11449/212954 10.1590/S1516-14392003000400004 S1516-14392003000400004 S1516-14392003000400004.pdf |
url |
http://dx.doi.org/10.1590/S1516-14392003000400004 http://hdl.handle.net/11449/212954 |
identifier_str_mv |
Materials Research. São Carlos, SP, Brazil: ABM, ABC, ABPol, v. 6, n. 4, p. 451-456, 2003. 1516-1439 1980-5373 10.1590/S1516-14392003000400004 S1516-14392003000400004 S1516-14392003000400004.pdf |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Materials Research |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
451-456 application/pdf |
dc.publisher.none.fl_str_mv |
ABM, ABC, ABPol |
publisher.none.fl_str_mv |
ABM, ABC, ABPol |
dc.source.none.fl_str_mv |
SciELO reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1792961640594931712 |