Análise da Resistência Série Fonte-Dreno de Transistores HEMTs (“High Electron Mobility Transistor”)

• Autor(a) principal: Sanchez, Gabriel Vieira
• Data de Publicação: 2021
• Tipo de documento: Trabalho de conclusão de curso
• Idioma: por
• Título da fonte: Repositório Institucional da UNESP
• Texto Completo: http://hdl.handle.net/11449/215818
• topic: Microelectronic; Transistors; Microeletrônica; Transistores

This work has as objective the study of High Electron Mobility Transistors' Source-Drain Series Resistance (RSD) with twelve different configurations of Channel Length and Channel Width for four Dies (blades) operating at Linear and Saturation regions. To do so, a previous analysis was made on equal devices in order to check if there was any irregularity with them that could impact on the results (such as burned device). Then, the Drain Current (ID) versus Gate Voltage (VG) graphs were plotted and the Transconductance (gm) was obtained. With ORTIZ-CONDE's method, the Threshold Voltages (VT) were determined. With these values and using Ohm's Laws, the Total Resistance of these devices were obtained, being composed, basically, by the Channel's Resistance and SourceDrain Series Resistance. Tending Channel's Length to zero (using Linear Fit) is possible to propose an approximation that the Total Resistance is equal to SourceDrain Series Resistance of HEMT. That said, the focus was on analyzing the impacts of parameters' changes of HEMTs (Channel's Length and Width) of different blades on Source-Drain Series Resistance. Finally, some improvements were proposed to be executed in further studies.